Intrinsic limitations on device performance and reliability from bond-constraint induced transition regions at interfaces of stacked dielectrics

G. Lucovsky; H. Yang; H. Niimi; J. W. Keister; J. E. Rowe; M. F. Thorpe; J. C. Phillips

doi:10.1116/1.591464

Intrinsic limitations on device performance and reliability from bond-constraint induced transition regions at interfaces of stacked dielectrics

G. Lucovsky, H. Yang, H. Niimi, J. W. Keister, J. E. Rowe, M. F. Thorpe, J. C. Phillips

Research output: Contribution to journal › Article › peer-review

26 Scopus citations

Abstract

The performance of MOSFET devices with stacked gate dielectrics was examined. Ultrathin plasma-oxidized Si-SiO₂ layers were integrated into devices with SiN, SiON, and Ta₂O₅ alternative dielectrics. The mechanical bonding strain was studied by combining bond counting on the atomic level with theoretical considerations for network constraints.

Original language	English (US)
Pages (from-to)	1742-1748
Number of pages	7
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	18
Issue number	3
DOIs	https://doi.org/10.1116/1.591464
State	Published - May 2000
Externally published	Yes

ASJC Scopus subject areas

Condensed Matter Physics
Electrical and Electronic Engineering

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10.1116/1.591464

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Lucovsky, G., Yang, H., Niimi, H., Keister, J. W., Rowe, J. E., Thorpe, M. F., & Phillips, J. C. (2000). Intrinsic limitations on device performance and reliability from bond-constraint induced transition regions at interfaces of stacked dielectrics. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 18(3), 1742-1748. https://doi.org/10.1116/1.591464

Intrinsic limitations on device performance and reliability from bond-constraint induced transition regions at interfaces of stacked dielectrics. / Lucovsky, G.; Yang, H.; Niimi, H. et al.
In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 18, No. 3, 05.2000, p. 1742-1748.

Research output: Contribution to journal › Article › peer-review

Lucovsky, G, Yang, H, Niimi, H, Keister, JW, Rowe, JE, Thorpe, MF & Phillips, JC 2000, 'Intrinsic limitations on device performance and reliability from bond-constraint induced transition regions at interfaces of stacked dielectrics', Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, vol. 18, no. 3, pp. 1742-1748. https://doi.org/10.1116/1.591464

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Intrinsic limitations on device performance and reliability from bond-constraint induced transition regions at interfaces of stacked dielectrics

Abstract

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