Modeling of ionizing radiation-induced degradation in multiple gate field effect transistors

Ivan S. Esqueda; Hugh Barnaby; Keith Holbert; Farah E. Mamouni; Ronald D. Schrimpf

doi:10.1109/RADECS.2009.5994543

Modeling of ionizing radiation-induced degradation in multiple gate field effect transistors

Ivan S. Esqueda, Hugh Barnaby, Keith Holbert, Farah E. Mamouni, Ronald D. Schrimpf

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

3 Scopus citations

Abstract

The radiation response of advanced non-planar multiple gate field effect transistors (MuGFETs) has been shown to have a strong dependence on fin width (W). A scalable analytical model that can describe the radiation response of MuGFET devices as a function of W is presented here. A set of extracted parameters are used in conjunction with the closed-form expressions for the surface potential, thereby enabling accurate modeling of radiation-induced degradation of the I-V characteristics for these devices as a function of W. Total ionizing dose (TID) experiments are used to analyze and validate the modeling approach presented in this paper.

Original language	English (US)
Title of host publication	2009 European Conference on Radiation and Its Effects on Components and Systems
Subtitle of host publication	10th RADECS Conference, RADECS 2009
Pages	2-6
Number of pages	5
DOIs	https://doi.org/10.1109/RADECS.2009.5994543
State	Published - 2009
Event	2009 10th European Conference on Radiation and Its Effects on Components and Systems, RADECS 2009 - Bruges, Belgium Duration: Sep 14 2009 → Sep 18 2009

Publication series

Name	Proceedings of the European Conference on Radiation and its Effects on Components and Systems, RADECS

Other

Other	2009 10th European Conference on Radiation and Its Effects on Components and Systems, RADECS 2009
Country/Territory	Belgium
City	Bruges
Period	9/14/09 → 9/18/09

Keywords

FinFETs
Multiple gate field effect transistors (MuGFETs)
silicon-on-insulator (SOI)
total ionizing dose (TID)

ASJC Scopus subject areas

Radiation
Electrical and Electronic Engineering

Access to Document

10.1109/RADECS.2009.5994543

Cite this

Esqueda, I. S., Barnaby, H., Holbert, K., Mamouni, F. E., & Schrimpf, R. D. (2009). Modeling of ionizing radiation-induced degradation in multiple gate field effect transistors. In 2009 European Conference on Radiation and Its Effects on Components and Systems: 10th RADECS Conference, RADECS 2009 (pp. 2-6). Article 5994543 (Proceedings of the European Conference on Radiation and its Effects on Components and Systems, RADECS). https://doi.org/10.1109/RADECS.2009.5994543

Modeling of ionizing radiation-induced degradation in multiple gate field effect transistors. / Esqueda, Ivan S.; Barnaby, Hugh ; Holbert, Keith et al.
2009 European Conference on Radiation and Its Effects on Components and Systems: 10th RADECS Conference, RADECS 2009. 2009. p. 2-6 5994543 (Proceedings of the European Conference on Radiation and its Effects on Components and Systems, RADECS).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Esqueda, IS, Barnaby, H , Holbert, K, Mamouni, FE & Schrimpf, RD 2009, Modeling of ionizing radiation-induced degradation in multiple gate field effect transistors. in 2009 European Conference on Radiation and Its Effects on Components and Systems: 10th RADECS Conference, RADECS 2009., 5994543, Proceedings of the European Conference on Radiation and its Effects on Components and Systems, RADECS, pp. 2-6, 2009 10th European Conference on Radiation and Its Effects on Components and Systems, RADECS 2009, Bruges, Belgium, 9/14/09. https://doi.org/10.1109/RADECS.2009.5994543

Esqueda IS, Barnaby H , Holbert K, Mamouni FE, Schrimpf RD. Modeling of ionizing radiation-induced degradation in multiple gate field effect transistors. In 2009 European Conference on Radiation and Its Effects on Components and Systems: 10th RADECS Conference, RADECS 2009. 2009. p. 2-6. 5994543. (Proceedings of the European Conference on Radiation and its Effects on Components and Systems, RADECS). doi: 10.1109/RADECS.2009.5994543

Esqueda, Ivan S. ; Barnaby, Hugh ; Holbert, Keith et al. / Modeling of ionizing radiation-induced degradation in multiple gate field effect transistors. 2009 European Conference on Radiation and Its Effects on Components and Systems: 10th RADECS Conference, RADECS 2009. 2009. pp. 2-6 (Proceedings of the European Conference on Radiation and its Effects on Components and Systems, RADECS).

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abstract = "The radiation response of advanced non-planar multiple gate field effect transistors (MuGFETs) has been shown to have a strong dependence on fin width (W). A scalable analytical model that can describe the radiation response of MuGFET devices as a function of W is presented here. A set of extracted parameters are used in conjunction with the closed-form expressions for the surface potential, thereby enabling accurate modeling of radiation-induced degradation of the I-V characteristics for these devices as a function of W. Total ionizing dose (TID) experiments are used to analyze and validate the modeling approach presented in this paper.",

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AB - The radiation response of advanced non-planar multiple gate field effect transistors (MuGFETs) has been shown to have a strong dependence on fin width (W). A scalable analytical model that can describe the radiation response of MuGFET devices as a function of W is presented here. A set of extracted parameters are used in conjunction with the closed-form expressions for the surface potential, thereby enabling accurate modeling of radiation-induced degradation of the I-V characteristics for these devices as a function of W. Total ionizing dose (TID) experiments are used to analyze and validate the modeling approach presented in this paper.

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KW - silicon-on-insulator (SOI)

KW - total ionizing dose (TID)

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Modeling of ionizing radiation-induced degradation in multiple gate field effect transistors

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