Molecular beam epitaxial growth of ZnSe, ZnSSe and ZnMnSSe layers on GaAs substrates for blue-green laser structures

Y. P. Chen; M. Saginur; C. C. Kim; S. Sivananthan; David Smith; S. C Y Tsen

Molecular beam epitaxial growth of ZnSe, ZnSSe and ZnMnSSe layers on GaAs substrates for blue-green laser structures

Y. P. Chen, M. Saginur, C. C. Kim, S. Sivananthan, David Smith, S. C Y Tsen

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Single layers of ZnSe, ZnS _xSe _1-x and Zn _1-yMn _yS _xSe _1-x were grown on the GaAs(001). Real-time reflection high energy electron diffraction was used to study the initial growth of ZnSe(001) on GaAs(001) under different conditions. Exposure of the GaAs substrate to Se flux before growth led to three-dimensional growth, whereas exposure to Zn flux led to two dimensional-growth. ZnS _xSe _1-x and Zn _1-yMn _yS _xSe _1-x (energy gap less than 2.9 eV) layers with the lattice constant closely matched to that of GaAs have been grown with a good reproducibility.

Original language	English (US)
Title of host publication	Materials Research Society Symposium - Proceedings
Publisher	Materials Research Society
Pages	337-344
Number of pages	8
Volume	417
State	Published - 1996
Externally published	Yes
Event	Proceedings of the 1995 MRS Fall Meeting - Boston, MA, USA Duration: Nov 27 1995 → Dec 1 1995

Other

Other	Proceedings of the 1995 MRS Fall Meeting
City	Boston, MA, USA
Period	11/27/95 → 12/1/95

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials

Cite this

@inproceedings{fcee1cdc2469479b87a164465b2d0e7c,

title = "Molecular beam epitaxial growth of ZnSe, ZnSSe and ZnMnSSe layers on GaAs substrates for blue-green laser structures",

abstract = "Single layers of ZnSe, ZnS xSe 1-x and Zn 1-yMn yS xSe 1-x were grown on the GaAs(001). Real-time reflection high energy electron diffraction was used to study the initial growth of ZnSe(001) on GaAs(001) under different conditions. Exposure of the GaAs substrate to Se flux before growth led to three-dimensional growth, whereas exposure to Zn flux led to two dimensional-growth. ZnS xSe 1-x and Zn 1-yMn yS xSe 1-x (energy gap less than 2.9 eV) layers with the lattice constant closely matched to that of GaAs have been grown with a good reproducibility. ",

author = "Chen, {Y. P.} and M. Saginur and Kim, {C. C.} and S. Sivananthan and David Smith and Tsen, {S. C Y}",

year = "1996",

language = "English (US)",

volume = "417",

pages = "337--344",

booktitle = "Materials Research Society Symposium - Proceedings",

publisher = "Materials Research Society",

note = "Proceedings of the 1995 MRS Fall Meeting ; Conference date: 27-11-1995 Through 01-12-1995",

}

TY - GEN

T1 - Molecular beam epitaxial growth of ZnSe, ZnSSe and ZnMnSSe layers on GaAs substrates for blue-green laser structures

AU - Chen, Y. P.

AU - Saginur, M.

AU - Kim, C. C.

AU - Sivananthan, S.

AU - Smith, David

AU - Tsen, S. C Y

PY - 1996

Y1 - 1996

N2 - Single layers of ZnSe, ZnS xSe 1-x and Zn 1-yMn yS xSe 1-x were grown on the GaAs(001). Real-time reflection high energy electron diffraction was used to study the initial growth of ZnSe(001) on GaAs(001) under different conditions. Exposure of the GaAs substrate to Se flux before growth led to three-dimensional growth, whereas exposure to Zn flux led to two dimensional-growth. ZnS xSe 1-x and Zn 1-yMn yS xSe 1-x (energy gap less than 2.9 eV) layers with the lattice constant closely matched to that of GaAs have been grown with a good reproducibility.

AB - Single layers of ZnSe, ZnS xSe 1-x and Zn 1-yMn yS xSe 1-x were grown on the GaAs(001). Real-time reflection high energy electron diffraction was used to study the initial growth of ZnSe(001) on GaAs(001) under different conditions. Exposure of the GaAs substrate to Se flux before growth led to three-dimensional growth, whereas exposure to Zn flux led to two dimensional-growth. ZnS xSe 1-x and Zn 1-yMn yS xSe 1-x (energy gap less than 2.9 eV) layers with the lattice constant closely matched to that of GaAs have been grown with a good reproducibility.

UR - http://www.scopus.com/inward/record.url?scp=0029712765&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0029712765&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:0029712765

VL - 417

SP - 337

EP - 344

BT - Materials Research Society Symposium - Proceedings

PB - Materials Research Society

T2 - Proceedings of the 1995 MRS Fall Meeting

Y2 - 27 November 1995 through 1 December 1995

ER -

Molecular beam epitaxial growth of ZnSe, ZnSSe and ZnMnSSe layers on GaAs substrates for blue-green laser structures

Abstract

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ASJC Scopus subject areas

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