Abstract

The II-VI materials lattice matched to GaSb substrates are desirable for ultrahigh-efficiency multijunction solar cells. This paper reports the growth of ZnTe and ZnCdTe/ZnTe quantum wells on undoped GaSb (1 0 0) substrates using molecular beam epitaxy. During growth, in situ reflection high-energy electron diffraction shows fast and smooth transition from GaSb surface to ZnTe surface. Post-growth structural characterization using X-ray diffraction and high-resolution transmission electron microscopy reveals very low-defect density, i.e. high crystalline quality. Visible photoluminescence is observed from 10 to 300 K.

Original languageEnglish (US)
Pages (from-to)2116-2119
Number of pages4
JournalJournal of Crystal Growth
Volume311
Issue number7
DOIs
StatePublished - Mar 15 2009

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Keywords

  • A1. X-ray diffraction
  • A3. Molecular beam epitaxy
  • B2. Semiconducting II-VI materials
  • B3. Solar cells

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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