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Line defects in silicon: The 90°partial dislocation
James R. Chelikowsky, John Spence
Physics
Applied Structural Discovery, Center for (ASD)
Biological Physics, Center for
Research output
:
Contribution to journal
›
Article
›
peer-review
50
Scopus citations
Overview
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Chemical Compounds
Crystal Line Defect
100%
Band Gap
44%
Strain Energy
37%
Pseudopotential
37%
Photoconductivity
35%
Electron Microscopy
25%
Electrical Property
24%
Electronic State
21%
Engineering & Materials Science
Silicon
46%
Defects
40%
Geometry
36%
Energy gap
26%
Electronic states
18%
Capacitance measurement
17%
Electron microscopy
15%
Structural properties
12%
Strain energy
12%
Electric properties
12%
Experiments
4%
Physics & Astronomy
defects
32%
silicon
31%
geometry
23%
pseudopotentials
8%
electron microscopy
7%
capacitance
6%
electrical properties
6%
orbitals
5%
electronics
4%
energy
2%