Abstract

A novel approach to perform two-tone and modulated signal linearity analysis with TCAD device simulators is reported. The X-parameters of the simulated device are first extracted through one-tone large-signal coupled circuit-device simulations by exploiting, in our case, a coupled Harmonic Balance - TCAD Monte Carlo particle-based device simulator. Then, large signal linearity figures of merit such as two-tone intermodulation distortion and adjacent channel leakage ratio are obtained by a commercial Circuit Envelope simulator and the one-tone X-parameter compact model. In such a way, the TCAD simulation of a prohibitive number of RF cycles, due to the slowly varying envelope of the modulated carrier, is avoided.

Original languageEnglish (US)
Title of host publication2013 IEEE MTT-S International Microwave Symposium Digest, MTT 2013
DOIs
StatePublished - Dec 1 2013
Event2013 IEEE MTT-S International Microwave Symposium Digest, MTT 2013 - Seattle, WA, United States
Duration: Jun 2 2013Jun 7 2013

Publication series

NameIEEE MTT-S International Microwave Symposium Digest
ISSN (Print)0149-645X

Other

Other2013 IEEE MTT-S International Microwave Symposium Digest, MTT 2013
CountryUnited States
CitySeattle, WA
Period6/2/136/7/13

Keywords

  • GaN HEMT
  • Intermodulation Distortion
  • Monte Carlo
  • Nonlinear Modeling
  • TCAD
  • X-parameters

ASJC Scopus subject areas

  • Radiation
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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  • Cite this

    Guerra, D., Saraniti, M., Ferry, D. K., & Goodnick, S. (2013). Linearity analysis of millimeter wave GaN power transistors through X-parameters and TCAD device simulations. In 2013 IEEE MTT-S International Microwave Symposium Digest, MTT 2013 [6697725] (IEEE MTT-S International Microwave Symposium Digest). https://doi.org/10.1109/MWSYM.2013.6697725