Kinetic control of dome cluster composition by varying Ge deposition rate

E. P. McDaniel, Jeffery Drucker, Qian Jiang, P. A. Crazier, David Smith

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The mean size of dome clusters grown by molecular beam epitaxy of pure Ge onto Si(100) at substrate temperatures, T, of 550°C und 650°C is deposition rate dependent. For samples with nominal Ge coverages near 8 ML (1 ML = 6.78 × 1014 atoms/cm2) and deposition rates between 1.4 and 17.5 ML/min, higher deposition rates decreased the mean dome diameter und increased the dome areal density. Additionally, the critical volume for the pyramid-to-dome transition decreases with increasing deposition rate for islands grown between T= 550°C and 650°C. By this measure, the Ge content of the dome clusters rises with increasing deposition rate. Quantitative, nm-resolved electron energy loss spectroscopy (EELS) measurements taken in a scanning transmission electron microscope confirm these results. For domes grown at T = 650°C with rates of 1.4 ML/min and 17.5 ML/min, EELS indicates 59% and 70% Ge compositions, respectively. These results show that dome cluster composition may be kinetically controlled by varying the Ge deposition rate.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposium Proceedings
Pages46-51
Number of pages6
Volume854
StatePublished - 2004
Event2004 MRS Fall Meeting - Boston, MA, United States
Duration: Nov 29 2004Dec 3 2004

Other

Other2004 MRS Fall Meeting
CountryUnited States
CityBoston, MA
Period11/29/0412/3/04

Fingerprint

Domes
Deposition rates
Kinetics
Chemical analysis
Electron energy loss spectroscopy
Molecular beam epitaxy
Electron microscopes
Scanning
Atoms
Substrates

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

McDaniel, E. P., Drucker, J., Jiang, Q., Crazier, P. A., & Smith, D. (2004). Kinetic control of dome cluster composition by varying Ge deposition rate. In Materials Research Society Symposium Proceedings (Vol. 854, pp. 46-51)

Kinetic control of dome cluster composition by varying Ge deposition rate. / McDaniel, E. P.; Drucker, Jeffery; Jiang, Qian; Crazier, P. A.; Smith, David.

Materials Research Society Symposium Proceedings. Vol. 854 2004. p. 46-51.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

McDaniel, EP, Drucker, J, Jiang, Q, Crazier, PA & Smith, D 2004, Kinetic control of dome cluster composition by varying Ge deposition rate. in Materials Research Society Symposium Proceedings. vol. 854, pp. 46-51, 2004 MRS Fall Meeting, Boston, MA, United States, 11/29/04.
McDaniel EP, Drucker J, Jiang Q, Crazier PA, Smith D. Kinetic control of dome cluster composition by varying Ge deposition rate. In Materials Research Society Symposium Proceedings. Vol. 854. 2004. p. 46-51
McDaniel, E. P. ; Drucker, Jeffery ; Jiang, Qian ; Crazier, P. A. ; Smith, David. / Kinetic control of dome cluster composition by varying Ge deposition rate. Materials Research Society Symposium Proceedings. Vol. 854 2004. pp. 46-51
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