Mg incorporation in AlGaN layers grown on grooved sapphire substrates

D. Cherns, M. Q. Baines, Y. Q. Wang, R. Liu, Fernando Ponce, H. Amano, I. Akasaki

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

Transmission electron microscopy has been used to examine the spatial distribution of Mg-related precipitates in an Al0.03Ga0.97N layer grown by metal-organic chemical vapour deposition on a grooved sapphire substrate. It is shown that Mg precipitation takes place in vertical, but not in lateral, growth sectors. Evidence is presented for Mg segregation to edge and mixed dislocations leading to these dislocations having hollow cores with diameters of 1-2 nm. It is concluded that during growth Mg segregates to sinks on the (0001) surface, but not on inclined growth facets.

Original languageEnglish (US)
Pages (from-to)850-854
Number of pages5
JournalPhysica Status Solidi (B) Basic Research
Volume234
Issue number3
DOIs
StatePublished - Dec 2002

Fingerprint

Aluminum Oxide
Sapphire
sapphire
Substrates
Organic Chemicals
Organic chemicals
edge dislocations
sinks
Spatial distribution
metalorganic chemical vapor deposition
Precipitates
flat surfaces
precipitates
Chemical vapor deposition
hollow
spatial distribution
sectors
Metals
Transmission electron microscopy
transmission electron microscopy

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Mg incorporation in AlGaN layers grown on grooved sapphire substrates. / Cherns, D.; Baines, M. Q.; Wang, Y. Q.; Liu, R.; Ponce, Fernando; Amano, H.; Akasaki, I.

In: Physica Status Solidi (B) Basic Research, Vol. 234, No. 3, 12.2002, p. 850-854.

Research output: Contribution to journalArticle

Cherns, D. ; Baines, M. Q. ; Wang, Y. Q. ; Liu, R. ; Ponce, Fernando ; Amano, H. ; Akasaki, I. / Mg incorporation in AlGaN layers grown on grooved sapphire substrates. In: Physica Status Solidi (B) Basic Research. 2002 ; Vol. 234, No. 3. pp. 850-854.
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