Intrinsic variability and reliability in nano-CMOS

Jyothi Velamala, Chi Chao Wang, Rui Zheng, Yun Ye, Yu Cao

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations

Abstract

Random variations have been regarded as one of the major barriers of CMOS technology scaling. Besides profound physical effects that result from the vastly increased parameter variations due to manufacturing, performance is also affected with temporal conditions due to reliability degradation. Compact models that physically capture diese effects are crucial to bridge variability and reliability effects with design solutions. By understanding the underlying physics and analyzing the results from atomistic simulations, intrinsic variations from random dopant fluctuation (RDF), line-edge roughness (LER), and oxide thickness fluctuation (OTF) are presented in mis paper. Temporal parameter shift from aging mechanisms like negative bias temperature instability (NBTI) effect along with their models are also discussed. The statistical interaction of aging effects with static variability is further discussed. Finally, circuit performance variability impacted by random threshold voltage variation is benchmarked.

Original languageEnglish (US)
Title of host publicationSilicon Nitride, Silicon Dioxide, and Emerging Dielectrics 11
Pages353-367
Number of pages15
Edition4
DOIs
StatePublished - Aug 2 2011
EventSilicon Nitride, Silicon Dioxide, and Emerging Dielectrics 11 - 219th ECS Meeting - Montreal, QC, Canada
Duration: May 1 2011May 6 2011

Publication series

NameECS Transactions
Number4
Volume35
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

OtherSilicon Nitride, Silicon Dioxide, and Emerging Dielectrics 11 - 219th ECS Meeting
CountryCanada
CityMontreal, QC
Period5/1/115/6/11

ASJC Scopus subject areas

  • Engineering(all)

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  • Cite this

    Velamala, J., Wang, C. C., Zheng, R., Ye, Y., & Cao, Y. (2011). Intrinsic variability and reliability in nano-CMOS. In Silicon Nitride, Silicon Dioxide, and Emerging Dielectrics 11 (4 ed., pp. 353-367). (ECS Transactions; Vol. 35, No. 4). https://doi.org/10.1149/1.3572293