Microstructure and polarization properties of III-nitride semiconductors

Research output: Chapter in Book/Report/Conference proceedingChapter

Abstract

Much research in the past five decades has been done on the group III nitrides (III-N) comprising the Al-Ga-In-N alloys, which have a characteristic wide bandgap necessary for many applications, such as short-wavelength visible-light emission [1-3]. The success of the nitride semiconductor technology rests significantly on the control of its microstructure [4,5]. The early development of these materials dates back from the growth of AlN in 1907 [6] to the successful epitaxial growth of GaN in 1969 [7]. Some of the key steps in the development of the III-N semiconductors, which culminated with the demonstration of blue and ultraviolet diode lasers in 1996, are listed in Table 2.1.

Original languageEnglish (US)
Title of host publicationHandbook of GaN Semiconductor Materials and Devices
PublisherCRC Press
Pages53-86
Number of pages34
ISBN (Electronic)9781498747141
ISBN (Print)9781498747134
DOIs
StatePublished - Jan 1 2017

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ASJC Scopus subject areas

  • Physics and Astronomy(all)
  • Engineering(all)
  • Materials Science(all)

Cite this

Ponce, F. (2017). Microstructure and polarization properties of III-nitride semiconductors. In Handbook of GaN Semiconductor Materials and Devices (pp. 53-86). CRC Press. https://doi.org/10.1201/9781315152011