Long-wave infrared nBn photodetectors based on InAs/InAsSb type-II superlattices

H. S. Kim; O. O. Cellek; Zhi Yuan Lin; Zhao Yu He; Xin Hao Zhao; Shi Liu; H. Li; Yong-Hang Zhang

doi:10.1063/1.4760260

Long-wave infrared nBn photodetectors based on InAs/InAsSb type-II superlattices

H. S. Kim, O. O. Cellek, Zhi Yuan Lin, Zhao Yu He, Xin Hao Zhao, Shi Liu, H. Li, Yong-Hang Zhang

Research output: Contribution to journal › Article › peer-review

135 Scopus citations

Abstract

Long-wave infrared InAs/InAsSb type-II superlattice nBn photodetectors are demonstrated on GaSb substrates. The typical device consists of a 2.2 μm thick absorber layer and has a 50 cutoff wavelength of 13.2 μm, a measured dark current density of 5 × 10 ^-4 A/cm ² at 77 K under a bias of -0.3 V, a peak responsivity of 0.24 A/W at 12 μm, and a maximum resistance-area product of 300 cm ² at 77 K. The calculated generation-recombination noise limited specific detectivity (D) and experimentally measured D at 12 μm and 77 K are 1 × 10 ¹⁰ cm Hz ^1/2/W and 1 × 10 ⁸ cm Hz ^1/2/W, respectively.

Original language	English (US)
Article number	161114
Journal	Applied Physics Letters
Volume	101
Issue number	16
DOIs	https://doi.org/10.1063/1.4760260
State	Published - Oct 15 2012

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.4760260

Cite this

@article{81c2290aab174c3b8a1db865af30a320,

title = "Long-wave infrared nBn photodetectors based on InAs/InAsSb type-II superlattices",

abstract = "Long-wave infrared InAs/InAsSb type-II superlattice nBn photodetectors are demonstrated on GaSb substrates. The typical device consists of a 2.2 μm thick absorber layer and has a 50 cutoff wavelength of 13.2 μm, a measured dark current density of 5 × 10 -4 A/cm 2 at 77 K under a bias of -0.3 V, a peak responsivity of 0.24 A/W at 12 μm, and a maximum resistance-area product of 300 cm 2 at 77 K. The calculated generation-recombination noise limited specific detectivity (D) and experimentally measured D at 12 μm and 77 K are 1 × 10 10 cm Hz 1/2/W and 1 × 10 8 cm Hz 1/2/W, respectively.",

author = "Kim, {H. S.} and Cellek, {O. O.} and Lin, {Zhi Yuan} and He, {Zhao Yu} and Zhao, {Xin Hao} and Shi Liu and H. Li and Yong-Hang Zhang",

note = "Funding Information: The authors acknowledge funding by the AFOSR under Grant No. FA9550-10-1-0129 and U.S. Army Research Office MURI program under Grant No. W911NF-10-1-0524.",

year = "2012",

month = oct,

day = "15",

doi = "10.1063/1.4760260",

language = "English (US)",

volume = "101",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "16",

}

TY - JOUR

T1 - Long-wave infrared nBn photodetectors based on InAs/InAsSb type-II superlattices

AU - Kim, H. S.

AU - Cellek, O. O.

AU - Lin, Zhi Yuan

AU - He, Zhao Yu

AU - Zhao, Xin Hao

AU - Liu, Shi

AU - Li, H.

AU - Zhang, Yong-Hang

N1 - Funding Information: The authors acknowledge funding by the AFOSR under Grant No. FA9550-10-1-0129 and U.S. Army Research Office MURI program under Grant No. W911NF-10-1-0524.

PY - 2012/10/15

Y1 - 2012/10/15

N2 - Long-wave infrared InAs/InAsSb type-II superlattice nBn photodetectors are demonstrated on GaSb substrates. The typical device consists of a 2.2 μm thick absorber layer and has a 50 cutoff wavelength of 13.2 μm, a measured dark current density of 5 × 10 -4 A/cm 2 at 77 K under a bias of -0.3 V, a peak responsivity of 0.24 A/W at 12 μm, and a maximum resistance-area product of 300 cm 2 at 77 K. The calculated generation-recombination noise limited specific detectivity (D) and experimentally measured D at 12 μm and 77 K are 1 × 10 10 cm Hz 1/2/W and 1 × 10 8 cm Hz 1/2/W, respectively.

AB - Long-wave infrared InAs/InAsSb type-II superlattice nBn photodetectors are demonstrated on GaSb substrates. The typical device consists of a 2.2 μm thick absorber layer and has a 50 cutoff wavelength of 13.2 μm, a measured dark current density of 5 × 10 -4 A/cm 2 at 77 K under a bias of -0.3 V, a peak responsivity of 0.24 A/W at 12 μm, and a maximum resistance-area product of 300 cm 2 at 77 K. The calculated generation-recombination noise limited specific detectivity (D) and experimentally measured D at 12 μm and 77 K are 1 × 10 10 cm Hz 1/2/W and 1 × 10 8 cm Hz 1/2/W, respectively.

UR - http://www.scopus.com/inward/record.url?scp=84867801478&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84867801478&partnerID=8YFLogxK

U2 - 10.1063/1.4760260

DO - 10.1063/1.4760260

M3 - Article

AN - SCOPUS:84867801478

SN - 0003-6951

VL - 101

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 16

M1 - 161114

ER -

Long-wave infrared nBn photodetectors based on InAs/InAsSb type-II superlattices

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this