Misfit strain relaxation by stacking fault generation in InGaN quantum wells grown on m-plane GaN

Research output: Contribution to journalArticle

27 Scopus citations


InGaN quantum wells, grown on non-polar m-plane GaN and emitting light at 560 nm, experience lattice mismatch strain relaxation by the generation of stacking faults. Each stacking fault terminates a basal plane from the substrate side, generating misfit dislocations that have a Burgers vector with a 1/2[0001] component. The structural and optical properties of such thin film structures are reported.

Original languageEnglish (US)
Pages (from-to)410021-410023
Number of pages3
JournalApplied Physics Express
Issue number4
Publication statusPublished - Apr 2009


ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this