MBE growth of II-VI materials on GaSb substrates for photovoltaic applications

S. Wang; D. Ding; X. Liu; X. B. Zhang; David Smith; J. K. Furdyna; Yong-Hang Zhang

doi:10.1016/j.jcrysgro.2008.09.189

MBE growth of II-VI materials on GaSb substrates for photovoltaic applications

S. Wang, D. Ding, X. Liu, X. B. Zhang, David Smith, J. K. Furdyna, Yong-Hang Zhang

Research output: Contribution to journal › Article › peer-review

36 Scopus citations

Abstract

The II-VI materials lattice matched to GaSb substrates are desirable for ultrahigh-efficiency multijunction solar cells. This paper reports the growth of ZnTe and ZnCdTe/ZnTe quantum wells on undoped GaSb (1 0 0) substrates using molecular beam epitaxy. During growth, in situ reflection high-energy electron diffraction shows fast and smooth transition from GaSb surface to ZnTe surface. Post-growth structural characterization using X-ray diffraction and high-resolution transmission electron microscopy reveals very low-defect density, i.e. high crystalline quality. Visible photoluminescence is observed from 10 to 300 K.

Original language	English (US)
Pages (from-to)	2116-2119
Number of pages	4
Journal	Journal of Crystal Growth
Volume	311
Issue number	7
DOIs	https://doi.org/10.1016/j.jcrysgro.2008.09.189
State	Published - Mar 15 2009

Keywords

A1. X-ray diffraction
A3. Molecular beam epitaxy
B2. Semiconducting II-VI materials
B3. Solar cells

ASJC Scopus subject areas

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

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10.1016/j.jcrysgro.2008.09.189

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title = "MBE growth of II-VI materials on GaSb substrates for photovoltaic applications",

abstract = "The II-VI materials lattice matched to GaSb substrates are desirable for ultrahigh-efficiency multijunction solar cells. This paper reports the growth of ZnTe and ZnCdTe/ZnTe quantum wells on undoped GaSb (1 0 0) substrates using molecular beam epitaxy. During growth, in situ reflection high-energy electron diffraction shows fast and smooth transition from GaSb surface to ZnTe surface. Post-growth structural characterization using X-ray diffraction and high-resolution transmission electron microscopy reveals very low-defect density, i.e. high crystalline quality. Visible photoluminescence is observed from 10 to 300 K.",

keywords = "A1. X-ray diffraction, A3. Molecular beam epitaxy, B2. Semiconducting II-VI materials, B3. Solar cells",

author = "S. Wang and D. Ding and X. Liu and Zhang, {X. B.} and David Smith and Furdyna, {J. K.} and Yong-Hang Zhang",

note = "Funding Information: The authors gratefully acknowledge the use of facilities in the John M. Cowley Center for High-Resolution Electron Microscopy, the Center for Solid State Electronics Research, and the LeRoy Eyring Center for Solid State Science at Arizona State University. This work is supported by the Science Foundation Arizona with Contract no. SRG 0190-07. ",

year = "2009",

month = mar,

day = "15",

doi = "10.1016/j.jcrysgro.2008.09.189",

language = "English (US)",

volume = "311",

pages = "2116--2119",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier",

number = "7",

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TY - JOUR

T1 - MBE growth of II-VI materials on GaSb substrates for photovoltaic applications

AU - Wang, S.

AU - Ding, D.

AU - Liu, X.

AU - Zhang, X. B.

AU - Smith, David

AU - Furdyna, J. K.

AU - Zhang, Yong-Hang

N1 - Funding Information: The authors gratefully acknowledge the use of facilities in the John M. Cowley Center for High-Resolution Electron Microscopy, the Center for Solid State Electronics Research, and the LeRoy Eyring Center for Solid State Science at Arizona State University. This work is supported by the Science Foundation Arizona with Contract no. SRG 0190-07.

PY - 2009/3/15

Y1 - 2009/3/15

N2 - The II-VI materials lattice matched to GaSb substrates are desirable for ultrahigh-efficiency multijunction solar cells. This paper reports the growth of ZnTe and ZnCdTe/ZnTe quantum wells on undoped GaSb (1 0 0) substrates using molecular beam epitaxy. During growth, in situ reflection high-energy electron diffraction shows fast and smooth transition from GaSb surface to ZnTe surface. Post-growth structural characterization using X-ray diffraction and high-resolution transmission electron microscopy reveals very low-defect density, i.e. high crystalline quality. Visible photoluminescence is observed from 10 to 300 K.

AB - The II-VI materials lattice matched to GaSb substrates are desirable for ultrahigh-efficiency multijunction solar cells. This paper reports the growth of ZnTe and ZnCdTe/ZnTe quantum wells on undoped GaSb (1 0 0) substrates using molecular beam epitaxy. During growth, in situ reflection high-energy electron diffraction shows fast and smooth transition from GaSb surface to ZnTe surface. Post-growth structural characterization using X-ray diffraction and high-resolution transmission electron microscopy reveals very low-defect density, i.e. high crystalline quality. Visible photoluminescence is observed from 10 to 300 K.

KW - A1. X-ray diffraction

KW - A3. Molecular beam epitaxy

KW - B2. Semiconducting II-VI materials

KW - B3. Solar cells

UR - http://www.scopus.com/inward/record.url?scp=63349091177&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=63349091177&partnerID=8YFLogxK

U2 - 10.1016/j.jcrysgro.2008.09.189

DO - 10.1016/j.jcrysgro.2008.09.189

M3 - Article

AN - SCOPUS:63349091177

SN - 0022-0248

VL - 311

SP - 2116

EP - 2119

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 7

ER -

MBE growth of II-VI materials on GaSb substrates for photovoltaic applications

Abstract

Keywords

ASJC Scopus subject areas

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