Abstract

Long-wave infrared InAs/InAsSb type-II superlattice nBn photodetectors are demonstrated on GaSb substrates. The typical device consists of a 2.2 μm thick absorber layer and has a 50 cutoff wavelength of 13.2 μm, a measured dark current density of 5 × 10 -4 A/cm 2 at 77 K under a bias of -0.3 V, a peak responsivity of 0.24 A/W at 12 μm, and a maximum resistance-area product of 300 cm 2 at 77 K. The calculated generation-recombination noise limited specific detectivity (D) and experimentally measured D at 12 μm and 77 K are 1 × 10 10 cm Hz 1/2/W and 1 × 10 8 cm Hz 1/2/W, respectively.

Original languageEnglish (US)
Article number161114
JournalApplied Physics Letters
Volume101
Issue number16
DOIs
StatePublished - Oct 15 2012

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dark current
planetary waves
photometers
superlattices
absorbers
cut-off
current density
products
wavelengths

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Kim, H. S., Cellek, O. O., Lin, Z. Y., He, Z. Y., Zhao, X. H., Liu, S., ... Zhang, Y-H. (2012). Long-wave infrared nBn photodetectors based on InAs/InAsSb type-II superlattices. Applied Physics Letters, 101(16), [161114]. https://doi.org/10.1063/1.4760260

Long-wave infrared nBn photodetectors based on InAs/InAsSb type-II superlattices. / Kim, H. S.; Cellek, O. O.; Lin, Zhi Yuan; He, Zhao Yu; Zhao, Xin Hao; Liu, Shi; Li, H.; Zhang, Yong-Hang.

In: Applied Physics Letters, Vol. 101, No. 16, 161114, 15.10.2012.

Research output: Contribution to journalArticle

Kim, HS, Cellek, OO, Lin, ZY, He, ZY, Zhao, XH, Liu, S, Li, H & Zhang, Y-H 2012, 'Long-wave infrared nBn photodetectors based on InAs/InAsSb type-II superlattices', Applied Physics Letters, vol. 101, no. 16, 161114. https://doi.org/10.1063/1.4760260
Kim, H. S. ; Cellek, O. O. ; Lin, Zhi Yuan ; He, Zhao Yu ; Zhao, Xin Hao ; Liu, Shi ; Li, H. ; Zhang, Yong-Hang. / Long-wave infrared nBn photodetectors based on InAs/InAsSb type-II superlattices. In: Applied Physics Letters. 2012 ; Vol. 101, No. 16.
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