Large-area YBa2Cu3O7-δ thin films on sapphire for microwave applications

B. F. Cole, G. C. Liang, N. Newman, K. Char, G. Zaharchuk, J. S. Martens

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Abstract

We have deposited YBa2Cu3O7-δ(YBCO) films with low microwave surface resistance (Rs) on 5-cm-diam, oxide-buffered sapphire substrates by planar magnetron sputtering. MgO buffer layers are used on M-plane (101̄0) sapphire, and R-plane (11̄02) sapphire is buffered by CeO2. Rs values of 450-620 μΩ at 77 K and 10 GHz were measured across an entire 5-cm diam YBCO film on M-plane sapphire. For YBCO on R-plane sapphire, Rs values at 77 K and 10 GHz were 950 μΩ for a 5-cm-diam wafer and 700 μΩ for 1×1 cm2 samples.

Original languageEnglish (US)
Pages (from-to)1727-1729
Number of pages3
JournalApplied Physics Letters
Volume61
Issue number14
DOIs
StatePublished - Dec 1 1992
Externally publishedYes

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ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Cole, B. F., Liang, G. C., Newman, N., Char, K., Zaharchuk, G., & Martens, J. S. (1992). Large-area YBa2Cu3O7-δ thin films on sapphire for microwave applications. Applied Physics Letters, 61(14), 1727-1729. https://doi.org/10.1063/1.108411