Lumped-Element Modeling of Millimeter-Wave HEMT Parasitics via Full-Wave Electromagnetic Analysis

Yasir Karisan, Cosan Caglayan, Georgios Trichopoulos, Kubilay Sertel

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

We present a broadband lumped-element parasitic equivalent circuit extraction procedure based on full-wave modeling of electromagnetic interactions within the pad layout of millimeter-wave (mmW) high electron mobility transistors (HEMTs). The proposed method is illustrated using a conventional two-finger HEMT topology within a coplanar waveguide environment. The accuracy of the suggested extraction procedure is validated through extensive comparisons between full-wave electromagnetic simulations, measured data, and the computed response of the proposed model up to 325 GHz. Using the proposed approach, we are also illustrating the impact of the gate-to-drain mutual inductance introduced in the conventional small signal equivalent circuit. Subsequently, we apply our new approach to differential configurations.

Original languageEnglish (US)
Title of host publication2015 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2015
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Print)9781479984947
DOIs
StatePublished - Oct 30 2015
Externally publishedYes
Event37th IEEE International Symposium on Workload Characterization, IISWC 2015 - New Orleans, United States
Duration: Oct 11 2015Oct 14 2015

Other

Other37th IEEE International Symposium on Workload Characterization, IISWC 2015
CountryUnited States
CityNew Orleans
Period10/11/1510/14/15

Keywords

  • electromagnetic coupling
  • HEMT
  • lumped-element parasitic equivalent circuit model
  • parameter extraction

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Computer Networks and Communications
  • Electronic, Optical and Magnetic Materials

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    Karisan, Y., Caglayan, C., Trichopoulos, G., & Sertel, K. (2015). Lumped-Element Modeling of Millimeter-Wave HEMT Parasitics via Full-Wave Electromagnetic Analysis. In 2015 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2015 [7314514] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/CSICS.2015.7314514