Large-area YBa2Cu3O7-δ thin films on sapphire for microwave applications

B. F. Cole, G. C. Liang, Nathan Newman, K. Char, G. Zaharchuk, J. S. Martens

Research output: Contribution to journalArticle

90 Citations (Scopus)

Abstract

We have deposited YBa2Cu3O7-δ(YBCO) films with low microwave surface resistance (Rs) on 5-cm-diam, oxide-buffered sapphire substrates by planar magnetron sputtering. MgO buffer layers are used on M-plane (101̄0) sapphire, and R-plane (11̄02) sapphire is buffered by CeO2. Rs values of 450-620 μΩ at 77 K and 10 GHz were measured across an entire 5-cm diam YBCO film on M-plane sapphire. For YBCO on R-plane sapphire, Rs values at 77 K and 10 GHz were 950 μΩ for a 5-cm-diam wafer and 700 μΩ for 1×1 cm2 samples.

Original languageEnglish (US)
Pages (from-to)1727-1729
Number of pages3
JournalApplied Physics Letters
Volume61
Issue number14
DOIs
StatePublished - 1992
Externally publishedYes

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sapphire
microwaves
thin films
magnetron sputtering
buffers
wafers
oxides

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Cole, B. F., Liang, G. C., Newman, N., Char, K., Zaharchuk, G., & Martens, J. S. (1992). Large-area YBa2Cu3O7-δ thin films on sapphire for microwave applications. Applied Physics Letters, 61(14), 1727-1729. https://doi.org/10.1063/1.108411

Large-area YBa2Cu3O7-δ thin films on sapphire for microwave applications. / Cole, B. F.; Liang, G. C.; Newman, Nathan; Char, K.; Zaharchuk, G.; Martens, J. S.

In: Applied Physics Letters, Vol. 61, No. 14, 1992, p. 1727-1729.

Research output: Contribution to journalArticle

Cole, BF, Liang, GC, Newman, N, Char, K, Zaharchuk, G & Martens, JS 1992, 'Large-area YBa2Cu3O7-δ thin films on sapphire for microwave applications', Applied Physics Letters, vol. 61, no. 14, pp. 1727-1729. https://doi.org/10.1063/1.108411
Cole, B. F. ; Liang, G. C. ; Newman, Nathan ; Char, K. ; Zaharchuk, G. ; Martens, J. S. / Large-area YBa2Cu3O7-δ thin films on sapphire for microwave applications. In: Applied Physics Letters. 1992 ; Vol. 61, No. 14. pp. 1727-1729.
@article{f7a6c60f80c14b82904c77db5498c35f,
title = "Large-area YBa2Cu3O7-δ thin films on sapphire for microwave applications",
abstract = "We have deposited YBa2Cu3O7-δ(YBCO) films with low microwave surface resistance (Rs) on 5-cm-diam, oxide-buffered sapphire substrates by planar magnetron sputtering. MgO buffer layers are used on M-plane (101̄0) sapphire, and R-plane (11̄02) sapphire is buffered by CeO2. Rs values of 450-620 μΩ at 77 K and 10 GHz were measured across an entire 5-cm diam YBCO film on M-plane sapphire. For YBCO on R-plane sapphire, Rs values at 77 K and 10 GHz were 950 μΩ for a 5-cm-diam wafer and 700 μΩ for 1×1 cm2 samples.",
author = "Cole, {B. F.} and Liang, {G. C.} and Nathan Newman and K. Char and G. Zaharchuk and Martens, {J. S.}",
year = "1992",
doi = "10.1063/1.108411",
language = "English (US)",
volume = "61",
pages = "1727--1729",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "14",

}

TY - JOUR

T1 - Large-area YBa2Cu3O7-δ thin films on sapphire for microwave applications

AU - Cole, B. F.

AU - Liang, G. C.

AU - Newman, Nathan

AU - Char, K.

AU - Zaharchuk, G.

AU - Martens, J. S.

PY - 1992

Y1 - 1992

N2 - We have deposited YBa2Cu3O7-δ(YBCO) films with low microwave surface resistance (Rs) on 5-cm-diam, oxide-buffered sapphire substrates by planar magnetron sputtering. MgO buffer layers are used on M-plane (101̄0) sapphire, and R-plane (11̄02) sapphire is buffered by CeO2. Rs values of 450-620 μΩ at 77 K and 10 GHz were measured across an entire 5-cm diam YBCO film on M-plane sapphire. For YBCO on R-plane sapphire, Rs values at 77 K and 10 GHz were 950 μΩ for a 5-cm-diam wafer and 700 μΩ for 1×1 cm2 samples.

AB - We have deposited YBa2Cu3O7-δ(YBCO) films with low microwave surface resistance (Rs) on 5-cm-diam, oxide-buffered sapphire substrates by planar magnetron sputtering. MgO buffer layers are used on M-plane (101̄0) sapphire, and R-plane (11̄02) sapphire is buffered by CeO2. Rs values of 450-620 μΩ at 77 K and 10 GHz were measured across an entire 5-cm diam YBCO film on M-plane sapphire. For YBCO on R-plane sapphire, Rs values at 77 K and 10 GHz were 950 μΩ for a 5-cm-diam wafer and 700 μΩ for 1×1 cm2 samples.

UR - http://www.scopus.com/inward/record.url?scp=21544439735&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=21544439735&partnerID=8YFLogxK

U2 - 10.1063/1.108411

DO - 10.1063/1.108411

M3 - Article

AN - SCOPUS:21544439735

VL - 61

SP - 1727

EP - 1729

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 14

ER -