Is SOD technology the solution to heating problems in SOI devices?

In this letter, we present our investigations on heating effects in Si on diamond and Si on AlN transistors, using a coupled Monte Carlo/ thermal moment expansion simulator. Both technologies are considered viable alternatives to silicon-on-insulator devices due to the fact that diamond and AlN have significantly higher thermal conductivities than SiO₂. This fact is beneficial in the following two aspects, as demonstrated in this letter: 1) It leads to a significant reduction in the thermal degradation of the device electrical characteristics, and 2) it allows a more uniform distribution of temperature in the device active region, which, in turn, enhances heat removal.