Micro-Raman study of electronic properties of inversion domains in GaN-based lateral polarity heterostructures

M. Park; J. J. Cuomo; B. J. Rodriguez; W. C. Yang; R. J. Nemanich; O. Ambacher

doi:10.1063/1.1570507

Micro-Raman study of electronic properties of inversion domains in GaN-based lateral polarity heterostructures

M. Park, J. J. Cuomo, B. J. Rodriguez, W. C. Yang, R. J. Nemanich, O. Ambacher

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Abstract

Electronic properties of the inversion domains in GaN-based lateral polarity heterostructures were discussed. Micro-Raman spectroscopy was used and piezoelectric polarization of each domain was studied. Results showed that the electron concentration in the N-face domain is slightly higher than that of Ga-face domain.

Original language	English (US)
Pages (from-to)	9542-9547
Number of pages	6
Journal	Journal of Applied Physics
Volume	93
Issue number	12
DOIs	https://doi.org/10.1063/1.1570507
State	Published - Jun 15 2003
Externally published	Yes

ASJC Scopus subject areas

General Physics and Astronomy

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10.1063/1.1570507

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title = "Micro-Raman study of electronic properties of inversion domains in GaN-based lateral polarity heterostructures",

abstract = "Electronic properties of the inversion domains in GaN-based lateral polarity heterostructures were discussed. Micro-Raman spectroscopy was used and piezoelectric polarization of each domain was studied. Results showed that the electron concentration in the N-face domain is slightly higher than that of Ga-face domain.",

author = "M. Park and Cuomo, {J. J.} and Rodriguez, {B. J.} and Yang, {W. C.} and Nemanich, {R. J.} and O. Ambacher",

year = "2003",

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language = "English (US)",

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journal = "Journal of Applied Physics",

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AU - Park, M.

AU - Cuomo, J. J.

AU - Rodriguez, B. J.

AU - Yang, W. C.

AU - Nemanich, R. J.

AU - Ambacher, O.

PY - 2003/6/15

Y1 - 2003/6/15

N2 - Electronic properties of the inversion domains in GaN-based lateral polarity heterostructures were discussed. Micro-Raman spectroscopy was used and piezoelectric polarization of each domain was studied. Results showed that the electron concentration in the N-face domain is slightly higher than that of Ga-face domain.

AB - Electronic properties of the inversion domains in GaN-based lateral polarity heterostructures were discussed. Micro-Raman spectroscopy was used and piezoelectric polarization of each domain was studied. Results showed that the electron concentration in the N-face domain is slightly higher than that of Ga-face domain.

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DO - 10.1063/1.1570507

M3 - Article

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JO - Journal of Applied Physics

JF - Journal of Applied Physics

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Micro-Raman study of electronic properties of inversion domains in GaN-based lateral polarity heterostructures

Abstract

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