Abstract
Modulated molecular beam epitaxy (MMBE) has been demonstrated to be useful in controlling group-V alloys such as InAsxSb1-x and AlAsxSb1-x. Further studies of the MMBE grown InAsxSb1-x ordered alloys and InAs/InAsxSb1-x superlattices by using cross-sectional scanning tunneling microscopy show well defined interfaces between InAsxSb1-x ordered alloys and InAs. Clear composition modulation is observed in the InAsxSb1-x ordered alloy layers. Transmission electron diffraction and microscopy, X-ray diffraction, and low temperature photoluminescence experiments show no obvious sign of CuPt orderings. These results suggest that MMBE provides a possible means to bypass the ordering problem of InAsxSb1-x random alloys.
Original language | English (US) |
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Pages (from-to) | 833-837 |
Number of pages | 5 |
Journal | Journal of Crystal Growth |
Volume | 175-176 |
Issue number | PART 2 |
DOIs | |
State | Published - May 1997 |
Keywords
- InAs
- InAsSb
- InSb
- MBE
- STM
- TEM
ASJC Scopus subject areas
- Condensed Matter Physics
- Inorganic Chemistry
- Materials Chemistry