k·p Models to study strained-layer quantum-well structures and superlattices

W. Pötz, D. K. Ferry

Research output: Contribution to journalArticle

3 Scopus citations

Abstract

We examine k·p models of varying degree of sophistication for their ability to describe the electronic structure of superlattices and quantum wells fabricated from direct-gap III-V compounds and their alloys. Energy levels of confined states in InAs/In1-xGaxAs and GaAs/GaAsySb1-y structures are studied. The importance of the inclusion of nonparabolicity and strain-dependence in the effective masses is demonstrated. In general, one-band models that merely include the shift of band edges can only give a qualitative picture of the energy spectrum. The importance of terms of higher order in strain is discussed.

Original languageEnglish (US)
Pages (from-to)151-157
Number of pages7
JournalSuperlattices and Microstructures
Volume2
Issue number2
DOIs
StatePublished - 1986

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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