Modeling of quantum effects in ultrasmall FD-SOI MOSFETs with effective potentials and three-dimensional Monte Carlo

In this work, the effective potential is employed to account for the quantum mechanical effects of charge setback and elevated ground-state energy in the inversion layer of fully depleted (FD) SOI MOSFETs. We use the effective potential along with a three-dimensional Poisson solver and a Monte Carlo transport kernel to illustrate these quantum mechanical effects on the output characteristics of the transistor. It is demonstrated that the inclusion of such effects has a significant influence on the threshold voltage, carrier energy, and drive current of the device.