Investigation of Pb(Zr,Ti)O 3/GaN heterostructures by scanning probe microscopy

A. Gruverman; W. Cao; S. Bhaskar; Sandwip Dey

doi:10.1063/1.1765740

Investigation of Pb(Zr,Ti)O ₃/GaN heterostructures by scanning probe microscopy

A. Gruverman, W. Cao, S. Bhaskar, Sandwip Dey

Chemical Engineering

Research output: Contribution to journal › Article › peer-review

32 Scopus citations

Abstract

The application of piezoresponse force microscopy (PFM) technology to analyze the evolution of domain structure with varying Pb(Zr,Ti)O ₃(PZT) thickness on GaN substrate, was investigated. Sol-gel PZT films with thickness 100, 200, and 300 nm were deposited on the GaN/Sapphire substrates. By analyzing the mechanical stress at the PZT/GaN interface, it was observed that the PZT films exhibit ferroelectric properties that vary as a function of the film thickness. The results show that the PFM technique is applicable for characterization of the electronic properties of the PZT/GaN heterostructures.

Original language	English (US)
Pages (from-to)	5153-5155
Number of pages	3
Journal	Applied Physics Letters
Volume	84
Issue number	25
DOIs	https://doi.org/10.1063/1.1765740
State	Published - Jun 21 2004

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.1765740

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@article{852280ef2cb34b3da7164c3b12059855,

title = "Investigation of Pb(Zr,Ti)O 3/GaN heterostructures by scanning probe microscopy",

abstract = "The application of piezoresponse force microscopy (PFM) technology to analyze the evolution of domain structure with varying Pb(Zr,Ti)O 3(PZT) thickness on GaN substrate, was investigated. Sol-gel PZT films with thickness 100, 200, and 300 nm were deposited on the GaN/Sapphire substrates. By analyzing the mechanical stress at the PZT/GaN interface, it was observed that the PZT films exhibit ferroelectric properties that vary as a function of the film thickness. The results show that the PFM technique is applicable for characterization of the electronic properties of the PZT/GaN heterostructures.",

author = "A. Gruverman and W. Cao and S. Bhaskar and Sandwip Dey",

note = "Funding Information: The work at NCSU has been supported by the National Science Foundation (Grant No. DMR-0235632). Technical assistance of Dr. B. J. Rodriguez is greatly appreciated. S.K.D. gratefully acknowledges the support of a DARPA-sponsored consortium on RF nanoMEMS devices (Contract No. 1236318-004), and the provision of GaN ∕ sapphire wafers by M. A. Khan, G. Simin, and J. Yang of the University of South Carolina. ",

year = "2004",

month = jun,

day = "21",

doi = "10.1063/1.1765740",

language = "English (US)",

volume = "84",

pages = "5153--5155",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "25",

}

TY - JOUR

T1 - Investigation of Pb(Zr,Ti)O 3/GaN heterostructures by scanning probe microscopy

AU - Gruverman, A.

AU - Cao, W.

AU - Bhaskar, S.

AU - Dey, Sandwip

N1 - Funding Information: The work at NCSU has been supported by the National Science Foundation (Grant No. DMR-0235632). Technical assistance of Dr. B. J. Rodriguez is greatly appreciated. S.K.D. gratefully acknowledges the support of a DARPA-sponsored consortium on RF nanoMEMS devices (Contract No. 1236318-004), and the provision of GaN ∕ sapphire wafers by M. A. Khan, G. Simin, and J. Yang of the University of South Carolina.

PY - 2004/6/21

Y1 - 2004/6/21

N2 - The application of piezoresponse force microscopy (PFM) technology to analyze the evolution of domain structure with varying Pb(Zr,Ti)O 3(PZT) thickness on GaN substrate, was investigated. Sol-gel PZT films with thickness 100, 200, and 300 nm were deposited on the GaN/Sapphire substrates. By analyzing the mechanical stress at the PZT/GaN interface, it was observed that the PZT films exhibit ferroelectric properties that vary as a function of the film thickness. The results show that the PFM technique is applicable for characterization of the electronic properties of the PZT/GaN heterostructures.

AB - The application of piezoresponse force microscopy (PFM) technology to analyze the evolution of domain structure with varying Pb(Zr,Ti)O 3(PZT) thickness on GaN substrate, was investigated. Sol-gel PZT films with thickness 100, 200, and 300 nm were deposited on the GaN/Sapphire substrates. By analyzing the mechanical stress at the PZT/GaN interface, it was observed that the PZT films exhibit ferroelectric properties that vary as a function of the film thickness. The results show that the PFM technique is applicable for characterization of the electronic properties of the PZT/GaN heterostructures.

UR - http://www.scopus.com/inward/record.url?scp=3142670469&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=3142670469&partnerID=8YFLogxK

U2 - 10.1063/1.1765740

DO - 10.1063/1.1765740

M3 - Article

AN - SCOPUS:3142670469

SN - 0003-6951

VL - 84

SP - 5153

EP - 5155

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 25

ER -

Investigation of Pb(Zr,Ti)O ₃/GaN heterostructures by scanning probe microscopy

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