Measurement of polarization-induced electric fields in GaN/AlInN quantum wells

Lin Zhou; Marcus Gonschorek; Etienne Giraud; E. Feltin; J. F. Carlin; Nicolas Grandjean; David Smith; Martha McCartney

doi:10.1063/1.4772633

Measurement of polarization-induced electric fields in GaN/AlInN quantum wells

Lin Zhou, Marcus Gonschorek, Etienne Giraud, E. Feltin, J. F. Carlin, Nicolas Grandjean, David Smith, Martha McCartney

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

GaN(Si)/AlInN multiple quantum wells were grown on GaN/Al₂O ₃ (0001) templates by metalorganic vapor-phase epitaxy. Transmission electron microscopy observations showed well-defined GaN quantum wells and AlInN barrier layers. Electrostatic potential profiles across the heterostructure have been measured using off-axis electron holography. A polarization-induced electric field with magnitude of ∼2.2 ± 0.1 MV/cm was measured across the GaN quantum wells, in reasonable agreement with simulated values. However, the measured fields across the AlInN barriers were considerably less than predicted from simulations: possible reasons are briefly discussed.

Original language	English (US)
Article number	251902
Journal	Applied Physics Letters
Volume	101
Issue number	25
DOIs	https://doi.org/10.1063/1.4772633
State	Published - Dec 17 2012

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.4772633

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title = "Measurement of polarization-induced electric fields in GaN/AlInN quantum wells",

abstract = "GaN(Si)/AlInN multiple quantum wells were grown on GaN/Al2O 3 (0001) templates by metalorganic vapor-phase epitaxy. Transmission electron microscopy observations showed well-defined GaN quantum wells and AlInN barrier layers. Electrostatic potential profiles across the heterostructure have been measured using off-axis electron holography. A polarization-induced electric field with magnitude of ∼2.2 ± 0.1 MV/cm was measured across the GaN quantum wells, in reasonable agreement with simulated values. However, the measured fields across the AlInN barriers were considerably less than predicted from simulations: possible reasons are briefly discussed.",

author = "Lin Zhou and Marcus Gonschorek and Etienne Giraud and E. Feltin and Carlin, {J. F.} and Nicolas Grandjean and David Smith and Martha McCartney",

note = "Funding Information: This work was partially supported by the NCCR Quantum Photonics (NCCR QP), research instrument of the Swiss National Science Foundation (SNSF). We also acknowledge the use of facilities in the John M. Cowley Center for High Resolution Electron Microscopy at Arizona State University.",

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doi = "10.1063/1.4772633",

language = "English (US)",

volume = "101",

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T1 - Measurement of polarization-induced electric fields in GaN/AlInN quantum wells

AU - Zhou, Lin

AU - Gonschorek, Marcus

AU - Giraud, Etienne

AU - Feltin, E.

AU - Carlin, J. F.

AU - Grandjean, Nicolas

AU - Smith, David

AU - McCartney, Martha

N1 - Funding Information: This work was partially supported by the NCCR Quantum Photonics (NCCR QP), research instrument of the Swiss National Science Foundation (SNSF). We also acknowledge the use of facilities in the John M. Cowley Center for High Resolution Electron Microscopy at Arizona State University.

PY - 2012/12/17

Y1 - 2012/12/17

N2 - GaN(Si)/AlInN multiple quantum wells were grown on GaN/Al2O 3 (0001) templates by metalorganic vapor-phase epitaxy. Transmission electron microscopy observations showed well-defined GaN quantum wells and AlInN barrier layers. Electrostatic potential profiles across the heterostructure have been measured using off-axis electron holography. A polarization-induced electric field with magnitude of ∼2.2 ± 0.1 MV/cm was measured across the GaN quantum wells, in reasonable agreement with simulated values. However, the measured fields across the AlInN barriers were considerably less than predicted from simulations: possible reasons are briefly discussed.

AB - GaN(Si)/AlInN multiple quantum wells were grown on GaN/Al2O 3 (0001) templates by metalorganic vapor-phase epitaxy. Transmission electron microscopy observations showed well-defined GaN quantum wells and AlInN barrier layers. Electrostatic potential profiles across the heterostructure have been measured using off-axis electron holography. A polarization-induced electric field with magnitude of ∼2.2 ± 0.1 MV/cm was measured across the GaN quantum wells, in reasonable agreement with simulated values. However, the measured fields across the AlInN barriers were considerably less than predicted from simulations: possible reasons are briefly discussed.

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Measurement of polarization-induced electric fields in GaN/AlInN quantum wells

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