Micro-Raman study of electronic properties of inversion domains in GaN-based lateral polarity heterostructures

M. Park, J. J. Cuomo, B. J. Rodriguez, W. C. Yang, R. J. Nemanich, O. Ambacher

Research output: Contribution to journalArticle

27 Scopus citations

Abstract

Electronic properties of the inversion domains in GaN-based lateral polarity heterostructures were discussed. Micro-Raman spectroscopy was used and piezoelectric polarization of each domain was studied. Results showed that the electron concentration in the N-face domain is slightly higher than that of Ga-face domain.

Original languageEnglish (US)
Pages (from-to)9542-9547
Number of pages6
JournalJournal of Applied Physics
Volume93
Issue number12
DOIs
StatePublished - Jun 15 2003

    Fingerprint

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this