Large gate modulation in the current of a room temperature single molecule transistor

Bingqian Xu, Xiaoyin Xiao, Xiaomei Yang, Ling Zang, Nongjian Tao

Research output: Contribution to journalArticle

231 Citations (Scopus)

Abstract

We have demonstrated a single molecule field effect transistor (FET) which consists of a redox molecule (perylene tetracarboxylic diimide) covalently bonded to a source and drain electrode and an electrochemical gate. By adjusting the gate voltage, the energy levels of empty molecular states are shifted to the Fermi level of the source and drain electrodes. This results in a nearly 3 orders of magnitude increase in the source-drain current, in the fashion of an n-type FET. The large current increase is attributed to an electron transport mediated by the lowest empty molecular energy level when it lines up with the Fermi level.

Original languageEnglish (US)
Pages (from-to)2386-2387
Number of pages2
JournalJournal of the American Chemical Society
Volume127
Issue number8
DOIs
StatePublished - Mar 2 2005

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Field effect transistors
Fermi level
Electron energy levels
Electrodes
Transistors
Perylene
Modulation
Molecules
Temperature
Drain current
Electron Transport
Oxidation-Reduction
Electric potential

ASJC Scopus subject areas

  • Chemistry(all)

Cite this

Large gate modulation in the current of a room temperature single molecule transistor. / Xu, Bingqian; Xiao, Xiaoyin; Yang, Xiaomei; Zang, Ling; Tao, Nongjian.

In: Journal of the American Chemical Society, Vol. 127, No. 8, 02.03.2005, p. 2386-2387.

Research output: Contribution to journalArticle

Xu, Bingqian ; Xiao, Xiaoyin ; Yang, Xiaomei ; Zang, Ling ; Tao, Nongjian. / Large gate modulation in the current of a room temperature single molecule transistor. In: Journal of the American Chemical Society. 2005 ; Vol. 127, No. 8. pp. 2386-2387.
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