Microstructure of InGaN quantum wells

Fernando Ponce, D. Cherns, W. Goetz, R. S. Kern

Research output: Chapter in Book/Report/Conference proceedingConference contribution

14 Scopus citations

Abstract

The microstructure of In xGa 1-xN quantum wells with intermediate indium concentrations (x = 0.28 and 0.52) has been studied using transmission electron microscopy. High-resolution lattice images and dark-field images taken under high tilt conditions indicate that the quantum wells are inhomogeneous in character. Most of the area of the quantum wells is pseudomorphic with the GaN adjacent layer. However, misfit dislocations are sometimes observed, although with an inhomogeneous distribution. Strained cluster regions are observed in the high-indium concentration quantum wells, with dimensions ranging from 3 to 10 nm in diameter. Evidence is presented suggesting the extent of clustering depends on the exact orientation of the growth surface which is related to the columnar nature of the GaN/sapphire epitaxy.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposium - Proceedings
EditorsS.R. Phillpot, P.D. Bristowe, D.G. Stroud, J.R. Smith
PublisherMRS
Pages453-458
Number of pages6
Volume482
StatePublished - 1997
Externally publishedYes
EventProceedings of the 1997 MRS Fall Meeting - Boston, MA, USA
Duration: Dec 1 1997Dec 4 1997

Other

OtherProceedings of the 1997 MRS Fall Meeting
CityBoston, MA, USA
Period12/1/9712/4/97

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

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    Ponce, F., Cherns, D., Goetz, W., & Kern, R. S. (1997). Microstructure of InGaN quantum wells. In S. R. Phillpot, P. D. Bristowe, D. G. Stroud, & J. R. Smith (Eds.), Materials Research Society Symposium - Proceedings (Vol. 482, pp. 453-458). MRS.