TY - JOUR
T1 - Modeling of optical constants of InGaAs and InAlAs measured by spectroscopic ellipsometry
AU - Grassi, E.
AU - Johnson, Shane
AU - Beaudoin, M.
AU - Tsakalis, Konstantinos
N1 - Funding Information:
This work was supported by DARPA under contract MDA972-95-1-0016 managed by Lt.Col. G.S. Pomrenke.
PY - 1999/5
Y1 - 1999/5
N2 - Two databases of complex dielectric constants, for InGaAs and InAlAs, near-lattice matched to InP, and around temperatures of 500 °C, have been fit using a transfer function model with temperature and composition-dependent coefficients. The parameters of the model are determined with a least-squares algorithm with recursive `whitening' of the error, which shows fast convergence to a near-optimal solution, even when handling a large number of parameters. The model can be inverted by a simple algorithm to retrieve temperature and composition information from optical measurements obtained by spectroscopic ellipsometry. The level of accuracy achieved makes this method adequate for temperature, composition, and thickness determination during MBE growth.
AB - Two databases of complex dielectric constants, for InGaAs and InAlAs, near-lattice matched to InP, and around temperatures of 500 °C, have been fit using a transfer function model with temperature and composition-dependent coefficients. The parameters of the model are determined with a least-squares algorithm with recursive `whitening' of the error, which shows fast convergence to a near-optimal solution, even when handling a large number of parameters. The model can be inverted by a simple algorithm to retrieve temperature and composition information from optical measurements obtained by spectroscopic ellipsometry. The level of accuracy achieved makes this method adequate for temperature, composition, and thickness determination during MBE growth.
UR - http://www.scopus.com/inward/record.url?scp=0032660334&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0032660334&partnerID=8YFLogxK
U2 - 10.1016/S0022-0248(98)01530-9
DO - 10.1016/S0022-0248(98)01530-9
M3 - Conference article
AN - SCOPUS:0032660334
SN - 0022-0248
VL - 201
SP - 1081
EP - 1084
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
T2 - Proceedings of the 1998 10th International Conference on Molecular Beam Epitaxy (MBE-X)
Y2 - 31 August 1998 through 4 September 1998
ER -