Lumped-Element Modeling of Millimeter-Wave HEMT Parasitics via Full-Wave Electromagnetic Analysis

Yasir Karisan; Cosan Caglayan; Georgios Trichopoulos; Kubilay Sertel

doi:10.1109/CSICS.2015.7314514

Lumped-Element Modeling of Millimeter-Wave HEMT Parasitics via Full-Wave Electromagnetic Analysis

Yasir Karisan, Cosan Caglayan, Georgios Trichopoulos, Kubilay Sertel

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Scopus citations

Abstract

We present a broadband lumped-element parasitic equivalent circuit extraction procedure based on full-wave modeling of electromagnetic interactions within the pad layout of millimeter-wave (mmW) high electron mobility transistors (HEMTs). The proposed method is illustrated using a conventional two-finger HEMT topology within a coplanar waveguide environment. The accuracy of the suggested extraction procedure is validated through extensive comparisons between full-wave electromagnetic simulations, measured data, and the computed response of the proposed model up to 325 GHz. Using the proposed approach, we are also illustrating the impact of the gate-to-drain mutual inductance introduced in the conventional small signal equivalent circuit. Subsequently, we apply our new approach to differential configurations.

Original language	English (US)
Title of host publication	2015 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2015
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Print)	9781479984947
DOIs	https://doi.org/10.1109/CSICS.2015.7314514
State	Published - Oct 30 2015
Externally published	Yes
Event	37th IEEE International Symposium on Workload Characterization, IISWC 2015 - New Orleans, United States Duration: Oct 11 2015 → Oct 14 2015

Other

Other	37th IEEE International Symposium on Workload Characterization, IISWC 2015
Country/Territory	United States
City	New Orleans
Period	10/11/15 → 10/14/15

Keywords

electromagnetic coupling
HEMT
lumped-element parasitic equivalent circuit model
parameter extraction

ASJC Scopus subject areas

Electrical and Electronic Engineering
Computer Networks and Communications
Electronic, Optical and Magnetic Materials

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10.1109/CSICS.2015.7314514

Cite this

Lumped-Element Modeling of Millimeter-Wave HEMT Parasitics via Full-Wave Electromagnetic Analysis. / Karisan, Yasir; Caglayan, Cosan; Trichopoulos, Georgios et al.
2015 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2015. Institute of Electrical and Electronics Engineers Inc., 2015. 7314514.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Karisan, Y, Caglayan, C, Trichopoulos, G & Sertel, K 2015, Lumped-Element Modeling of Millimeter-Wave HEMT Parasitics via Full-Wave Electromagnetic Analysis. in 2015 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2015., 7314514, Institute of Electrical and Electronics Engineers Inc., 37th IEEE International Symposium on Workload Characterization, IISWC 2015, New Orleans, United States, 10/11/15. https://doi.org/10.1109/CSICS.2015.7314514

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title = "Lumped-Element Modeling of Millimeter-Wave HEMT Parasitics via Full-Wave Electromagnetic Analysis",

abstract = "We present a broadband lumped-element parasitic equivalent circuit extraction procedure based on full-wave modeling of electromagnetic interactions within the pad layout of millimeter-wave (mmW) high electron mobility transistors (HEMTs). The proposed method is illustrated using a conventional two-finger HEMT topology within a coplanar waveguide environment. The accuracy of the suggested extraction procedure is validated through extensive comparisons between full-wave electromagnetic simulations, measured data, and the computed response of the proposed model up to 325 GHz. Using the proposed approach, we are also illustrating the impact of the gate-to-drain mutual inductance introduced in the conventional small signal equivalent circuit. Subsequently, we apply our new approach to differential configurations.",

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AU - Karisan, Yasir

AU - Caglayan, Cosan

AU - Trichopoulos, Georgios

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PY - 2015/10/30

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N2 - We present a broadband lumped-element parasitic equivalent circuit extraction procedure based on full-wave modeling of electromagnetic interactions within the pad layout of millimeter-wave (mmW) high electron mobility transistors (HEMTs). The proposed method is illustrated using a conventional two-finger HEMT topology within a coplanar waveguide environment. The accuracy of the suggested extraction procedure is validated through extensive comparisons between full-wave electromagnetic simulations, measured data, and the computed response of the proposed model up to 325 GHz. Using the proposed approach, we are also illustrating the impact of the gate-to-drain mutual inductance introduced in the conventional small signal equivalent circuit. Subsequently, we apply our new approach to differential configurations.

AB - We present a broadband lumped-element parasitic equivalent circuit extraction procedure based on full-wave modeling of electromagnetic interactions within the pad layout of millimeter-wave (mmW) high electron mobility transistors (HEMTs). The proposed method is illustrated using a conventional two-finger HEMT topology within a coplanar waveguide environment. The accuracy of the suggested extraction procedure is validated through extensive comparisons between full-wave electromagnetic simulations, measured data, and the computed response of the proposed model up to 325 GHz. Using the proposed approach, we are also illustrating the impact of the gate-to-drain mutual inductance introduced in the conventional small signal equivalent circuit. Subsequently, we apply our new approach to differential configurations.

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KW - lumped-element parasitic equivalent circuit model

KW - parameter extraction

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BT - 2015 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2015

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Lumped-Element Modeling of Millimeter-Wave HEMT Parasitics via Full-Wave Electromagnetic Analysis

Abstract

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Keywords

ASJC Scopus subject areas

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