Kinetics of amorphous silicon dissolution into aluminum layers

P. K. Shetty; N. D. Theodore; J. W. Mayer; Terry Alford

doi:10.1016/j.matlet.2005.09.022

Kinetics of amorphous silicon dissolution into aluminum layers

P. K. Shetty, N. D. Theodore, J. W. Mayer, Terry Alford

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Abstract

This study investigates the temperature dependence of the formation of pores in amorphous silicon films for potential application with flexible polymer substrates. An 800 nm layer of amorphous silicon (a-Si) was deposited on a silicon dioxide/silicon (SiO₂/Si) substrate followed by a 20 nm layer of aluminum (Al). Samples were annealed in a vacuum anneal furnace at temperatures between 300 and 600 °C, and were then analyzed using X-ray diffraction (XRD). Pore depths were measured using cross-section transmission electron microscopy (XTEM), and an activation energy (E_A) of 0.57 eV was derived for pore formation.

Original language	English (US)
Pages (from-to)	490-493
Number of pages	4
Journal	Materials Letters
Volume	60
Issue number	4
DOIs	https://doi.org/10.1016/j.matlet.2005.09.022
State	Published - Feb 2006

Keywords

Aluminum induced crystallization
XTEM

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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10.1016/j.matlet.2005.09.022

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title = "Kinetics of amorphous silicon dissolution into aluminum layers",

abstract = "This study investigates the temperature dependence of the formation of pores in amorphous silicon films for potential application with flexible polymer substrates. An 800 nm layer of amorphous silicon (a-Si) was deposited on a silicon dioxide/silicon (SiO2/Si) substrate followed by a 20 nm layer of aluminum (Al). Samples were annealed in a vacuum anneal furnace at temperatures between 300 and 600 °C, and were then analyzed using X-ray diffraction (XRD). Pore depths were measured using cross-section transmission electron microscopy (XTEM), and an activation energy (EA) of 0.57 eV was derived for pore formation.",

keywords = "Aluminum induced crystallization, XTEM",

author = "Shetty, {P. K.} and Theodore, {N. D.} and Mayer, {J. W.} and Terry Alford",

note = "Funding Information: This work was partially supported by the National Science Foundation (L. Hess, Grant No. DMR-0308127) to whom the authors are greatly indebted. The experimental contributions of Douglas Thompson, Yeongseok Zoo and Dr. Daniel Adams are deeply appreciated. Copyright: Copyright 2008 Elsevier B.V., All rights reserved.",

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doi = "10.1016/j.matlet.2005.09.022",

language = "English (US)",

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journal = "Materials Letters",

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T1 - Kinetics of amorphous silicon dissolution into aluminum layers

AU - Shetty, P. K.

AU - Theodore, N. D.

AU - Mayer, J. W.

AU - Alford, Terry

N1 - Funding Information: This work was partially supported by the National Science Foundation (L. Hess, Grant No. DMR-0308127) to whom the authors are greatly indebted. The experimental contributions of Douglas Thompson, Yeongseok Zoo and Dr. Daniel Adams are deeply appreciated. Copyright: Copyright 2008 Elsevier B.V., All rights reserved.

PY - 2006/2

Y1 - 2006/2

N2 - This study investigates the temperature dependence of the formation of pores in amorphous silicon films for potential application with flexible polymer substrates. An 800 nm layer of amorphous silicon (a-Si) was deposited on a silicon dioxide/silicon (SiO2/Si) substrate followed by a 20 nm layer of aluminum (Al). Samples were annealed in a vacuum anneal furnace at temperatures between 300 and 600 °C, and were then analyzed using X-ray diffraction (XRD). Pore depths were measured using cross-section transmission electron microscopy (XTEM), and an activation energy (EA) of 0.57 eV was derived for pore formation.

AB - This study investigates the temperature dependence of the formation of pores in amorphous silicon films for potential application with flexible polymer substrates. An 800 nm layer of amorphous silicon (a-Si) was deposited on a silicon dioxide/silicon (SiO2/Si) substrate followed by a 20 nm layer of aluminum (Al). Samples were annealed in a vacuum anneal furnace at temperatures between 300 and 600 °C, and were then analyzed using X-ray diffraction (XRD). Pore depths were measured using cross-section transmission electron microscopy (XTEM), and an activation energy (EA) of 0.57 eV was derived for pore formation.

KW - Aluminum induced crystallization

KW - XTEM

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DO - 10.1016/j.matlet.2005.09.022

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SN - 0167-577X

VL - 60

SP - 490

EP - 493

JO - Materials Letters

JF - Materials Letters

IS - 4

ER -

Kinetics of amorphous silicon dissolution into aluminum layers

Abstract

Keywords

ASJC Scopus subject areas

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