Light scattering determination of band offsets in GaAs (AlGa)As and GaSb (AlGa)Sb quantum wells: A comparative study

J. Meneńdez, A. Pinczuk, D. J. Werder, A. C. Gossard, J. H. English, T. H. Chiu, W. T. Tsang

Research output: Contribution to journalArticle

6 Scopus citations


We determine the energy band offsets in GaAs AlxGa1-xAs and GaSb AlxGa1-xSb quantum wells with a new light-scattering method. We measure electronic intersubband transitions in the conduction band of the quantum wells, and use this information to deduce the conduction band discontinuity ΔEc. The light scattering technique is very accurate because ΔEc can be determined regardless of the valence band structure or exciton binding energies. Our results indicate that the valence band offset of the two systems are very similar, suggesting the validity of a weaker form of the Common Anion Rule.

Original languageEnglish (US)
Pages (from-to)163-166
Number of pages4
JournalSuperlattices and Microstructures
Issue number2
StatePublished - 1987


ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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