Low Schottky barriers on n-type silicon (001)

Meng Tao, Shruddha Agarwal, Darshak Udeshi, Nasir Basit, Eduardo Maldonado, Wiley P. Kirk

Research output: Contribution to journalArticle

70 Scopus citations

Abstract

A study was performed on low Schottky barriers on n-type silicon (001). No metal showed a Schottky barrier of less than 0.4 eV on n-type silicon (001). It was found that low Schottky barriers can be obtained on n-type silicon (001) by terminating dangling bonds and relaxing strained bonds on the silicon (001) surface with a monolayer of selenium.

Original languageEnglish (US)
Pages (from-to)2593-2595
Number of pages3
JournalApplied Physics Letters
Volume83
Issue number13
DOIs
StatePublished - Sep 29 2003
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Fingerprint Dive into the research topics of 'Low Schottky barriers on n-type silicon (001)'. Together they form a unique fingerprint.

  • Cite this

    Tao, M., Agarwal, S., Udeshi, D., Basit, N., Maldonado, E., & Kirk, W. P. (2003). Low Schottky barriers on n-type silicon (001). Applied Physics Letters, 83(13), 2593-2595. https://doi.org/10.1063/1.1613357