Abstract

Two databases of complex dielectric constants, for InGaAs and InAlAs, near-lattice matched to InP, and around temperatures of 500 °C, have been fit using a transfer function model with temperature and composition-dependent coefficients. The parameters of the model are determined with a least-squares algorithm with recursive `whitening' of the error, which shows fast convergence to a near-optimal solution, even when handling a large number of parameters. The model can be inverted by a simple algorithm to retrieve temperature and composition information from optical measurements obtained by spectroscopic ellipsometry. The level of accuracy achieved makes this method adequate for temperature, composition, and thickness determination during MBE growth.

Original languageEnglish (US)
Pages (from-to)1081-1084
Number of pages4
JournalJournal of Crystal Growth
Volume201
DOIs
StatePublished - May 1999

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Optical constants
Spectroscopic ellipsometry
ellipsometry
Chemical analysis
Temperature
temperature
optical measurement
Molecular beam epitaxy
transfer functions
Transfer functions
Permittivity
permittivity
coefficients

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Modeling of optical constants of InGaAs and InAlAs measured by spectroscopic ellipsometry. / Grassi, E.; Johnson, Shane; Beaudoin, M.; Tsakalis, Konstantinos.

In: Journal of Crystal Growth, Vol. 201, 05.1999, p. 1081-1084.

Research output: Contribution to journalArticle

@article{abd44cb3d7a94869a15177c1793cde49,
title = "Modeling of optical constants of InGaAs and InAlAs measured by spectroscopic ellipsometry",
abstract = "Two databases of complex dielectric constants, for InGaAs and InAlAs, near-lattice matched to InP, and around temperatures of 500 °C, have been fit using a transfer function model with temperature and composition-dependent coefficients. The parameters of the model are determined with a least-squares algorithm with recursive `whitening' of the error, which shows fast convergence to a near-optimal solution, even when handling a large number of parameters. The model can be inverted by a simple algorithm to retrieve temperature and composition information from optical measurements obtained by spectroscopic ellipsometry. The level of accuracy achieved makes this method adequate for temperature, composition, and thickness determination during MBE growth.",
author = "E. Grassi and Shane Johnson and M. Beaudoin and Konstantinos Tsakalis",
year = "1999",
month = "5",
doi = "10.1016/S0022-0248(98)01530-9",
language = "English (US)",
volume = "201",
pages = "1081--1084",
journal = "Journal of Crystal Growth",
issn = "0022-0248",
publisher = "Elsevier",

}

TY - JOUR

T1 - Modeling of optical constants of InGaAs and InAlAs measured by spectroscopic ellipsometry

AU - Grassi, E.

AU - Johnson, Shane

AU - Beaudoin, M.

AU - Tsakalis, Konstantinos

PY - 1999/5

Y1 - 1999/5

N2 - Two databases of complex dielectric constants, for InGaAs and InAlAs, near-lattice matched to InP, and around temperatures of 500 °C, have been fit using a transfer function model with temperature and composition-dependent coefficients. The parameters of the model are determined with a least-squares algorithm with recursive `whitening' of the error, which shows fast convergence to a near-optimal solution, even when handling a large number of parameters. The model can be inverted by a simple algorithm to retrieve temperature and composition information from optical measurements obtained by spectroscopic ellipsometry. The level of accuracy achieved makes this method adequate for temperature, composition, and thickness determination during MBE growth.

AB - Two databases of complex dielectric constants, for InGaAs and InAlAs, near-lattice matched to InP, and around temperatures of 500 °C, have been fit using a transfer function model with temperature and composition-dependent coefficients. The parameters of the model are determined with a least-squares algorithm with recursive `whitening' of the error, which shows fast convergence to a near-optimal solution, even when handling a large number of parameters. The model can be inverted by a simple algorithm to retrieve temperature and composition information from optical measurements obtained by spectroscopic ellipsometry. The level of accuracy achieved makes this method adequate for temperature, composition, and thickness determination during MBE growth.

UR - http://www.scopus.com/inward/record.url?scp=0032660334&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0032660334&partnerID=8YFLogxK

U2 - 10.1016/S0022-0248(98)01530-9

DO - 10.1016/S0022-0248(98)01530-9

M3 - Article

AN - SCOPUS:0032660334

VL - 201

SP - 1081

EP - 1084

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

SN - 0022-0248

ER -