Misfit strain relaxation by stacking fault generation in InGaN quantum wells grown on m-plane GaN

Alec M. Fischer, Zhihao Wu, Kewei Sun, Qiyuan Wei, Yu Huang, Ryota Senda, Daisuke Iida, Motoaki Iwaya, Hiroshi Amano, Fernando Ponce

Research output: Contribution to journalArticle

24 Citations (Scopus)

Abstract

InGaN quantum wells, grown on non-polar m-plane GaN and emitting light at 560 nm, experience lattice mismatch strain relaxation by the generation of stacking faults. Each stacking fault terminates a basal plane from the substrate side, generating misfit dislocations that have a Burgers vector with a 1/2[0001] component. The structural and optical properties of such thin film structures are reported.

Original languageEnglish (US)
Pages (from-to)410021-410023
Number of pages3
JournalApplied Physics Express
Volume2
Issue number4
DOIs
StatePublished - Apr 2009

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Strain relaxation
Stacking faults
crystal defects
Semiconductor quantum wells
quantum wells
Burgers vector
Lattice mismatch
Dislocations (crystals)
Structural properties
Optical properties
optical properties
Thin films
Substrates
thin films

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Misfit strain relaxation by stacking fault generation in InGaN quantum wells grown on m-plane GaN. / Fischer, Alec M.; Wu, Zhihao; Sun, Kewei; Wei, Qiyuan; Huang, Yu; Senda, Ryota; Iida, Daisuke; Iwaya, Motoaki; Amano, Hiroshi; Ponce, Fernando.

In: Applied Physics Express, Vol. 2, No. 4, 04.2009, p. 410021-410023.

Research output: Contribution to journalArticle

Fischer, AM, Wu, Z, Sun, K, Wei, Q, Huang, Y, Senda, R, Iida, D, Iwaya, M, Amano, H & Ponce, F 2009, 'Misfit strain relaxation by stacking fault generation in InGaN quantum wells grown on m-plane GaN', Applied Physics Express, vol. 2, no. 4, pp. 410021-410023. https://doi.org/10.1143/APEX.2.041002
Fischer, Alec M. ; Wu, Zhihao ; Sun, Kewei ; Wei, Qiyuan ; Huang, Yu ; Senda, Ryota ; Iida, Daisuke ; Iwaya, Motoaki ; Amano, Hiroshi ; Ponce, Fernando. / Misfit strain relaxation by stacking fault generation in InGaN quantum wells grown on m-plane GaN. In: Applied Physics Express. 2009 ; Vol. 2, No. 4. pp. 410021-410023.
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