Magnetotransport of single crystalline YSb

N. J. Ghimire, A. S. Botana, D. Phelan, H. Zheng, J. F. Mitchell

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Abstract

We report magnetic field dependent transport measurements on a single crystal of cubic YSb together with first principles calculations of its electronic structure. The transverse magnetoresistance does not saturate up to 9 T and attains a value of 75 000% at 1.8 K. The Hall coefficient is electron-like at high temperature, changes sign to hole-like between 110 and 50 K, and again becomes electron-like below 50 K. First principles calculations show that YSb is a compensated semimetal with a qualitatively similar electronic structure to that of isostructural LaSb and LaBi, but with larger Fermi surface volume. The measured electron carrier density and Hall mobility calculated at 1.8 K, based on a single band approximation, are 6.5 × 1020 cm-3 and 6.2 × 104 cm2 Vs-1, respectively. These values are comparable with those reported for LaBi and LaSb. Like LaBi and LaSb, YSb undergoes a magnetic fieldinduced metal-insulator-like transition below a characteristic temperature Tm, with resistivity saturation below 13 K. Thickness dependent electrical resistance measurements show a deviation of the resistance behavior from that expected for a normal metal; however, they do not unambiguously establish surface conduction as the mechanism for the resistivity plateau.

Original languageEnglish (US)
Article number235601
JournalJournal of Physics Condensed Matter
Volume28
Issue number23
DOIs
StatePublished - May 10 2016
Externally publishedYes

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Keywords

  • Dirac semimetal
  • surface states
  • topologial insulator
  • Weyl semimetal

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics

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