In study of microwave emission from n-InSb and 77 K in presence of electric and magnetic fields, rectangular InSb samples were cut so that long dimension and applied electric field were parallel to one of crystallographic axes 100, 110, or 111 and so that position of all other axes was known; instabilities in voltage across InSb sample accompanied microwave emission and, for limited range of electric and magnetic fields, these instabilities were in form of coherent oscillations; close correspondence between two effects was demonstrated.
|Original language||English (US)|
|Number of pages||5|
|Journal||IBM Journal of Research and Development|
|Publication status||Published - Sep 1969|
ASJC Scopus subject areas
- Hardware and Architecture