Mechanically modulated tunneling resistance in monolayer MoS2

Deyi Fu, Jian Zhou, Sefaattin Tongay, Kai Liu, Wen Fan, Tsu Jae King Liu, Junqiao Wu

Research output: Contribution to journalArticlepeer-review

40 Scopus citations


We report on the modulation of tunneling resistance in MoS2 monolayers using a conductive atomic force microscope (AFM). The resistance between the conductive AFM probe and the bottom electrode separated by a monolayer MoS2 is reversibly reduced by up to 4 orders of magnitude, which is attributed to enhanced quantum tunneling when the monolayer is compressed by the tip force. Under the Wentzel-Kramers-Brillouim approximation, the experimental data are quantitatively explained by using the metal-insulator-metal tunneling diode model. As an ideal tunneling medium, the defect-free, nanometer-thick MoS2 monolayer can serve as the active layer for non-impacting nano-electro-mechanical switches.

Original languageEnglish (US)
Article number183105
JournalApplied Physics Letters
Issue number18
StatePublished - Oct 28 2013
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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