Large electric-filed induced electron drift velocity observed in InGa1As-based p-i-n semiconductor nanostructures

W. Liang, K. T. Tsen, Meng Chyi Wu, Chong Long Ho, Wen Jeng Ho

Research output: Contribution to journalConference article

Abstract

Transient subpicosecond Raman spectroscopy has been used to interrogate electron transport properties in InGa1As-based semiconductor nanostructure under the application of an electric field. The deduced electron drift velocity has been found to be much larger than either GaAs or InP-based p-i-n nanostructures at comparable field. We attribute this to both the much smaller electron effective mass and the much larger IT to x(L) energy separations in InGa1As-based semiconductor nanostructures.

Original languageEnglish (US)
Pages (from-to)265-270
Number of pages6
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume4992
DOIs
StatePublished - May 30 2003
EventUltrafast Phenomena in Semiconductors VII 2003 - San Jose, United States
Duration: Jan 25 2003Jan 31 2003

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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