MBE growth and characterization of high-mobility InAs quantum-well systems for application in spintronics

Yu G. Sadofyev; Yu Cao; A. Ramamoorthy; B. Naser; J. P. Bird; Shane Johnson; Yong-Hang Zhang

doi:10.1109/MBE.2002.1037918

MBE growth and characterization of high-mobility InAs quantum-well systems for application in spintronics

Yu G. Sadofyev, Yu Cao, A. Ramamoorthy, B. Naser, J. P. Bird, Shane Johnson, Yong-Hang Zhang

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

The InAs/Al(Ga)Sb quantum-well (QW) system offers a range of possibilities for application in the emerging field of spintronics. For this reason, InAs has been proposed as one of the ideal systems for realizing a novel spin-filter device structure, which exploits spin-dependent tunneling through a magnetic, quantum-point-contact, barrier.

Original language	English (US)
Title of host publication	MBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	379-380
Number of pages	2
ISBN (Electronic)	0780375815, 9780780375819
DOIs	https://doi.org/10.1109/MBE.2002.1037918
State	Published - 2002
Event	12th International Conference on Molecular Beam Epitaxy, MBE 2002 - San Francisco, United States Duration: Sep 15 2002 → Sep 20 2002

Other

Other	12th International Conference on Molecular Beam Epitaxy, MBE 2002
Country/Territory	United States
City	San Francisco
Period	9/15/02 → 9/20/02

ASJC Scopus subject areas

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials
Materials Chemistry

Access to Document

10.1109/MBE.2002.1037918

Cite this

Sadofyev, Y. G., Cao, Y., Ramamoorthy, A., Naser, B., Bird, J. P., Johnson, S., & Zhang, Y.-H. (2002). MBE growth and characterization of high-mobility InAs quantum-well systems for application in spintronics. In MBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy (pp. 379-380). Article 1037918 Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/MBE.2002.1037918

MBE growth and characterization of high-mobility InAs quantum-well systems for application in spintronics. / Sadofyev, Yu G.; Cao, Yu; Ramamoorthy, A. et al.
MBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy. Institute of Electrical and Electronics Engineers Inc., 2002. p. 379-380 1037918.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Sadofyev, YG, Cao, Y, Ramamoorthy, A, Naser, B, Bird, JP, Johnson, S & Zhang, Y-H 2002, MBE growth and characterization of high-mobility InAs quantum-well systems for application in spintronics. in MBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy., 1037918, Institute of Electrical and Electronics Engineers Inc., pp. 379-380, 12th International Conference on Molecular Beam Epitaxy, MBE 2002, San Francisco, United States, 9/15/02. https://doi.org/10.1109/MBE.2002.1037918

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abstract = "The InAs/Al(Ga)Sb quantum-well (QW) system offers a range of possibilities for application in the emerging field of spintronics. For this reason, InAs has been proposed as one of the ideal systems for realizing a novel spin-filter device structure, which exploits spin-dependent tunneling through a magnetic, quantum-point-contact, barrier.",

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MBE growth and characterization of high-mobility InAs quantum-well systems for application in spintronics

Abstract

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