Low Schottky barriers on n-type silicon (001)

Meng Tao; Shruddha Agarwal; Darshak Udeshi; Nasir Basit; Eduardo Maldonado; Wiley P. Kirk

doi:10.1063/1.1613357

Low Schottky barriers on n-type silicon (001)

Meng Tao, Shruddha Agarwal, Darshak Udeshi, Nasir Basit, Eduardo Maldonado, Wiley P. Kirk

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Abstract

A study was performed on low Schottky barriers on n-type silicon (001). No metal showed a Schottky barrier of less than 0.4 eV on n-type silicon (001). It was found that low Schottky barriers can be obtained on n-type silicon (001) by terminating dangling bonds and relaxing strained bonds on the silicon (001) surface with a monolayer of selenium.

Original language	English (US)
Pages (from-to)	2593-2595
Number of pages	3
Journal	Applied Physics Letters
Volume	83
Issue number	13
DOIs	https://doi.org/10.1063/1.1613357
State	Published - Sep 29 2003
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.1613357

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abstract = "A study was performed on low Schottky barriers on n-type silicon (001). No metal showed a Schottky barrier of less than 0.4 eV on n-type silicon (001). It was found that low Schottky barriers can be obtained on n-type silicon (001) by terminating dangling bonds and relaxing strained bonds on the silicon (001) surface with a monolayer of selenium.",

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AU - Udeshi, Darshak

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AU - Maldonado, Eduardo

AU - Kirk, Wiley P.

PY - 2003/9/29

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AB - A study was performed on low Schottky barriers on n-type silicon (001). No metal showed a Schottky barrier of less than 0.4 eV on n-type silicon (001). It was found that low Schottky barriers can be obtained on n-type silicon (001) by terminating dangling bonds and relaxing strained bonds on the silicon (001) surface with a monolayer of selenium.

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Low Schottky barriers on n-type silicon (001)

Abstract

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