Large gate modulation in the current of a room temperature single molecule transistor

Bingqian Xu, Xiaoyin Xiao, Xiaomei Yang, Ling Zang, Nongjian Tao

Research output: Contribution to journalArticle

232 Scopus citations


We have demonstrated a single molecule field effect transistor (FET) which consists of a redox molecule (perylene tetracarboxylic diimide) covalently bonded to a source and drain electrode and an electrochemical gate. By adjusting the gate voltage, the energy levels of empty molecular states are shifted to the Fermi level of the source and drain electrodes. This results in a nearly 3 orders of magnitude increase in the source-drain current, in the fashion of an n-type FET. The large current increase is attributed to an electron transport mediated by the lowest empty molecular energy level when it lines up with the Fermi level.

Original languageEnglish (US)
Pages (from-to)2386-2387
Number of pages2
JournalJournal of the American Chemical Society
Issue number8
StatePublished - Mar 2 2005


ASJC Scopus subject areas

  • Catalysis
  • Chemistry(all)
  • Biochemistry
  • Colloid and Surface Chemistry

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