Abstract

Variable frequency microwaves (VFM) and rapid thermal annealing (RTA) were used to activate ion implanted dopants and re-grow implant-damaged silicon. Four-point-probe measurements were used to determine the extent of dopant activation and revealed comparable resistivities for 30 seconds of RTA annealing at 900 °C and 6-9 minutes of VFM annealing at 540 °C. Ion channeling analysis spectra revealed that microwave heating removes the Si damage that results from arsenic ion implantation to an extent comparable to RTA. Cross-section transmission electron microscopy demonstrates that the silicon lattice regains nearly all of its crystallinity after microwave processing of arsenic implanted silicon. Secondary ion mass spectroscopy reveals limited diffusion of dopants in VFM processed samples when compared to rapid thermal annealing. Our results establish that VFM is an effective means of low-temperature dopant activation in ion-implanted Si.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposium Proceedings
Pages331-336
Number of pages6
Volume1245
StatePublished - 2010
Event2010 MRS Spring Meeting - San Francisco, CA, United States
Duration: Apr 5 2010Apr 9 2010

Other

Other2010 MRS Spring Meeting
CountryUnited States
CitySan Francisco, CA
Period4/5/104/9/10

Fingerprint

Rapid thermal annealing
Microwave frequencies
microwave frequencies
Silicon
Chemical activation
Doping (additives)
activation
Annealing
Ions
annealing
Arsenic
arsenic
Temperature
Regain
Microwave heating
ions
silicon
Ion implantation
Spectrum analysis
microwaves

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering
  • Mechanics of Materials

Cite this

Alford, T., Sivaramakrishnan, K., Indium, A., Ahmad, I., Hubbard, R., & Theodore, N. D. (2010). Low temperature dopant activation using variable frequency microwave annealing. In Materials Research Society Symposium Proceedings (Vol. 1245, pp. 331-336)

Low temperature dopant activation using variable frequency microwave annealing. / Alford, Terry; Sivaramakrishnan, K.; Indium, A.; Ahmad, Iftikhar; Hubbard, R.; Theodore, N. D.

Materials Research Society Symposium Proceedings. Vol. 1245 2010. p. 331-336.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Alford, T, Sivaramakrishnan, K, Indium, A, Ahmad, I, Hubbard, R & Theodore, ND 2010, Low temperature dopant activation using variable frequency microwave annealing. in Materials Research Society Symposium Proceedings. vol. 1245, pp. 331-336, 2010 MRS Spring Meeting, San Francisco, CA, United States, 4/5/10.
Alford T, Sivaramakrishnan K, Indium A, Ahmad I, Hubbard R, Theodore ND. Low temperature dopant activation using variable frequency microwave annealing. In Materials Research Society Symposium Proceedings. Vol. 1245. 2010. p. 331-336
Alford, Terry ; Sivaramakrishnan, K. ; Indium, A. ; Ahmad, Iftikhar ; Hubbard, R. ; Theodore, N. D. / Low temperature dopant activation using variable frequency microwave annealing. Materials Research Society Symposium Proceedings. Vol. 1245 2010. pp. 331-336
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