Microwave dielectric properties of Mn: BST and PST thin-films

Guru Subramanyam, Chonglin Chen, Sandwip Dey

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Scopus citations

Abstract

In this study, we characterized nano-structured Mn doped BST thin-films fabricated using a pulsed laser deposition process at the University of Houston, and PST thin-films fabricated using MOCVD at the Arizona State University. Coplanar waveguide test structures were used for experimental evaluation of the dielectric properties of the BST and PST thin-films fabricated on MgO and saphire substrates respectively. The test structures were fabricated on bare substrates as well as on the thin-film test samples for determination of attenuation and phase constants with and without the ferroelectric thin-films. The ε film for the Mn:BST film was approximately 1200 over the frequency range of 15-30 GHz with the loss-tangent averaging to 0.033. The PST thin-film on sapphire substrate had a zero-bias relative dielectric constant of 200 and the loss-tangent was estimated to be 0.05 over the measured frequency range of 10 to 18 GHz.

Original languageEnglish (US)
Title of host publicationIntegrated Ferroelectrics
Pages189-197
Number of pages9
Volume77
DOIs
StatePublished - 2006
EventSeventeenth International Symposium on Integrated Ferroelectrics, ISIF-17 - Shanghai, China
Duration: Apr 17 2005Apr 20 2005

Other

OtherSeventeenth International Symposium on Integrated Ferroelectrics, ISIF-17
CountryChina
CityShanghai
Period4/17/054/20/05

Keywords

  • BST thin-films
  • Ferroelectric thin-films
  • Microwave dielectrics
  • PST thin-films

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Physics and Astronomy (miscellaneous)
  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials

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  • Cite this

    Subramanyam, G., Chen, C., & Dey, S. (2006). Microwave dielectric properties of Mn: BST and PST thin-films. In Integrated Ferroelectrics (Vol. 77, pp. 189-197) https://doi.org/10.1080/10584580500414457