Microstructure of InGaN quantum wells

Fernando Ponce; D. Cherns; W. Goetz; R. S. Kern

Microstructure of InGaN quantum wells

Fernando Ponce, D. Cherns, W. Goetz, R. S. Kern

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

The microstructure of In _xGa _1-xN quantum wells with intermediate indium concentrations (x = 0.28 and 0.52) has been studied using transmission electron microscopy. High-resolution lattice images and dark-field images taken under high tilt conditions indicate that the quantum wells are inhomogeneous in character. Most of the area of the quantum wells is pseudomorphic with the GaN adjacent layer. However, misfit dislocations are sometimes observed, although with an inhomogeneous distribution. Strained cluster regions are observed in the high-indium concentration quantum wells, with dimensions ranging from 3 to 10 nm in diameter. Evidence is presented suggesting the extent of clustering depends on the exact orientation of the growth surface which is related to the columnar nature of the GaN/sapphire epitaxy.

Original language	English (US)
Title of host publication	Materials Research Society Symposium - Proceedings
Editors	S.R. Phillpot, P.D. Bristowe, D.G. Stroud, J.R. Smith
Publisher	MRS
Pages	453-458
Number of pages	6
Volume	482
State	Published - 1997
Externally published	Yes
Event	Proceedings of the 1997 MRS Fall Meeting - Boston, MA, USA Duration: Dec 1 1997 → Dec 4 1997

Other

Other	Proceedings of the 1997 MRS Fall Meeting
City	Boston, MA, USA
Period	12/1/97 → 12/4/97

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials

Cite this

@inproceedings{04095447d4374661a95695e99dc12c1d,

title = "Microstructure of InGaN quantum wells",

abstract = "The microstructure of In xGa 1-xN quantum wells with intermediate indium concentrations (x = 0.28 and 0.52) has been studied using transmission electron microscopy. High-resolution lattice images and dark-field images taken under high tilt conditions indicate that the quantum wells are inhomogeneous in character. Most of the area of the quantum wells is pseudomorphic with the GaN adjacent layer. However, misfit dislocations are sometimes observed, although with an inhomogeneous distribution. Strained cluster regions are observed in the high-indium concentration quantum wells, with dimensions ranging from 3 to 10 nm in diameter. Evidence is presented suggesting the extent of clustering depends on the exact orientation of the growth surface which is related to the columnar nature of the GaN/sapphire epitaxy. ",

author = "Fernando Ponce and D. Cherns and W. Goetz and Kern, {R. S.}",

year = "1997",

language = "English (US)",

volume = "482",

pages = "453--458",

editor = "S.R. Phillpot and P.D. Bristowe and D.G. Stroud and J.R. Smith",

booktitle = "Materials Research Society Symposium - Proceedings",

publisher = "MRS",

note = "Proceedings of the 1997 MRS Fall Meeting ; Conference date: 01-12-1997 Through 04-12-1997",

}

TY - GEN

T1 - Microstructure of InGaN quantum wells

AU - Ponce, Fernando

AU - Cherns, D.

AU - Goetz, W.

AU - Kern, R. S.

PY - 1997

Y1 - 1997

N2 - The microstructure of In xGa 1-xN quantum wells with intermediate indium concentrations (x = 0.28 and 0.52) has been studied using transmission electron microscopy. High-resolution lattice images and dark-field images taken under high tilt conditions indicate that the quantum wells are inhomogeneous in character. Most of the area of the quantum wells is pseudomorphic with the GaN adjacent layer. However, misfit dislocations are sometimes observed, although with an inhomogeneous distribution. Strained cluster regions are observed in the high-indium concentration quantum wells, with dimensions ranging from 3 to 10 nm in diameter. Evidence is presented suggesting the extent of clustering depends on the exact orientation of the growth surface which is related to the columnar nature of the GaN/sapphire epitaxy.

AB - The microstructure of In xGa 1-xN quantum wells with intermediate indium concentrations (x = 0.28 and 0.52) has been studied using transmission electron microscopy. High-resolution lattice images and dark-field images taken under high tilt conditions indicate that the quantum wells are inhomogeneous in character. Most of the area of the quantum wells is pseudomorphic with the GaN adjacent layer. However, misfit dislocations are sometimes observed, although with an inhomogeneous distribution. Strained cluster regions are observed in the high-indium concentration quantum wells, with dimensions ranging from 3 to 10 nm in diameter. Evidence is presented suggesting the extent of clustering depends on the exact orientation of the growth surface which is related to the columnar nature of the GaN/sapphire epitaxy.

UR - http://www.scopus.com/inward/record.url?scp=0031370265&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0031370265&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:0031370265

VL - 482

SP - 453

EP - 458

BT - Materials Research Society Symposium - Proceedings

A2 - Phillpot, S.R.

A2 - Bristowe, P.D.

A2 - Stroud, D.G.

A2 - Smith, J.R.

PB - MRS

T2 - Proceedings of the 1997 MRS Fall Meeting

Y2 - 1 December 1997 through 4 December 1997

ER -

Microstructure of InGaN quantum wells

Abstract

Other

ASJC Scopus subject areas

Other files and links

Fingerprint

Cite this