Lattice and energy band engineering in AllnGaN/GaN heterostructures

M. Asif Khan; J. W. Yang; G. Simin; R. Gaska; M. S. Shur; Hans Conrad Zur Loye; G. Tamulaitis; A. Zukauskas; David Smith; D. Chandrasekhar; R. Bicknell-Tassius

doi:10.1063/1.125970

Lattice and energy band engineering in AllnGaN/GaN heterostructures

M. Asif Khan, J. W. Yang, G. Simin, R. Gaska, M. S. Shur, Hans Conrad Zur Loye, G. Tamulaitis, A. Zukauskas, David Smith, D. Chandrasekhar, R. Bicknell-Tassius

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Abstract

We report on structural, optical, and electrical properties of Al_xIn_yGa_1-x-yNGaN heterostructures grown on sapphire and 6H-SiC substrates. Our results demonstrate that incorporation of In reduces the lattice mismatch, Δa, between AlInGaN and GaN, and that an In to Al ratio of close to 1:5 results in nearly strain-free heterostructures. The observed reduction in band gap, ΔE_g, determined from photoluminescence measurements, is more than 1.5 times higher than estimated from the linear dependencies of Δa and ΔE_g on the In molar fraction. The incorporation of In and resulting changes in the built-in strain in AlInGaN/GaN heterostructures strongly affect the transport properties of the two-dimensional electron gas at the heterointerface. The obtained results demonstrate the potential of strain energy band engineering for GaN-based electronic applications.

Original language	English (US)
Pages (from-to)	1161-1163
Number of pages	3
Journal	Applied Physics Letters
Volume	76
Issue number	9
DOIs	https://doi.org/10.1063/1.125970
State	Published - Feb 28 2000

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Physics and Astronomy (miscellaneous)

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title = "Lattice and energy band engineering in AllnGaN/GaN heterostructures",

abstract = "We report on structural, optical, and electrical properties of AlxInyGa1-x-yNGaN heterostructures grown on sapphire and 6H-SiC substrates. Our results demonstrate that incorporation of In reduces the lattice mismatch, Δa, between AlInGaN and GaN, and that an In to Al ratio of close to 1:5 results in nearly strain-free heterostructures. The observed reduction in band gap, ΔEg, determined from photoluminescence measurements, is more than 1.5 times higher than estimated from the linear dependencies of Δa and ΔEg on the In molar fraction. The incorporation of In and resulting changes in the built-in strain in AlInGaN/GaN heterostructures strongly affect the transport properties of the two-dimensional electron gas at the heterointerface. The obtained results demonstrate the potential of strain energy band engineering for GaN-based electronic applications.",

author = "{Asif Khan}, M. and Yang, {J. W.} and G. Simin and R. Gaska and Shur, {M. S.} and {Zur Loye}, {Hans Conrad} and G. Tamulaitis and A. Zukauskas and David Smith and D. Chandrasekhar and R. Bicknell-Tassius",

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doi = "10.1063/1.125970",

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T1 - Lattice and energy band engineering in AllnGaN/GaN heterostructures

AU - Asif Khan, M.

AU - Yang, J. W.

AU - Simin, G.

AU - Gaska, R.

AU - Shur, M. S.

AU - Zur Loye, Hans Conrad

AU - Tamulaitis, G.

AU - Zukauskas, A.

AU - Smith, David

AU - Chandrasekhar, D.

AU - Bicknell-Tassius, R.

PY - 2000/2/28

Y1 - 2000/2/28

N2 - We report on structural, optical, and electrical properties of AlxInyGa1-x-yNGaN heterostructures grown on sapphire and 6H-SiC substrates. Our results demonstrate that incorporation of In reduces the lattice mismatch, Δa, between AlInGaN and GaN, and that an In to Al ratio of close to 1:5 results in nearly strain-free heterostructures. The observed reduction in band gap, ΔEg, determined from photoluminescence measurements, is more than 1.5 times higher than estimated from the linear dependencies of Δa and ΔEg on the In molar fraction. The incorporation of In and resulting changes in the built-in strain in AlInGaN/GaN heterostructures strongly affect the transport properties of the two-dimensional electron gas at the heterointerface. The obtained results demonstrate the potential of strain energy band engineering for GaN-based electronic applications.

AB - We report on structural, optical, and electrical properties of AlxInyGa1-x-yNGaN heterostructures grown on sapphire and 6H-SiC substrates. Our results demonstrate that incorporation of In reduces the lattice mismatch, Δa, between AlInGaN and GaN, and that an In to Al ratio of close to 1:5 results in nearly strain-free heterostructures. The observed reduction in band gap, ΔEg, determined from photoluminescence measurements, is more than 1.5 times higher than estimated from the linear dependencies of Δa and ΔEg on the In molar fraction. The incorporation of In and resulting changes in the built-in strain in AlInGaN/GaN heterostructures strongly affect the transport properties of the two-dimensional electron gas at the heterointerface. The obtained results demonstrate the potential of strain energy band engineering for GaN-based electronic applications.

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EP - 1163

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 9

ER -

Lattice and energy band engineering in AllnGaN/GaN heterostructures

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