Modeling of ionizing radiation-induced degradation in multiple gate field effect transistors

Ivan S. Esqueda, Hugh Barnaby, Keith Holbert, Farah E. Mamouni, Ronald D. Schrimpf

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

The radiation response of advanced non-planar multiple gate field effect transistors (MuGFETs) has been shown to have a strong dependence on fin width (W). A scalable analytical model that can describe the radiation response of MuGFET devices as a function of W is presented here. A set of extracted parameters are used in conjunction with the closed-form expressions for the surface potential, thereby enabling accurate modeling of radiation-induced degradation of the I-V characteristics for these devices as a function of W. Total ionizing dose (TID) experiments are used to analyze and validate the modeling approach presented in this paper.

Original languageEnglish (US)
Title of host publication2009 European Conference on Radiation and Its Effects on Components and Systems
Subtitle of host publication10th RADECS Conference, RADECS 2009
Pages2-6
Number of pages5
DOIs
StatePublished - Dec 1 2009
Event2009 10th European Conference on Radiation and Its Effects on Components and Systems, RADECS 2009 - Bruges, Belgium
Duration: Sep 14 2009Sep 18 2009

Publication series

NameProceedings of the European Conference on Radiation and its Effects on Components and Systems, RADECS

Other

Other2009 10th European Conference on Radiation and Its Effects on Components and Systems, RADECS 2009
CountryBelgium
CityBruges
Period9/14/099/18/09

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Keywords

  • FinFETs
  • Multiple gate field effect transistors (MuGFETs)
  • silicon-on-insulator (SOI)
  • total ionizing dose (TID)

ASJC Scopus subject areas

  • Radiation
  • Electrical and Electronic Engineering

Cite this

Esqueda, I. S., Barnaby, H., Holbert, K., Mamouni, F. E., & Schrimpf, R. D. (2009). Modeling of ionizing radiation-induced degradation in multiple gate field effect transistors. In 2009 European Conference on Radiation and Its Effects on Components and Systems: 10th RADECS Conference, RADECS 2009 (pp. 2-6). [5994543] (Proceedings of the European Conference on Radiation and its Effects on Components and Systems, RADECS). https://doi.org/10.1109/RADECS.2009.5994543