91 Scopus citations


Long-wave infrared InAs/InAsSb type-II superlattice nBn photodetectors are demonstrated on GaSb substrates. The typical device consists of a 2.2 μm thick absorber layer and has a 50 cutoff wavelength of 13.2 μm, a measured dark current density of 5 × 10 -4 A/cm 2 at 77 K under a bias of -0.3 V, a peak responsivity of 0.24 A/W at 12 μm, and a maximum resistance-area product of 300 cm 2 at 77 K. The calculated generation-recombination noise limited specific detectivity (D) and experimentally measured D at 12 μm and 77 K are 1 × 10 10 cm Hz 1/2/W and 1 × 10 8 cm Hz 1/2/W, respectively.

Original languageEnglish (US)
Article number161114
JournalApplied Physics Letters
Issue number16
StatePublished - Oct 15 2012

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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    Kim, H. S., Cellek, O. O., Lin, Z. Y., He, Z. Y., Zhao, X. H., Liu, S., Li, H., & Zhang, Y-H. (2012). Long-wave infrared nBn photodetectors based on InAs/InAsSb type-II superlattices. Applied Physics Letters, 101(16), [161114]. https://doi.org/10.1063/1.4760260