@inproceedings{cd79abcdcaec452882ed1752d83966a2,
title = "Linearity analysis of millimeter wave GaN power transistors through X-parameters and TCAD device simulations",
abstract = "A novel approach to perform two-tone and modulated signal linearity analysis with TCAD device simulators is reported. The X-parameters of the simulated device are first extracted through one-tone large-signal coupled circuit-device simulations by exploiting, in our case, a coupled Harmonic Balance - TCAD Monte Carlo particle-based device simulator. Then, large signal linearity figures of merit such as two-tone intermodulation distortion and adjacent channel leakage ratio are obtained by a commercial Circuit Envelope simulator and the one-tone X-parameter compact model. In such a way, the TCAD simulation of a prohibitive number of RF cycles, due to the slowly varying envelope of the modulated carrier, is avoided.",
keywords = "GaN HEMT, Intermodulation Distortion, Monte Carlo, Nonlinear Modeling, TCAD, X-parameters",
author = "Diego Guerra and Marco Saraniti and Ferry, {David K.} and Stephen Goodnick",
year = "2013",
month = dec,
day = "1",
doi = "10.1109/MWSYM.2013.6697725",
language = "English (US)",
isbn = "9781467361767",
series = "IEEE MTT-S International Microwave Symposium Digest",
booktitle = "2013 IEEE MTT-S International Microwave Symposium Digest, MTT 2013",
note = "2013 IEEE MTT-S International Microwave Symposium Digest, MTT 2013 ; Conference date: 02-06-2013 Through 07-06-2013",
}