Mechanically modulated tunneling resistance in monolayer MoS2

Deyi Fu, Jian Zhou, Sefaattin Tongay, Kai Liu, Wen Fan, Tsu Jae King Liu, Junqiao Wu

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    31 Scopus citations


    We report on the modulation of tunneling resistance in MoS2 monolayers using a conductive atomic force microscope (AFM). The resistance between the conductive AFM probe and the bottom electrode separated by a monolayer MoS2 is reversibly reduced by up to 4 orders of magnitude, which is attributed to enhanced quantum tunneling when the monolayer is compressed by the tip force. Under the Wentzel-Kramers-Brillouim approximation, the experimental data are quantitatively explained by using the metal-insulator-metal tunneling diode model. As an ideal tunneling medium, the defect-free, nanometer-thick MoS2 monolayer can serve as the active layer for non-impacting nano-electro-mechanical switches.

    Original languageEnglish (US)
    Article number183105
    JournalApplied Physics Letters
    Issue number18
    StatePublished - Oct 28 2013

    ASJC Scopus subject areas

    • Physics and Astronomy (miscellaneous)

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    Fu, D., Zhou, J., Tongay, S., Liu, K., Fan, W., King Liu, T. J., & Wu, J. (2013). Mechanically modulated tunneling resistance in monolayer MoS2. Applied Physics Letters, 103(18), [183105].