Modeling of quantum effects in ultrasmall FD-SOI MOSFETs with effective potentials and three-dimensional Monte Carlo

S. M. Ramey, D. K. Ferry

Research output: Contribution to journalArticle

31 Scopus citations

Abstract

In this work, the effective potential is employed to account for the quantum mechanical effects of charge setback and elevated ground-state energy in the inversion layer of fully depleted (FD) SOI MOSFETs. We use the effective potential along with a three-dimensional Poisson solver and a Monte Carlo transport kernel to illustrate these quantum mechanical effects on the output characteristics of the transistor. It is demonstrated that the inclusion of such effects has a significant influence on the threshold voltage, carrier energy, and drive current of the device.

Original languageEnglish (US)
Pages (from-to)350-353
Number of pages4
JournalPhysica B: Condensed Matter
Volume314
Issue number1-4
DOIs
StatePublished - Mar 1 2002

Keywords

  • Effective potential
  • Monte Carlo
  • SOI MOSFET

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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