Mg incorporation in AlGaN layers grown on grooved sapphire substrates

D. Cherns; M. Q. Baines; Y. Q. Wang; R. Liu; Fernando Ponce; H. Amano; I. Akasaki

doi:10.1002/1521-3951(200212)234:3<850::AID-PSSB850>3.0.CO;2-G

Mg incorporation in AlGaN layers grown on grooved sapphire substrates

D. Cherns, M. Q. Baines, Y. Q. Wang, R. Liu, Fernando Ponce, H. Amano, I. Akasaki

Physics

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

Transmission electron microscopy has been used to examine the spatial distribution of Mg-related precipitates in an Al_0.03Ga_0.97N layer grown by metal-organic chemical vapour deposition on a grooved sapphire substrate. It is shown that Mg precipitation takes place in vertical, but not in lateral, growth sectors. Evidence is presented for Mg segregation to edge and mixed dislocations leading to these dislocations having hollow cores with diameters of 1-2 nm. It is concluded that during growth Mg segregates to sinks on the (0001) surface, but not on inclined growth facets.

Original language	English (US)
Pages (from-to)	850-854
Number of pages	5
Journal	Physica Status Solidi (B) Basic Research
Volume	234
Issue number	3
DOIs	https://doi.org/10.1002/1521-3951(200212)234:3<850::AID-PSSB850>3.0.CO;2-G
State	Published - Dec 1 2002

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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10.1002/1521-3951(200212)234:3<850::AID-PSSB850>3.0.CO;2-G

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@article{a76cb51823f0437cb1002b9f5681e451,

title = "Mg incorporation in AlGaN layers grown on grooved sapphire substrates",

abstract = "Transmission electron microscopy has been used to examine the spatial distribution of Mg-related precipitates in an Al0.03Ga0.97N layer grown by metal-organic chemical vapour deposition on a grooved sapphire substrate. It is shown that Mg precipitation takes place in vertical, but not in lateral, growth sectors. Evidence is presented for Mg segregation to edge and mixed dislocations leading to these dislocations having hollow cores with diameters of 1-2 nm. It is concluded that during growth Mg segregates to sinks on the (0001) surface, but not on inclined growth facets.",

author = "D. Cherns and Baines, {M. Q.} and Wang, {Y. Q.} and R. Liu and Fernando Ponce and H. Amano and I. Akasaki",

year = "2002",

month = dec,

day = "1",

doi = "10.1002/1521-3951(200212)234:3<850::AID-PSSB850>3.0.CO;2-G",

language = "English (US)",

volume = "234",

pages = "850--854",

journal = "Physica Status Solidi (B) Basic Research",

issn = "0370-1972",

publisher = "Wiley-VCH Verlag",

number = "3",

}

TY - JOUR

T1 - Mg incorporation in AlGaN layers grown on grooved sapphire substrates

AU - Cherns, D.

AU - Baines, M. Q.

AU - Wang, Y. Q.

AU - Liu, R.

AU - Ponce, Fernando

AU - Amano, H.

AU - Akasaki, I.

PY - 2002/12/1

Y1 - 2002/12/1

N2 - Transmission electron microscopy has been used to examine the spatial distribution of Mg-related precipitates in an Al0.03Ga0.97N layer grown by metal-organic chemical vapour deposition on a grooved sapphire substrate. It is shown that Mg precipitation takes place in vertical, but not in lateral, growth sectors. Evidence is presented for Mg segregation to edge and mixed dislocations leading to these dislocations having hollow cores with diameters of 1-2 nm. It is concluded that during growth Mg segregates to sinks on the (0001) surface, but not on inclined growth facets.

AB - Transmission electron microscopy has been used to examine the spatial distribution of Mg-related precipitates in an Al0.03Ga0.97N layer grown by metal-organic chemical vapour deposition on a grooved sapphire substrate. It is shown that Mg precipitation takes place in vertical, but not in lateral, growth sectors. Evidence is presented for Mg segregation to edge and mixed dislocations leading to these dislocations having hollow cores with diameters of 1-2 nm. It is concluded that during growth Mg segregates to sinks on the (0001) surface, but not on inclined growth facets.

UR - http://www.scopus.com/inward/record.url?scp=0036924915&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0036924915&partnerID=8YFLogxK

U2 - 10.1002/1521-3951(200212)234:3<850::AID-PSSB850>3.0.CO;2-G

DO - 10.1002/1521-3951(200212)234:3<850::AID-PSSB850>3.0.CO;2-G

M3 - Article

AN - SCOPUS:0036924915

SN - 0370-1972

VL - 234

SP - 850

EP - 854

JO - Physica Status Solidi (B) Basic Research

JF - Physica Status Solidi (B) Basic Research

IS - 3

ER -

Mg incorporation in AlGaN layers grown on grooved sapphire substrates

Abstract

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