Low Schottky barriers on n-type silicon (001)

Meng Tao, Shruddha Agarwal, Darshak Udeshi, Nasir Basit, Eduardo Maldonado, Wiley P. Kirk

Research output: Contribution to journalArticlepeer-review

70 Scopus citations

Abstract

A study was performed on low Schottky barriers on n-type silicon (001). No metal showed a Schottky barrier of less than 0.4 eV on n-type silicon (001). It was found that low Schottky barriers can be obtained on n-type silicon (001) by terminating dangling bonds and relaxing strained bonds on the silicon (001) surface with a monolayer of selenium.

Original languageEnglish (US)
Pages (from-to)2593-2595
Number of pages3
JournalApplied Physics Letters
Volume83
Issue number13
DOIs
StatePublished - Sep 29 2003

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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