Ion implantation monitoring of GaAs using thermal waves

R. Garcia, E. J. Jaquez, Robert Culbertson, C. D'Acosta, C. Jasper

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Laser modulated thermoreflectivity, also called thermal wave technology, has been used in recent years to monitor ion implantation dose by monitoring the damage due to implantation. The thermal properties which are affected by lattice perturbations and other crystal imperfections are tracked by this technique. A gauge capability study was performed on the Thermawave TP300 for monitoring ion implantation of GaAs wafers. The results are presented. In order to determine the sensitivity of the technique to changes in dose, a matrix of GaAs and Si wafers was measured. During this study a downward trend was observed in the repeatability of our results. It is shown that damage to a sample during implantation will relax to a certain degree at room temperature. This damage relaxation can take up to 80 hours at room temperature and can be observed using thermal waves. It is shown that 'hot wafer decay' follows a logarithmic decay which is indicative of a diffusion process. At 180°C the decay lasts less than 1 minute which indicates that the defects causing this phenomenon have a low activation energy.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposium Proceedings
EditorsAnthony F. Garito, Alex K-Y. Jen, Charles Y-C. Lee, Larry R. Dalton
Place of PublicationPittsburgh, PA, United States
PublisherPubl by Materials Research Society
Pages673-678
Number of pages6
Volume316
ISBN (Print)1558992154
StatePublished - 1994
EventProceedings of the MRS 1993 Fall Meeting - Boston, MA, USA
Duration: Nov 29 1993Dec 3 1993

Other

OtherProceedings of the MRS 1993 Fall Meeting
CityBoston, MA, USA
Period11/29/9312/3/93

Fingerprint

Ion implantation
Defects
Monitoring
Crystal lattices
Gages
Thermodynamic properties
Activation energy
Temperature
Crystals
Lasers
Hot Temperature
gallium arsenide

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Garcia, R., Jaquez, E. J., Culbertson, R., D'Acosta, C., & Jasper, C. (1994). Ion implantation monitoring of GaAs using thermal waves. In A. F. Garito, A. K-Y. Jen, C. Y-C. Lee, & L. R. Dalton (Eds.), Materials Research Society Symposium Proceedings (Vol. 316, pp. 673-678). Pittsburgh, PA, United States: Publ by Materials Research Society.

Ion implantation monitoring of GaAs using thermal waves. / Garcia, R.; Jaquez, E. J.; Culbertson, Robert; D'Acosta, C.; Jasper, C.

Materials Research Society Symposium Proceedings. ed. / Anthony F. Garito; Alex K-Y. Jen; Charles Y-C. Lee; Larry R. Dalton. Vol. 316 Pittsburgh, PA, United States : Publ by Materials Research Society, 1994. p. 673-678.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Garcia, R, Jaquez, EJ, Culbertson, R, D'Acosta, C & Jasper, C 1994, Ion implantation monitoring of GaAs using thermal waves. in AF Garito, AK-Y Jen, CY-C Lee & LR Dalton (eds), Materials Research Society Symposium Proceedings. vol. 316, Publ by Materials Research Society, Pittsburgh, PA, United States, pp. 673-678, Proceedings of the MRS 1993 Fall Meeting, Boston, MA, USA, 11/29/93.
Garcia R, Jaquez EJ, Culbertson R, D'Acosta C, Jasper C. Ion implantation monitoring of GaAs using thermal waves. In Garito AF, Jen AK-Y, Lee CY-C, Dalton LR, editors, Materials Research Society Symposium Proceedings. Vol. 316. Pittsburgh, PA, United States: Publ by Materials Research Society. 1994. p. 673-678
Garcia, R. ; Jaquez, E. J. ; Culbertson, Robert ; D'Acosta, C. ; Jasper, C. / Ion implantation monitoring of GaAs using thermal waves. Materials Research Society Symposium Proceedings. editor / Anthony F. Garito ; Alex K-Y. Jen ; Charles Y-C. Lee ; Larry R. Dalton. Vol. 316 Pittsburgh, PA, United States : Publ by Materials Research Society, 1994. pp. 673-678
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