Lateral field excitation film bulk acoustic resonator as infrared sensor

Xiaotun Qiu, Rui Tang, Jie Zhu, Hongyu Yu, Ziyu Wang, Jon Oiler

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

This paper investigated an infrared (IR) sensitive Lateral Field Excitation (LFE) Film Bulk Acoustic Resonator (FBAR). The resonant frequency of the LFE FBAR decreased when there was IR (peak wavelength at 750nm) illumination on the device. A linear relationship between the resonant frequency and the IR intensity was obtained with a detection limit of 9 μW/mm2. The sensing mechanism is attributed to the fact that the Young's modulus of the resonator material (ZnO) depends on temperature. In general, for a resonator operating in a bulk mode, a change in the Young's modulus translates into a shift of the resonant frequency. Thus, the sensitivity of the FBAR relies on its temperature coefficient of resonant frequency (TCF). Thickness Field Excitation (TFE) FBAR possessed a larger TCF. However, it showed a lower sensitivity to IR compared with the LFE FBAR. This was due to the reflection of IR radiation from the top electrode on the TFE FBAR.

Original languageEnglish (US)
Title of host publicationIEEE Sensors 2010 Conference, SENSORS 2010
Pages623-626
Number of pages4
DOIs
StatePublished - Dec 1 2010
Event9th IEEE Sensors Conference 2010, SENSORS 2010 - Waikoloa, HI, United States
Duration: Nov 1 2010Nov 4 2010

Publication series

NameProceedings of IEEE Sensors

Other

Other9th IEEE Sensors Conference 2010, SENSORS 2010
CountryUnited States
CityWaikoloa, HI
Period11/1/1011/4/10

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ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Qiu, X., Tang, R., Zhu, J., Yu, H., Wang, Z., & Oiler, J. (2010). Lateral field excitation film bulk acoustic resonator as infrared sensor. In IEEE Sensors 2010 Conference, SENSORS 2010 (pp. 623-626). [5690426] (Proceedings of IEEE Sensors). https://doi.org/10.1109/ICSENS.2010.5690426