Misfit strain relaxation by stacking fault generation in InGaN quantum wells grown on m-plane GaN

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Abstract

InGaN quantum wells, grown on non-polar m-plane GaN and emitting light at 560 nm, experience lattice mismatch strain relaxation by the generation of stacking faults. Each stacking fault terminates a basal plane from the substrate side, generating misfit dislocations that have a Burgers vector with a 1/2[0001] component. The structural and optical properties of such thin film structures are reported.

Original languageEnglish (US)
Pages (from-to)410021-410023
Number of pages3
JournalApplied Physics Express
Volume2
Issue number4
DOIs
Publication statusPublished - Apr 2009

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ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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