Logarithm cofactor difference extrema method of mosfet's post-breakdown current and application to parameter extraction

Min Shi; Hongyu He; Guoan Zhang; Qin Chen; Cheng Wang; Jin He; Aixin Chen; Wen Wu; Yun Ye; Hailang Liang; Yu Cao; Wei Zhang; Ling Sun

doi:10.1166/jctn.2013.2753

Logarithm cofactor difference extrema method of mosfet's post-breakdown current and application to parameter extraction

Min Shi, Hongyu He, Guoan Zhang, Qin Chen, Cheng Wang, Jin He, Aixin Chen, Wen Wu, Yun Ye, Hailang Liang, Yu Cao, Wei Zhang, Ling Sun

Research output: Contribution to journal › Article › peer-review

Abstract

This paper proposed an advanced logarithm cofactor difference operator (LogCDO) method to extract parameters of the MOS devices' post-breakdown current. The experimental results of the post breakdown current at different temperature are used to validity the LogCDO method. The postbreakdown current of MOS device is first equivalent to a double diode circuit model, and then the improved LogCDO method is applied to extract key parameters. The extraction results are consistent very well with the measured data even over a wide range of temperature.

Original language	English (US)
Pages (from-to)	669-672
Number of pages	4
Journal	Journal of Computational and Theoretical Nanoscience
Volume	10
Issue number	3
DOIs	https://doi.org/10.1166/jctn.2013.2753
State	Published - Mar 2013
Externally published	Yes

Keywords

Logarithm cofactor difference extrema
MOS device
Parameter extraction
Post-breakdown current

ASJC Scopus subject areas

General Chemistry
General Materials Science
Condensed Matter Physics
Computational Mathematics
Electrical and Electronic Engineering

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10.1166/jctn.2013.2753

Cite this

@article{254e6a73ad124ed6bbcc6832a3a62407,

title = "Logarithm cofactor difference extrema method of mosfet's post-breakdown current and application to parameter extraction",

abstract = "This paper proposed an advanced logarithm cofactor difference operator (LogCDO) method to extract parameters of the MOS devices' post-breakdown current. The experimental results of the post breakdown current at different temperature are used to validity the LogCDO method. The postbreakdown current of MOS device is first equivalent to a double diode circuit model, and then the improved LogCDO method is applied to extract key parameters. The extraction results are consistent very well with the measured data even over a wide range of temperature.",

keywords = "Logarithm cofactor difference extrema, MOS device, Parameter extraction, Post-breakdown current",

author = "Min Shi and Hongyu He and Guoan Zhang and Qin Chen and Cheng Wang and Jin He and Aixin Chen and Wen Wu and Yun Ye and Hailang Liang and Yu Cao and Wei Zhang and Ling Sun",

year = "2013",

month = mar,

doi = "10.1166/jctn.2013.2753",

language = "English (US)",

volume = "10",

pages = "669--672",

journal = "Journal of Computational and Theoretical Nanoscience",

issn = "1546-1955",

publisher = "American Scientific Publishers",

number = "3",

}

TY - JOUR

T1 - Logarithm cofactor difference extrema method of mosfet's post-breakdown current and application to parameter extraction

AU - Shi, Min

AU - He, Hongyu

AU - Zhang, Guoan

AU - Chen, Qin

AU - Wang, Cheng

AU - He, Jin

AU - Chen, Aixin

AU - Wu, Wen

AU - Ye, Yun

AU - Liang, Hailang

AU - Cao, Yu

AU - Zhang, Wei

AU - Sun, Ling

PY - 2013/3

Y1 - 2013/3

N2 - This paper proposed an advanced logarithm cofactor difference operator (LogCDO) method to extract parameters of the MOS devices' post-breakdown current. The experimental results of the post breakdown current at different temperature are used to validity the LogCDO method. The postbreakdown current of MOS device is first equivalent to a double diode circuit model, and then the improved LogCDO method is applied to extract key parameters. The extraction results are consistent very well with the measured data even over a wide range of temperature.

AB - This paper proposed an advanced logarithm cofactor difference operator (LogCDO) method to extract parameters of the MOS devices' post-breakdown current. The experimental results of the post breakdown current at different temperature are used to validity the LogCDO method. The postbreakdown current of MOS device is first equivalent to a double diode circuit model, and then the improved LogCDO method is applied to extract key parameters. The extraction results are consistent very well with the measured data even over a wide range of temperature.

KW - Logarithm cofactor difference extrema

KW - MOS device

KW - Parameter extraction

KW - Post-breakdown current

UR - http://www.scopus.com/inward/record.url?scp=84876543277&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84876543277&partnerID=8YFLogxK

U2 - 10.1166/jctn.2013.2753

DO - 10.1166/jctn.2013.2753

M3 - Article

AN - SCOPUS:84876543277

SN - 1546-1955

VL - 10

SP - 669

EP - 672

JO - Journal of Computational and Theoretical Nanoscience

JF - Journal of Computational and Theoretical Nanoscience

IS - 3

ER -

Logarithm cofactor difference extrema method of mosfet's post-breakdown current and application to parameter extraction

Abstract

Keywords

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