Abstract

A novel approach to perform two-tone and modulated signal linearity analysis with TCAD device simulators is reported. The X-parameters of the simulated device are first extracted through one-tone large-signal coupled circuit-device simulations by exploiting, in our case, a coupled Harmonic Balance - TCAD Monte Carlo particle-based device simulator. Then, large signal linearity figures of merit such as two-tone intermodulation distortion and adjacent channel leakage ratio are obtained by a commercial Circuit Envelope simulator and the one-tone X-parameter compact model. In such a way, the TCAD simulation of a prohibitive number of RF cycles, due to the slowly varying envelope of the modulated carrier, is avoided.

Original languageEnglish (US)
Title of host publicationIEEE MTT-S International Microwave Symposium Digest
DOIs
StatePublished - 2013
Event2013 IEEE MTT-S International Microwave Symposium Digest, MTT 2013 - Seattle, WA, United States
Duration: Jun 2 2013Jun 7 2013

Other

Other2013 IEEE MTT-S International Microwave Symposium Digest, MTT 2013
CountryUnited States
CitySeattle, WA
Period6/2/136/7/13

Fingerprint

Wave power
Millimeter waves
millimeter waves
linearity
transistors
Simulators
simulators
Coupled circuits
Intermodulation distortion
envelopes
simulation
Signal analysis
intermodulation
figure of merit
leakage
Networks (circuits)
harmonics
cycles
Power transistors

Keywords

  • GaN HEMT
  • Intermodulation Distortion
  • Monte Carlo
  • Nonlinear Modeling
  • TCAD
  • X-parameters

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Radiation
  • Condensed Matter Physics

Cite this

Linearity analysis of millimeter wave GaN power transistors through X-parameters and TCAD device simulations. / Guerra, Diego; Saraniti, Marco; Ferry, David K.; Goodnick, Stephen.

IEEE MTT-S International Microwave Symposium Digest. 2013. 6697725.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Guerra, D, Saraniti, M, Ferry, DK & Goodnick, S 2013, Linearity analysis of millimeter wave GaN power transistors through X-parameters and TCAD device simulations. in IEEE MTT-S International Microwave Symposium Digest., 6697725, 2013 IEEE MTT-S International Microwave Symposium Digest, MTT 2013, Seattle, WA, United States, 6/2/13. https://doi.org/10.1109/MWSYM.2013.6697725
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N2 - A novel approach to perform two-tone and modulated signal linearity analysis with TCAD device simulators is reported. The X-parameters of the simulated device are first extracted through one-tone large-signal coupled circuit-device simulations by exploiting, in our case, a coupled Harmonic Balance - TCAD Monte Carlo particle-based device simulator. Then, large signal linearity figures of merit such as two-tone intermodulation distortion and adjacent channel leakage ratio are obtained by a commercial Circuit Envelope simulator and the one-tone X-parameter compact model. In such a way, the TCAD simulation of a prohibitive number of RF cycles, due to the slowly varying envelope of the modulated carrier, is avoided.

AB - A novel approach to perform two-tone and modulated signal linearity analysis with TCAD device simulators is reported. The X-parameters of the simulated device are first extracted through one-tone large-signal coupled circuit-device simulations by exploiting, in our case, a coupled Harmonic Balance - TCAD Monte Carlo particle-based device simulator. Then, large signal linearity figures of merit such as two-tone intermodulation distortion and adjacent channel leakage ratio are obtained by a commercial Circuit Envelope simulator and the one-tone X-parameter compact model. In such a way, the TCAD simulation of a prohibitive number of RF cycles, due to the slowly varying envelope of the modulated carrier, is avoided.

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