Mesoscopic transport properties of in-plane gate defined quantum wires

David P. Pivin; David K. Ferry

doi:10.1016/0921-4526(96)00335-3

Mesoscopic transport properties of in-plane gate defined quantum wires

David P. Pivin, David K. Ferry

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

We study the resistance of narrow AlGaAs/GaAs in-plane gate quantum wires versus gate voltage and magnetic field at 1.2 K. A practical method of determining the effective width of the wire is presented. A transition to boundary dominant scattering occurs as the effective width is decreased and becomes comparable to the mean free path. Beyond this transition, an alternative mean free path, l = αW, is used. Results for effective width compare well to those from the estimate due to the onset of Landau quantization at W ≈ r_C. The in-plane gate structure is proposed as a suitable system for studying mesoscopic phenomena, specifically the scaling of universal conductance fluctuations.

Original language	English (US)
Pages (from-to)	50-53
Number of pages	4
Journal	Physica B: Condensed Matter
Volume	227
Issue number	1-4
DOIs	https://doi.org/10.1016/0921-4526(96)00335-3
State	Published - Sep 1996

Keywords

Effective width
In-plane gate
Quantum wire

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering

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10.1016/0921-4526(96)00335-3

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abstract = "We study the resistance of narrow AlGaAs/GaAs in-plane gate quantum wires versus gate voltage and magnetic field at 1.2 K. A practical method of determining the effective width of the wire is presented. A transition to boundary dominant scattering occurs as the effective width is decreased and becomes comparable to the mean free path. Beyond this transition, an alternative mean free path, l = αW, is used. Results for effective width compare well to those from the estimate due to the onset of Landau quantization at W ≈ rC. The in-plane gate structure is proposed as a suitable system for studying mesoscopic phenomena, specifically the scaling of universal conductance fluctuations.",

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AU - Pivin, David P.

AU - Ferry, David K.

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N2 - We study the resistance of narrow AlGaAs/GaAs in-plane gate quantum wires versus gate voltage and magnetic field at 1.2 K. A practical method of determining the effective width of the wire is presented. A transition to boundary dominant scattering occurs as the effective width is decreased and becomes comparable to the mean free path. Beyond this transition, an alternative mean free path, l = αW, is used. Results for effective width compare well to those from the estimate due to the onset of Landau quantization at W ≈ rC. The in-plane gate structure is proposed as a suitable system for studying mesoscopic phenomena, specifically the scaling of universal conductance fluctuations.

AB - We study the resistance of narrow AlGaAs/GaAs in-plane gate quantum wires versus gate voltage and magnetic field at 1.2 K. A practical method of determining the effective width of the wire is presented. A transition to boundary dominant scattering occurs as the effective width is decreased and becomes comparable to the mean free path. Beyond this transition, an alternative mean free path, l = αW, is used. Results for effective width compare well to those from the estimate due to the onset of Landau quantization at W ≈ rC. The in-plane gate structure is proposed as a suitable system for studying mesoscopic phenomena, specifically the scaling of universal conductance fluctuations.

KW - Effective width

KW - In-plane gate

KW - Quantum wire

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JO - Physica B: Condensed Matter

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ER -

Mesoscopic transport properties of in-plane gate defined quantum wires

Abstract

Keywords

ASJC Scopus subject areas

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