Lumped-Element Equivalent-Circuit Modeling of Millimeter-Wave HEMT Parasitics Through Full-Wave Electromagnetic Analysis

Yasir Karisan, Cosan Caglayan, Georgios Trichopoulos, Kubilay Sertel

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

We present a broadband lumped-element parasitic equivalent circuit to accurately capture the frequency response of electromagnetic (EM) interactions inside the structure and surrounding environment of high electron-mobility transistors (HEMTs). A new mutual inductance term is included to account for the high-frequency magnetic field coupling between device electrodes. An analytical method is also proposed, for the first time, to extract the gate-to-drain mutual inductance LMGD, which creates an undesirable inductive feedback path from output to input at millimeter wavelengths. Based on the suggested extrinsic equivalent circuit, we propose a novel multi-step parameter extraction procedure that utilizes direct analytic extraction and linear regression techniques systematically to determine the parasitic component values. The accuracy and robustness of the presented extraction algorithm are established via comprehensive comparisons between EM simulations, measurements, and frequency responses of the suggested equivalent circuits up to and beyond 300 GHz in the millimeter-wave (mmW) band. The key parasitic elements that are most detrimental to the microwave performance are identified and optimized through subsequent circuit analysis. Design guidelines are provided for optimum device layout selection to achieve the highest frequency performance. It is demonstrated through a full-wave simulation based parametric study that around 20% improvement in maximum oscillation frequency is achievable via optimization of device gate finger number and unit finger width.

Original languageEnglish (US)
JournalIEEE Transactions on Microwave Theory and Techniques
DOIs
StateAccepted/In press - Apr 20 2016

Fingerprint

High electron mobility transistors
high electron mobility transistors
equivalent circuits
Millimeter waves
Equivalent circuits
Electromagnetic waves
millimeter waves
electromagnetic radiation
inductance
Inductance
frequency response
Frequency response
Parameter extraction
electromagnetic interactions
Electric network analysis
Linear regression
layouts
regression analysis
simulation
Microwaves

ASJC Scopus subject areas

  • Radiation
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

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title = "Lumped-Element Equivalent-Circuit Modeling of Millimeter-Wave HEMT Parasitics Through Full-Wave Electromagnetic Analysis",
abstract = "We present a broadband lumped-element parasitic equivalent circuit to accurately capture the frequency response of electromagnetic (EM) interactions inside the structure and surrounding environment of high electron-mobility transistors (HEMTs). A new mutual inductance term is included to account for the high-frequency magnetic field coupling between device electrodes. An analytical method is also proposed, for the first time, to extract the gate-to-drain mutual inductance LMGD, which creates an undesirable inductive feedback path from output to input at millimeter wavelengths. Based on the suggested extrinsic equivalent circuit, we propose a novel multi-step parameter extraction procedure that utilizes direct analytic extraction and linear regression techniques systematically to determine the parasitic component values. The accuracy and robustness of the presented extraction algorithm are established via comprehensive comparisons between EM simulations, measurements, and frequency responses of the suggested equivalent circuits up to and beyond 300 GHz in the millimeter-wave (mmW) band. The key parasitic elements that are most detrimental to the microwave performance are identified and optimized through subsequent circuit analysis. Design guidelines are provided for optimum device layout selection to achieve the highest frequency performance. It is demonstrated through a full-wave simulation based parametric study that around 20{\%} improvement in maximum oscillation frequency is achievable via optimization of device gate finger number and unit finger width.",
author = "Yasir Karisan and Cosan Caglayan and Georgios Trichopoulos and Kubilay Sertel",
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