Investigation of Pb(Zr,Ti)O 3/GaN heterostructures by scanning probe microscopy

A. Gruverman, W. Cao, S. Bhaskar, Sandwip Dey

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Abstract

The application of piezoresponse force microscopy (PFM) technology to analyze the evolution of domain structure with varying Pb(Zr,Ti)O 3(PZT) thickness on GaN substrate, was investigated. Sol-gel PZT films with thickness 100, 200, and 300 nm were deposited on the GaN/Sapphire substrates. By analyzing the mechanical stress at the PZT/GaN interface, it was observed that the PZT films exhibit ferroelectric properties that vary as a function of the film thickness. The results show that the PFM technique is applicable for characterization of the electronic properties of the PZT/GaN heterostructures.

Original languageEnglish (US)
Pages (from-to)5153-5155
Number of pages3
JournalApplied Physics Letters
Volume84
Issue number25
DOIs
StatePublished - Jun 21 2004

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ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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