TY - GEN
T1 - Lateral field excitation film bulk acoustic resonator as infrared sensor
AU - Qiu, Xiaotun
AU - Tang, Rui
AU - Zhu, Jie
AU - Yu, Hongyu
AU - Wang, Ziyu
AU - Oiler, Jon
PY - 2010/12/1
Y1 - 2010/12/1
N2 - This paper investigated an infrared (IR) sensitive Lateral Field Excitation (LFE) Film Bulk Acoustic Resonator (FBAR). The resonant frequency of the LFE FBAR decreased when there was IR (peak wavelength at 750nm) illumination on the device. A linear relationship between the resonant frequency and the IR intensity was obtained with a detection limit of 9 μW/mm2. The sensing mechanism is attributed to the fact that the Young's modulus of the resonator material (ZnO) depends on temperature. In general, for a resonator operating in a bulk mode, a change in the Young's modulus translates into a shift of the resonant frequency. Thus, the sensitivity of the FBAR relies on its temperature coefficient of resonant frequency (TCF). Thickness Field Excitation (TFE) FBAR possessed a larger TCF. However, it showed a lower sensitivity to IR compared with the LFE FBAR. This was due to the reflection of IR radiation from the top electrode on the TFE FBAR.
AB - This paper investigated an infrared (IR) sensitive Lateral Field Excitation (LFE) Film Bulk Acoustic Resonator (FBAR). The resonant frequency of the LFE FBAR decreased when there was IR (peak wavelength at 750nm) illumination on the device. A linear relationship between the resonant frequency and the IR intensity was obtained with a detection limit of 9 μW/mm2. The sensing mechanism is attributed to the fact that the Young's modulus of the resonator material (ZnO) depends on temperature. In general, for a resonator operating in a bulk mode, a change in the Young's modulus translates into a shift of the resonant frequency. Thus, the sensitivity of the FBAR relies on its temperature coefficient of resonant frequency (TCF). Thickness Field Excitation (TFE) FBAR possessed a larger TCF. However, it showed a lower sensitivity to IR compared with the LFE FBAR. This was due to the reflection of IR radiation from the top electrode on the TFE FBAR.
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U2 - 10.1109/ICSENS.2010.5690426
DO - 10.1109/ICSENS.2010.5690426
M3 - Conference contribution
AN - SCOPUS:79951878529
SN - 9781424481682
T3 - Proceedings of IEEE Sensors
SP - 623
EP - 626
BT - IEEE Sensors 2010 Conference, SENSORS 2010
T2 - 9th IEEE Sensors Conference 2010, SENSORS 2010
Y2 - 1 November 2010 through 4 November 2010
ER -