Investigation of GaN-on-GaN vertical p-n diode with regrown p-GaN by metalorganic chemical vapor deposition

Kai Fu, Houqiang Fu, Hanxiao Liu, Shanthan Reddy Alugubelli, Tsung Han Yang, Xuanqi Huang, Hong Chen, Izak Baranowski, Jossue Montes, Fernando Ponce, Yuji Zhao

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

To mimic selective-area doping, p-GaN was regrown on an etched GaN surface on GaN substrates by metalorganic chemical vapor deposition. Vertical GaN-on-GaN p-n diodes were fabricated to investigate the effects of the etch-then-regrowth process on device performance. The crystal quality of the sample after each epitaxial step was characterized by X-ray diffraction, where the etch-then-regrowth process led to a very slight increase in edge dislocations. A regrowth interfacial layer was clearly shown by transmission electron microscopy. Strong electroluminescence was observed with three emission peaks at 2.2 eV, 2.8 eV, and 3.0 eV. The forward current density increased slightly with increasing temperature, while the reverse current density was almost temperature independent indicating tunneling as the reverse transport mechanism. This result is very similar to the reported Zener tunnel diode comprising a high doping profile at the junction interface. High levels of silicon and oxygen concentrations were observed at the regrowth interface with a distribution width of ∼100 nm. This work provides valuable information on p-GaN regrowth and regrown GaN p-n diodes, which can serve as an important reference for developing selective doping for advanced GaN power electronics for high voltage and high power applications.

Original languageEnglish (US)
Article number233502
JournalApplied Physics Letters
Volume113
Issue number23
DOIs
StatePublished - Dec 3 2018

Fingerprint

metalorganic chemical vapor deposition
diodes
current density
tunnel diodes
avalanche diodes
edge dislocations
electroluminescence
high voltages
transmission electron microscopy
temperature
silicon
oxygen
profiles
electronics
diffraction
crystals
x rays

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Investigation of GaN-on-GaN vertical p-n diode with regrown p-GaN by metalorganic chemical vapor deposition. / Fu, Kai; Fu, Houqiang; Liu, Hanxiao; Alugubelli, Shanthan Reddy; Yang, Tsung Han; Huang, Xuanqi; Chen, Hong; Baranowski, Izak; Montes, Jossue; Ponce, Fernando; Zhao, Yuji.

In: Applied Physics Letters, Vol. 113, No. 23, 233502, 03.12.2018.

Research output: Contribution to journalArticle

Fu, K, Fu, H, Liu, H, Alugubelli, SR, Yang, TH, Huang, X, Chen, H, Baranowski, I, Montes, J, Ponce, F & Zhao, Y 2018, 'Investigation of GaN-on-GaN vertical p-n diode with regrown p-GaN by metalorganic chemical vapor deposition', Applied Physics Letters, vol. 113, no. 23, 233502. https://doi.org/10.1063/1.5052479
Fu, Kai ; Fu, Houqiang ; Liu, Hanxiao ; Alugubelli, Shanthan Reddy ; Yang, Tsung Han ; Huang, Xuanqi ; Chen, Hong ; Baranowski, Izak ; Montes, Jossue ; Ponce, Fernando ; Zhao, Yuji. / Investigation of GaN-on-GaN vertical p-n diode with regrown p-GaN by metalorganic chemical vapor deposition. In: Applied Physics Letters. 2018 ; Vol. 113, No. 23.
@article{00bd896eda084765b629e5e3201ebf6e,
title = "Investigation of GaN-on-GaN vertical p-n diode with regrown p-GaN by metalorganic chemical vapor deposition",
abstract = "To mimic selective-area doping, p-GaN was regrown on an etched GaN surface on GaN substrates by metalorganic chemical vapor deposition. Vertical GaN-on-GaN p-n diodes were fabricated to investigate the effects of the etch-then-regrowth process on device performance. The crystal quality of the sample after each epitaxial step was characterized by X-ray diffraction, where the etch-then-regrowth process led to a very slight increase in edge dislocations. A regrowth interfacial layer was clearly shown by transmission electron microscopy. Strong electroluminescence was observed with three emission peaks at 2.2 eV, 2.8 eV, and 3.0 eV. The forward current density increased slightly with increasing temperature, while the reverse current density was almost temperature independent indicating tunneling as the reverse transport mechanism. This result is very similar to the reported Zener tunnel diode comprising a high doping profile at the junction interface. High levels of silicon and oxygen concentrations were observed at the regrowth interface with a distribution width of ∼100 nm. This work provides valuable information on p-GaN regrowth and regrown GaN p-n diodes, which can serve as an important reference for developing selective doping for advanced GaN power electronics for high voltage and high power applications.",
author = "Kai Fu and Houqiang Fu and Hanxiao Liu and Alugubelli, {Shanthan Reddy} and Yang, {Tsung Han} and Xuanqi Huang and Hong Chen and Izak Baranowski and Jossue Montes and Fernando Ponce and Yuji Zhao",
year = "2018",
month = "12",
day = "3",
doi = "10.1063/1.5052479",
language = "English (US)",
volume = "113",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "23",

}

TY - JOUR

T1 - Investigation of GaN-on-GaN vertical p-n diode with regrown p-GaN by metalorganic chemical vapor deposition

AU - Fu, Kai

AU - Fu, Houqiang

AU - Liu, Hanxiao

AU - Alugubelli, Shanthan Reddy

AU - Yang, Tsung Han

AU - Huang, Xuanqi

AU - Chen, Hong

AU - Baranowski, Izak

AU - Montes, Jossue

AU - Ponce, Fernando

AU - Zhao, Yuji

PY - 2018/12/3

Y1 - 2018/12/3

N2 - To mimic selective-area doping, p-GaN was regrown on an etched GaN surface on GaN substrates by metalorganic chemical vapor deposition. Vertical GaN-on-GaN p-n diodes were fabricated to investigate the effects of the etch-then-regrowth process on device performance. The crystal quality of the sample after each epitaxial step was characterized by X-ray diffraction, where the etch-then-regrowth process led to a very slight increase in edge dislocations. A regrowth interfacial layer was clearly shown by transmission electron microscopy. Strong electroluminescence was observed with three emission peaks at 2.2 eV, 2.8 eV, and 3.0 eV. The forward current density increased slightly with increasing temperature, while the reverse current density was almost temperature independent indicating tunneling as the reverse transport mechanism. This result is very similar to the reported Zener tunnel diode comprising a high doping profile at the junction interface. High levels of silicon and oxygen concentrations were observed at the regrowth interface with a distribution width of ∼100 nm. This work provides valuable information on p-GaN regrowth and regrown GaN p-n diodes, which can serve as an important reference for developing selective doping for advanced GaN power electronics for high voltage and high power applications.

AB - To mimic selective-area doping, p-GaN was regrown on an etched GaN surface on GaN substrates by metalorganic chemical vapor deposition. Vertical GaN-on-GaN p-n diodes were fabricated to investigate the effects of the etch-then-regrowth process on device performance. The crystal quality of the sample after each epitaxial step was characterized by X-ray diffraction, where the etch-then-regrowth process led to a very slight increase in edge dislocations. A regrowth interfacial layer was clearly shown by transmission electron microscopy. Strong electroluminescence was observed with three emission peaks at 2.2 eV, 2.8 eV, and 3.0 eV. The forward current density increased slightly with increasing temperature, while the reverse current density was almost temperature independent indicating tunneling as the reverse transport mechanism. This result is very similar to the reported Zener tunnel diode comprising a high doping profile at the junction interface. High levels of silicon and oxygen concentrations were observed at the regrowth interface with a distribution width of ∼100 nm. This work provides valuable information on p-GaN regrowth and regrown GaN p-n diodes, which can serve as an important reference for developing selective doping for advanced GaN power electronics for high voltage and high power applications.

UR - http://www.scopus.com/inward/record.url?scp=85057750041&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85057750041&partnerID=8YFLogxK

U2 - 10.1063/1.5052479

DO - 10.1063/1.5052479

M3 - Article

VL - 113

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 23

M1 - 233502

ER -