Lateral Current Spreading in III-N Ultraviolet Vertical-Cavity Surface-Emitting Lasers Using Modulation-Doped Short Period Superlattices

Karan Mehta, Yuh Shiuan Liu, Jialin Wang, Hoon Jeong, Theeradetch Detchprohm, Young Jae Park, Shanthan Reddy Alugubelli, Shuo Wang, Fernando Ponce, Shyh Chiang Shen, Russell D. Dupuis, P. Douglas Yoder

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

Lateral hole injection into AlGaN-based ultraviolet (UV) vertical-cavity light-emitting lasers (VCSELs) has been studied via numerical simulation. For blue and violet vertical cavity light emitters, indium tin oxide (ITO) is most commonly used as a transparent current spreading layer to increase the overlap between the optical mode and the radial current profile. However, ITO has very high optical losses in the UV spectrum, so alternative schemes for lateral current spreading have been investigated for use in UV-VCSELs. A modulation doped short-period superlattice (MD-SPSL) has been proposed as a transparent lateral current spreading layer in UV-VCSELs. The narrow bandgap unintentionally doped (uid) material maintains a high mobility due to reduced impurity scattering, and has a high free hole concentration due to modulation doping, thus forming highly conductive channels which aid lateral hole transport. This has been shown to partially mitigate current crowding around the current aperture. To account for imperfect modulation doping due to the magnesium memory effects and other factors, the effect of varying the hole mobility in the uid-narrow bandgap layer of the MD-SPSL from 13-300 cm2/(V·s) on the threshold current and slope efficiency has also been studied. Employing a MDSPSL results in a significant reduction in the threshold current and slope efficiency compared to ITO, and the extent of the improvement depends on the hole mobility in the uid-AlGaN layer.

Original languageEnglish (US)
JournalIEEE Journal of Quantum Electronics
DOIs
StateAccepted/In press - May 15 2018

Fingerprint

Superlattices
Surface emitting lasers
surface emitting lasers
superlattices
Tin oxides
Modulation
Indium
modulation
cavities
Hole mobility
indium oxides
modulation doping
tin oxides
Energy gap
Doping (additives)
hole mobility
threshold currents
Hole concentration
Optical losses
slopes

Keywords

  • Device modeling
  • Efficient lateral current spreading
  • Epitaxial layers
  • GaN
  • Indium tin oxide
  • Optical losses
  • Optical pumping
  • Optical reflection
  • Photonic band gap
  • Ultraviolet laser
  • Vertical cavity surface emitting lasers
  • Vertical cavity surface emitting lasers

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

Lateral Current Spreading in III-N Ultraviolet Vertical-Cavity Surface-Emitting Lasers Using Modulation-Doped Short Period Superlattices. / Mehta, Karan; Liu, Yuh Shiuan; Wang, Jialin; Jeong, Hoon; Detchprohm, Theeradetch; Park, Young Jae; Alugubelli, Shanthan Reddy; Wang, Shuo; Ponce, Fernando; Shen, Shyh Chiang; Dupuis, Russell D.; Yoder, P. Douglas.

In: IEEE Journal of Quantum Electronics, 15.05.2018.

Research output: Contribution to journalArticle

Mehta, Karan ; Liu, Yuh Shiuan ; Wang, Jialin ; Jeong, Hoon ; Detchprohm, Theeradetch ; Park, Young Jae ; Alugubelli, Shanthan Reddy ; Wang, Shuo ; Ponce, Fernando ; Shen, Shyh Chiang ; Dupuis, Russell D. ; Yoder, P. Douglas. / Lateral Current Spreading in III-N Ultraviolet Vertical-Cavity Surface-Emitting Lasers Using Modulation-Doped Short Period Superlattices. In: IEEE Journal of Quantum Electronics. 2018.
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abstract = "Lateral hole injection into AlGaN-based ultraviolet (UV) vertical-cavity light-emitting lasers (VCSELs) has been studied via numerical simulation. For blue and violet vertical cavity light emitters, indium tin oxide (ITO) is most commonly used as a transparent current spreading layer to increase the overlap between the optical mode and the radial current profile. However, ITO has very high optical losses in the UV spectrum, so alternative schemes for lateral current spreading have been investigated for use in UV-VCSELs. A modulation doped short-period superlattice (MD-SPSL) has been proposed as a transparent lateral current spreading layer in UV-VCSELs. The narrow bandgap unintentionally doped (uid) material maintains a high mobility due to reduced impurity scattering, and has a high free hole concentration due to modulation doping, thus forming highly conductive channels which aid lateral hole transport. This has been shown to partially mitigate current crowding around the current aperture. To account for imperfect modulation doping due to the magnesium memory effects and other factors, the effect of varying the hole mobility in the uid-narrow bandgap layer of the MD-SPSL from 13-300 cm2/(V·s) on the threshold current and slope efficiency has also been studied. Employing a MDSPSL results in a significant reduction in the threshold current and slope efficiency compared to ITO, and the extent of the improvement depends on the hole mobility in the uid-AlGaN layer.",
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AU - Jeong, Hoon

AU - Detchprohm, Theeradetch

AU - Park, Young Jae

AU - Alugubelli, Shanthan Reddy

AU - Wang, Shuo

AU - Ponce, Fernando

AU - Shen, Shyh Chiang

AU - Dupuis, Russell D.

AU - Yoder, P. Douglas

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AB - Lateral hole injection into AlGaN-based ultraviolet (UV) vertical-cavity light-emitting lasers (VCSELs) has been studied via numerical simulation. For blue and violet vertical cavity light emitters, indium tin oxide (ITO) is most commonly used as a transparent current spreading layer to increase the overlap between the optical mode and the radial current profile. However, ITO has very high optical losses in the UV spectrum, so alternative schemes for lateral current spreading have been investigated for use in UV-VCSELs. A modulation doped short-period superlattice (MD-SPSL) has been proposed as a transparent lateral current spreading layer in UV-VCSELs. The narrow bandgap unintentionally doped (uid) material maintains a high mobility due to reduced impurity scattering, and has a high free hole concentration due to modulation doping, thus forming highly conductive channels which aid lateral hole transport. This has been shown to partially mitigate current crowding around the current aperture. To account for imperfect modulation doping due to the magnesium memory effects and other factors, the effect of varying the hole mobility in the uid-narrow bandgap layer of the MD-SPSL from 13-300 cm2/(V·s) on the threshold current and slope efficiency has also been studied. Employing a MDSPSL results in a significant reduction in the threshold current and slope efficiency compared to ITO, and the extent of the improvement depends on the hole mobility in the uid-AlGaN layer.

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