A study was performed on low Schottky barriers on n-type silicon (001). No metal showed a Schottky barrier of less than 0.4 eV on n-type silicon (001). It was found that low Schottky barriers can be obtained on n-type silicon (001) by terminating dangling bonds and relaxing strained bonds on the silicon (001) surface with a monolayer of selenium.
|Original language||English (US)|
|Number of pages||3|
|Journal||Applied Physics Letters|
|State||Published - Sep 29 2003|
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)