Mesoscopic transport properties of in-plane gate defined quantum wires

David P. Pivin, David K. Ferry

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

We study the resistance of narrow AlGaAs/GaAs in-plane gate quantum wires versus gate voltage and magnetic field at 1.2 K. A practical method of determining the effective width of the wire is presented. A transition to boundary dominant scattering occurs as the effective width is decreased and becomes comparable to the mean free path. Beyond this transition, an alternative mean free path, l = αW, is used. Results for effective width compare well to those from the estimate due to the onset of Landau quantization at W ≈ rC. The in-plane gate structure is proposed as a suitable system for studying mesoscopic phenomena, specifically the scaling of universal conductance fluctuations.

Original languageEnglish (US)
Pages (from-to)50-53
Number of pages4
JournalPhysica B: Condensed Matter
Volume227
Issue number1-4
StatePublished - Sep 1996

Fingerprint

Semiconductor quantum wires
quantum wires
Transport properties
transport properties
Wire
Scattering
Magnetic fields
mean free path
Electric potential
aluminum gallium arsenides
wire
scaling
electric potential
estimates
scattering
magnetic fields
gallium arsenide

Keywords

  • Effective width
  • In-plane gate
  • Quantum wire

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics

Cite this

Mesoscopic transport properties of in-plane gate defined quantum wires. / Pivin, David P.; Ferry, David K.

In: Physica B: Condensed Matter, Vol. 227, No. 1-4, 09.1996, p. 50-53.

Research output: Contribution to journalArticle

Pivin, David P. ; Ferry, David K. / Mesoscopic transport properties of in-plane gate defined quantum wires. In: Physica B: Condensed Matter. 1996 ; Vol. 227, No. 1-4. pp. 50-53.
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