Molecular beam epitaxial growth of ZnSe, ZnSSe and ZnMnSSe layers on GaAs substrates for blue-green laser structures

Y. P. Chen, M. Saginur, C. C. Kim, S. Sivananthan, David Smith, S. C Y Tsen

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Single layers of ZnSe, ZnS xSe 1-x and Zn 1-yMn yS xSe 1-x were grown on the GaAs(001). Real-time reflection high energy electron diffraction was used to study the initial growth of ZnSe(001) on GaAs(001) under different conditions. Exposure of the GaAs substrate to Se flux before growth led to three-dimensional growth, whereas exposure to Zn flux led to two dimensional-growth. ZnS xSe 1-x and Zn 1-yMn yS xSe 1-x (energy gap less than 2.9 eV) layers with the lattice constant closely matched to that of GaAs have been grown with a good reproducibility.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposium - Proceedings
PublisherMaterials Research Society
Pages337-344
Number of pages8
Volume417
StatePublished - 1996
Externally publishedYes
EventProceedings of the 1995 MRS Fall Meeting - Boston, MA, USA
Duration: Nov 27 1995Dec 1 1995

Other

OtherProceedings of the 1995 MRS Fall Meeting
CityBoston, MA, USA
Period11/27/9512/1/95

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

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    Chen, Y. P., Saginur, M., Kim, C. C., Sivananthan, S., Smith, D., & Tsen, S. C. Y. (1996). Molecular beam epitaxial growth of ZnSe, ZnSSe and ZnMnSSe layers on GaAs substrates for blue-green laser structures. In Materials Research Society Symposium - Proceedings (Vol. 417, pp. 337-344). Materials Research Society.