Long-wave infrared nBn photodetectors based on InAs/InAsSb type-II superlattices

H. S. Kim, O. O. Cellek, Zhi Yuan Lin, Zhao Yu He, Xin Hao Zhao, Shi Liu, H. Li, Yong-Hang Zhang

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102 Scopus citations

Abstract

Long-wave infrared InAs/InAsSb type-II superlattice nBn photodetectors are demonstrated on GaSb substrates. The typical device consists of a 2.2 μm thick absorber layer and has a 50 cutoff wavelength of 13.2 μm, a measured dark current density of 5 × 10 -4 A/cm 2 at 77 K under a bias of -0.3 V, a peak responsivity of 0.24 A/W at 12 μm, and a maximum resistance-area product of 300 cm 2 at 77 K. The calculated generation-recombination noise limited specific detectivity (D) and experimentally measured D at 12 μm and 77 K are 1 × 10 10 cm Hz 1/2/W and 1 × 10 8 cm Hz 1/2/W, respectively.

Original languageEnglish (US)
Article number161114
JournalApplied Physics Letters
Volume101
Issue number16
DOIs
StatePublished - Oct 15 2012

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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