Modeling growth behavior for Si1-xGex from SiH 4 and GeH4 by CVD

X. L. Yang, Meng Tao

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A kinetic model based on the collision theory of chemical reactions, statistical physics, and the concept of competitive adsorption is proposed for Si1-xGex growth from SiH4 and GeH4 by chemical vapor deposition. It takes into account both homogeneous and heterogeneous reactions, which involve the precursors (SiH4 and GeH4) and the homogeneous decomposition product of germane, germylene (GeH2), and three types surface sites, silicon sites, hydrogen-terminated silicon sites, and germanium sites. The growth of Si 1-xGex can be divided into two regimes: a heterogeneous decomposition dominated regime and a homogeneous decomposition dominated regime. Analytical equations are derived to quantitatively describe growth rate as a function of deposition conditions, including deposition temperature, silane flow rate, and germane flow rate, for the heterogeneous regime. Homogeneous decomposition of germane into germylene causes precursor depletion, and an empirical linear relation is employed to describe the growth behavior in the homogeneous regime. The model agrees well with the experimental data. Copyright The Electrochemical Society.

Original languageEnglish (US)
Title of host publicationECS Transactions
Pages299-309
Number of pages11
Volume2
Edition2
StatePublished - 2006
Externally publishedYes
Event10th International Symposium on Silicon Materials Science and Technology - 209th Meeting of the Electrochemical Society - Denver, CO, United States
Duration: May 7 2006May 12 2006

Other

Other10th International Symposium on Silicon Materials Science and Technology - 209th Meeting of the Electrochemical Society
CountryUnited States
CityDenver, CO
Period5/7/065/12/06

Fingerprint

Chemical vapor deposition
Decomposition
Flow rate
Silicon
Silanes
Germanium
Chemical reactions
Physics
Adsorption
Hydrogen
Kinetics
Temperature

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Yang, X. L., & Tao, M. (2006). Modeling growth behavior for Si1-xGex from SiH 4 and GeH4 by CVD. In ECS Transactions (2 ed., Vol. 2, pp. 299-309)

Modeling growth behavior for Si1-xGex from SiH 4 and GeH4 by CVD. / Yang, X. L.; Tao, Meng.

ECS Transactions. Vol. 2 2. ed. 2006. p. 299-309.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Yang, XL & Tao, M 2006, Modeling growth behavior for Si1-xGex from SiH 4 and GeH4 by CVD. in ECS Transactions. 2 edn, vol. 2, pp. 299-309, 10th International Symposium on Silicon Materials Science and Technology - 209th Meeting of the Electrochemical Society, Denver, CO, United States, 5/7/06.
Yang XL, Tao M. Modeling growth behavior for Si1-xGex from SiH 4 and GeH4 by CVD. In ECS Transactions. 2 ed. Vol. 2. 2006. p. 299-309
Yang, X. L. ; Tao, Meng. / Modeling growth behavior for Si1-xGex from SiH 4 and GeH4 by CVD. ECS Transactions. Vol. 2 2. ed. 2006. pp. 299-309
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