Microstructural properties of InAs/InAsxSb1-x superlattices and InASxSb1-x ordered alloys grown by modulated molecular beam epitaxy

Yong-Hang Zhang, A. Lew, E. Yu, Y. Chen

Research output: Contribution to journalArticle

6 Scopus citations

Abstract

Modulated molecular beam epitaxy (MMBE) has been demonstrated to be useful in controlling group-V alloys such as InAsxSb1-x and AlAsxSb1-x. Further studies of the MMBE grown InAsxSb1-x ordered alloys and InAs/InAsxSb1-x superlattices by using cross-sectional scanning tunneling microscopy show well defined interfaces between InAsxSb1-x ordered alloys and InAs. Clear composition modulation is observed in the InAsxSb1-x ordered alloy layers. Transmission electron diffraction and microscopy, X-ray diffraction, and low temperature photoluminescence experiments show no obvious sign of CuPt orderings. These results suggest that MMBE provides a possible means to bypass the ordering problem of InAsxSb1-x random alloys.

Original languageEnglish (US)
Pages (from-to)833-837
Number of pages5
JournalJournal of Crystal Growth
Volume175-176
Issue numberPART 2
DOIs
StatePublished - May 1997

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Keywords

  • InAs
  • InAsSb
  • InSb
  • MBE
  • STM
  • TEM

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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