MBE growth and characterization of high-mobility InAs quantum-well systems for application in spintronics

Yu G. Sadofyev, Yu Cao, A. Ramamoorthy, B. Naser, J. P. Bird, Shane Johnson, Yong-Hang Zhang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The InAs/Al(Ga)Sb quantum-well (QW) system offers a range of possibilities for application in the emerging field of spintronics. For this reason, InAs has been proposed as one of the ideal systems for realizing a novel spin-filter device structure, which exploits spin-dependent tunneling through a magnetic, quantum-point-contact, barrier.

Original languageEnglish (US)
Title of host publicationMBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages379-380
Number of pages2
ISBN (Electronic)0780375815, 9780780375819
DOIs
StatePublished - 2002
Event12th International Conference on Molecular Beam Epitaxy, MBE 2002 - San Francisco, United States
Duration: Sep 15 2002Sep 20 2002

Other

Other12th International Conference on Molecular Beam Epitaxy, MBE 2002
CountryUnited States
CitySan Francisco
Period9/15/029/20/02

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry

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  • Cite this

    Sadofyev, Y. G., Cao, Y., Ramamoorthy, A., Naser, B., Bird, J. P., Johnson, S., & Zhang, Y-H. (2002). MBE growth and characterization of high-mobility InAs quantum-well systems for application in spintronics. In MBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy (pp. 379-380). [1037918] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/MBE.2002.1037918