The application of piezoresponse force microscopy (PFM) technology to analyze the evolution of domain structure with varying Pb(Zr,Ti)O 3(PZT) thickness on GaN substrate, was investigated. Sol-gel PZT films with thickness 100, 200, and 300 nm were deposited on the GaN/Sapphire substrates. By analyzing the mechanical stress at the PZT/GaN interface, it was observed that the PZT films exhibit ferroelectric properties that vary as a function of the film thickness. The results show that the PFM technique is applicable for characterization of the electronic properties of the PZT/GaN heterostructures.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)