Investigation of Pb(Zr,Ti)O 3/GaN heterostructures by scanning probe microscopy

A. Gruverman, W. Cao, S. Bhaskar, Sandwip Dey

Research output: Contribution to journalArticle

29 Citations (Scopus)

Abstract

The application of piezoresponse force microscopy (PFM) technology to analyze the evolution of domain structure with varying Pb(Zr,Ti)O 3(PZT) thickness on GaN substrate, was investigated. Sol-gel PZT films with thickness 100, 200, and 300 nm were deposited on the GaN/Sapphire substrates. By analyzing the mechanical stress at the PZT/GaN interface, it was observed that the PZT films exhibit ferroelectric properties that vary as a function of the film thickness. The results show that the PFM technique is applicable for characterization of the electronic properties of the PZT/GaN heterostructures.

Original languageEnglish (US)
Pages (from-to)5153-5155
Number of pages3
JournalApplied Physics Letters
Volume84
Issue number25
DOIs
StatePublished - Jun 21 2004

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microscopy
scanning
probes
sapphire
film thickness
gels
electronics

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Investigation of Pb(Zr,Ti)O 3/GaN heterostructures by scanning probe microscopy. / Gruverman, A.; Cao, W.; Bhaskar, S.; Dey, Sandwip.

In: Applied Physics Letters, Vol. 84, No. 25, 21.06.2004, p. 5153-5155.

Research output: Contribution to journalArticle

Gruverman, A. ; Cao, W. ; Bhaskar, S. ; Dey, Sandwip. / Investigation of Pb(Zr,Ti)O 3/GaN heterostructures by scanning probe microscopy. In: Applied Physics Letters. 2004 ; Vol. 84, No. 25. pp. 5153-5155.
@article{852280ef2cb34b3da7164c3b12059855,
title = "Investigation of Pb(Zr,Ti)O 3/GaN heterostructures by scanning probe microscopy",
abstract = "The application of piezoresponse force microscopy (PFM) technology to analyze the evolution of domain structure with varying Pb(Zr,Ti)O 3(PZT) thickness on GaN substrate, was investigated. Sol-gel PZT films with thickness 100, 200, and 300 nm were deposited on the GaN/Sapphire substrates. By analyzing the mechanical stress at the PZT/GaN interface, it was observed that the PZT films exhibit ferroelectric properties that vary as a function of the film thickness. The results show that the PFM technique is applicable for characterization of the electronic properties of the PZT/GaN heterostructures.",
author = "A. Gruverman and W. Cao and S. Bhaskar and Sandwip Dey",
year = "2004",
month = "6",
day = "21",
doi = "10.1063/1.1765740",
language = "English (US)",
volume = "84",
pages = "5153--5155",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "25",

}

TY - JOUR

T1 - Investigation of Pb(Zr,Ti)O 3/GaN heterostructures by scanning probe microscopy

AU - Gruverman, A.

AU - Cao, W.

AU - Bhaskar, S.

AU - Dey, Sandwip

PY - 2004/6/21

Y1 - 2004/6/21

N2 - The application of piezoresponse force microscopy (PFM) technology to analyze the evolution of domain structure with varying Pb(Zr,Ti)O 3(PZT) thickness on GaN substrate, was investigated. Sol-gel PZT films with thickness 100, 200, and 300 nm were deposited on the GaN/Sapphire substrates. By analyzing the mechanical stress at the PZT/GaN interface, it was observed that the PZT films exhibit ferroelectric properties that vary as a function of the film thickness. The results show that the PFM technique is applicable for characterization of the electronic properties of the PZT/GaN heterostructures.

AB - The application of piezoresponse force microscopy (PFM) technology to analyze the evolution of domain structure with varying Pb(Zr,Ti)O 3(PZT) thickness on GaN substrate, was investigated. Sol-gel PZT films with thickness 100, 200, and 300 nm were deposited on the GaN/Sapphire substrates. By analyzing the mechanical stress at the PZT/GaN interface, it was observed that the PZT films exhibit ferroelectric properties that vary as a function of the film thickness. The results show that the PFM technique is applicable for characterization of the electronic properties of the PZT/GaN heterostructures.

UR - http://www.scopus.com/inward/record.url?scp=3142670469&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=3142670469&partnerID=8YFLogxK

U2 - 10.1063/1.1765740

DO - 10.1063/1.1765740

M3 - Article

AN - SCOPUS:3142670469

VL - 84

SP - 5153

EP - 5155

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 25

ER -