TY - GEN
T1 - Modeling and simulation of orientation-dependent fluctuations in nanowire field-effect biosensors using the stochastic linearized Poisson-Boltzmann equation
AU - Heitzinger, Clemens
AU - Mauser, Norbert J.
AU - Ringhofer, Christian
AU - Liu, Yang
AU - Dutton, Robert W.
PY - 2009
Y1 - 2009
N2 - We use the stochastic linearized Poisson-Boltzmann equation to model the fluctuations in nanowire field-effect biosensors due to changes in the orientation of the biomolecules. Different orientations of the biomolecules with respect to the sensor surface due to Brownian motion have different probabilities. The probabilities of the orientations are calculated from their electrostatic free energy. The structure considered here is a cross section through a rectangular silicon nanowire lying on a an oxide surface with a back-gate contact. The oxide surface of the nanowire is functionalized by biomolecules in an electrolyte with an electrode. Various combinations of PNA (peptide nucleic acid), single-stranded DNA, and double-stranded DNA are simulated to discuss the various states of a DNA sensor. A charge-transport models yields the current through the transducer that compares well with measurements.
AB - We use the stochastic linearized Poisson-Boltzmann equation to model the fluctuations in nanowire field-effect biosensors due to changes in the orientation of the biomolecules. Different orientations of the biomolecules with respect to the sensor surface due to Brownian motion have different probabilities. The probabilities of the orientations are calculated from their electrostatic free energy. The structure considered here is a cross section through a rectangular silicon nanowire lying on a an oxide surface with a back-gate contact. The oxide surface of the nanowire is functionalized by biomolecules in an electrolyte with an electrode. Various combinations of PNA (peptide nucleic acid), single-stranded DNA, and double-stranded DNA are simulated to discuss the various states of a DNA sensor. A charge-transport models yields the current through the transducer that compares well with measurements.
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U2 - 10.1109/SISPAD.2009.5290244
DO - 10.1109/SISPAD.2009.5290244
M3 - Conference contribution
AN - SCOPUS:74349115477
SN - 9781424439492
T3 - International Conference on Simulation of Semiconductor Processes and Devices, SISPAD
BT - SISPAD 2009 - 2009 International Conference on Simulation of Semiconductor Processes and Devices
T2 - SISPAD 2009 - 2009 International Conference on Simulation of Semiconductor Processes and Devices
Y2 - 9 September 2009 through 11 September 2009
ER -