Low-voltage and ultra-low-voltage scanning electron microscopy of semiconductor surfaces and devices

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

Low-voltage scanning electron microscopy (LV-SEM) enables us to directly examine non-conducting materials with high spatial resolution. Although use of ultra-low-energy electrons can provide further advantages for characterizing delicate samples, lens aberrations rapidly deteriorates the image resolution. The combined use of a retarding field and the probe-forming lens system can improve the image resolution for electrons with very low energies. In commercially available FEG-SEMs, the retarding field can simply be constructed by applying a negative potential to the specimen. Interesting contrast variations have been observed in ultra-low-voltage SEM images. In this short communication, we discuss the application of LV-SEM to examining semiconductor devices and also the recent development of the ultra-low-voltage SEM technique.

Original languageEnglish (US)
Pages (from-to)4387-4394
Number of pages8
JournalInternational Journal of Modern Physics B
Volume16
Issue number28-29
StatePublished - Nov 20 2002
Externally publishedYes

Fingerprint

Low Voltage
Scanning Electron Microscopy
low voltage
Semiconductors
Semiconductor materials
Scanning electron microscopy
scanning electron microscopy
Electric potential
Lens
image resolution
Image resolution
Electron
Lenses
lenses
retarding
Semiconductor Devices
Energy
Aberration
Spatial Resolution
Electrons

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Mathematical Physics
  • Physics and Astronomy (miscellaneous)
  • Condensed Matter Physics
  • Statistical and Nonlinear Physics

Cite this

Low-voltage and ultra-low-voltage scanning electron microscopy of semiconductor surfaces and devices. / Liu, Jingyue.

In: International Journal of Modern Physics B, Vol. 16, No. 28-29, 20.11.2002, p. 4387-4394.

Research output: Contribution to journalArticle

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