Large electric-filed induced electron drift velocity observed in InGa1As-based p-i-n semiconductor nanostructures

W. Liang; K. T. Tsen; Meng Chyi Wu; Chong Long Ho; Wen Jeng Ho

doi:10.1117/12.479506

Large electric-filed induced electron drift velocity observed in InGa1As-based p-i-n semiconductor nanostructures

W. Liang, K. T. Tsen, Meng Chyi Wu, Chong Long Ho, Wen Jeng Ho

Physics

Research output: Contribution to journal › Conference article › peer-review

Abstract

Transient subpicosecond Raman spectroscopy has been used to interrogate electron transport properties in InGa1As-based semiconductor nanostructure under the application of an electric field. The deduced electron drift velocity has been found to be much larger than either GaAs or InP-based p-i-n nanostructures at comparable field. We attribute this to both the much smaller electron effective mass and the much larger IT to x(L) energy separations in InGa1As-based semiconductor nanostructures.

Original language	English (US)
Pages (from-to)	265-270
Number of pages	6
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	4992
DOIs	https://doi.org/10.1117/12.479506
State	Published - May 30 2003
Event	Ultrafast Phenomena in Semiconductors VII 2003 - San Jose, United States Duration: Jan 25 2003 → Jan 31 2003

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

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title = "Large electric-filed induced electron drift velocity observed in InGa1As-based p-i-n semiconductor nanostructures",

abstract = "Transient subpicosecond Raman spectroscopy has been used to interrogate electron transport properties in InGa1As-based semiconductor nanostructure under the application of an electric field. The deduced electron drift velocity has been found to be much larger than either GaAs or InP-based p-i-n nanostructures at comparable field. We attribute this to both the much smaller electron effective mass and the much larger IT to x(L) energy separations in InGa1As-based semiconductor nanostructures.",

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AU - Liang, W.

AU - Tsen, K. T.

AU - Wu, Meng Chyi

AU - Ho, Chong Long

AU - Ho, Wen Jeng

PY - 2003/5/30

Y1 - 2003/5/30

N2 - Transient subpicosecond Raman spectroscopy has been used to interrogate electron transport properties in InGa1As-based semiconductor nanostructure under the application of an electric field. The deduced electron drift velocity has been found to be much larger than either GaAs or InP-based p-i-n nanostructures at comparable field. We attribute this to both the much smaller electron effective mass and the much larger IT to x(L) energy separations in InGa1As-based semiconductor nanostructures.

AB - Transient subpicosecond Raman spectroscopy has been used to interrogate electron transport properties in InGa1As-based semiconductor nanostructure under the application of an electric field. The deduced electron drift velocity has been found to be much larger than either GaAs or InP-based p-i-n nanostructures at comparable field. We attribute this to both the much smaller electron effective mass and the much larger IT to x(L) energy separations in InGa1As-based semiconductor nanostructures.

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EP - 270

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

T2 - Ultrafast Phenomena in Semiconductors VII 2003

Y2 - 25 January 2003 through 31 January 2003

ER -

Large electric-filed induced electron drift velocity observed in InGa1As-based p-i-n semiconductor nanostructures

Abstract

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