TY - GEN
T1 - Junctionless nanowire MOSFET with dynamic threshold voltage operation methodology
AU - Mei, Jinhe
AU - Zhang, Aixi
AU - Yu, Cao
AU - Ye, Yun
AU - Wang, Hao
AU - Deng, Wanling
AU - He, Jin
PY - 2013
Y1 - 2013
N2 - In this paper, a junctionless nanowire MOSFET with the dynamic threshold voltage operation methodology (DT-JNT) is proposed and its characteristics are studied comparing with those of a conventional junctionless nanowire transistor (JNT) and a double-gate junctionless transistor (DG-JT) by TCAD simulations. The numerical results demonstrate that the DT-JNT shows a series of desirable features, e.g., integrating the advantages of the junctionless transistor, such as easy-to-manufacture, cost effective, etc and possessing dynamic threshold voltage, thus it enhances applicability to various circuit applications. In addition, when it is used by connect the control gate and the adjust gate together, its ON/OFF current ratio is enhanced. Overall, it holds the potential to be further used in the next generation nanoscale circuit design.
AB - In this paper, a junctionless nanowire MOSFET with the dynamic threshold voltage operation methodology (DT-JNT) is proposed and its characteristics are studied comparing with those of a conventional junctionless nanowire transistor (JNT) and a double-gate junctionless transistor (DG-JT) by TCAD simulations. The numerical results demonstrate that the DT-JNT shows a series of desirable features, e.g., integrating the advantages of the junctionless transistor, such as easy-to-manufacture, cost effective, etc and possessing dynamic threshold voltage, thus it enhances applicability to various circuit applications. In addition, when it is used by connect the control gate and the adjust gate together, its ON/OFF current ratio is enhanced. Overall, it holds the potential to be further used in the next generation nanoscale circuit design.
KW - Adjust gate
KW - Dynamic threshold voltage
KW - Junctionless
KW - Nanowire
UR - http://www.scopus.com/inward/record.url?scp=84881111817&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84881111817&partnerID=8YFLogxK
M3 - Conference contribution
AN - SCOPUS:84881111817
SN - 9781482205848
T3 - Technical Proceedings of the 2013 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2013
SP - 516
EP - 519
BT - Technical Proceedings of the 2013 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2013
T2 - Nanotechnology 2013: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational - 2013 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2013
Y2 - 12 May 2013 through 16 May 2013
ER -