The performance of MOSFET devices with stacked gate dielectrics was examined. Ultrathin plasma-oxidized Si-SiO2 layers were integrated into devices with SiN, SiON, and Ta2O5 alternative dielectrics. The mechanical bonding strain was studied by combining bond counting on the atomic level with theoretical considerations for network constraints.
|Original language||English (US)|
|Number of pages||7|
|Journal||Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures|
|State||Published - May 1 2000|
ASJC Scopus subject areas
- Condensed Matter Physics
- Electrical and Electronic Engineering