Abstract

We report for the first time the simulation of the large-signal dynamic load-line of high-Q matched mm-wave power amplifiers obtained through a Monte Carlo particle-based device simulator. Due to the long transient time of large reactive circuit elements, the time-domain solution of power amplifier high-Q matching networks requires prohibitive simulation time for the already time-consuming Monte Carlo technique. However, by emulating the high-Q matching network and the load impedance through an active load-line, we show that, in combination with our fast Cellular Monte Carlo algorithm, particle-based accurate device simulations of the large signal operations of AlGaN/GaN HEMTS are possible in a time-effective manner. Reliability issues and parasitic elements (such as dislocations and contact resistance) are also taken into account by, respectively, exploiting the accurate carrier dynamics description of the Monte Carlo technique and self-consistently coupling a Finite Difference Time Domain network solver with our device simulator code.

Original languageEnglish (US)
Title of host publicationInternational Conference on Simulation of Semiconductor Processes and Devices, SISPAD
Pages87-90
Number of pages4
DOIs
StatePublished - 2011
Event2011 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2011 - Osaka, Japan
Duration: Sep 8 2011Sep 10 2011

Other

Other2011 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2011
CountryJapan
CityOsaka
Period9/8/119/10/11

Fingerprint

Device Simulation
Wave power
Millimeter Wave
Power amplifiers
Millimeter waves
Monte Carlo Simulation
Inclusion
Simulators
Power Amplifier
Monte Carlo Techniques
Contact resistance
Dynamic loads
Simulator
AlGaN
Contact Resistance
Dynamic Load
Networks (circuits)
Line
Finite-difference Time-domain (FDTD)
Monte Carlo Algorithm

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Computer Science Applications
  • Modeling and Simulation

Cite this

Guerra, D., Ferry, D. K., Goodnick, S., Saraniti, M., & Marino, F. A. (2011). Large-signal full-band Monte Carlo device simulation of millimeter-wave power GaN HEMTs with the inclusion of parasitic and reliability issues. In International Conference on Simulation of Semiconductor Processes and Devices, SISPAD (pp. 87-90). [6035056] https://doi.org/10.1109/SISPAD.2011.6035056

Large-signal full-band Monte Carlo device simulation of millimeter-wave power GaN HEMTs with the inclusion of parasitic and reliability issues. / Guerra, Diego; Ferry, David K.; Goodnick, Stephen; Saraniti, Marco; Marino, Fabio A.

International Conference on Simulation of Semiconductor Processes and Devices, SISPAD. 2011. p. 87-90 6035056.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Guerra, D, Ferry, DK, Goodnick, S, Saraniti, M & Marino, FA 2011, Large-signal full-band Monte Carlo device simulation of millimeter-wave power GaN HEMTs with the inclusion of parasitic and reliability issues. in International Conference on Simulation of Semiconductor Processes and Devices, SISPAD., 6035056, pp. 87-90, 2011 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2011, Osaka, Japan, 9/8/11. https://doi.org/10.1109/SISPAD.2011.6035056
Guerra D, Ferry DK, Goodnick S, Saraniti M, Marino FA. Large-signal full-band Monte Carlo device simulation of millimeter-wave power GaN HEMTs with the inclusion of parasitic and reliability issues. In International Conference on Simulation of Semiconductor Processes and Devices, SISPAD. 2011. p. 87-90. 6035056 https://doi.org/10.1109/SISPAD.2011.6035056
Guerra, Diego ; Ferry, David K. ; Goodnick, Stephen ; Saraniti, Marco ; Marino, Fabio A. / Large-signal full-band Monte Carlo device simulation of millimeter-wave power GaN HEMTs with the inclusion of parasitic and reliability issues. International Conference on Simulation of Semiconductor Processes and Devices, SISPAD. 2011. pp. 87-90
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