Intersubband relaxation of hot excitons in GaAs quantum wells

Y. Segawa, T. Yasui, Y. Limura, R. Rodrigues, R. A. Hopfel, Y. Aoyagi, Stephen Goodnick

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

We have experimentally studied the time evolution of the exciton population in a higher subband of GaAs quantum wells, below the free-carrier continuum. The lifetime of the exciton formed by an electron of the lowest subband and a heavy hole of the second subband in GaAs quantum wells is determined by time-resolved luminescence as 130±20 ps. This result is consistent with theoretical estimations of intersubband scattering by acoustic phonon emission. We discuss subband transitions of excitons in quantum wells as a new appealing concept for optically pumped coherent sources in the meV range.

Original languageEnglish (US)
Pages (from-to)733-735
Number of pages3
JournalSemiconductor Science and Technology
Volume9
Issue number5 SUPPL
StatePublished - May 1994
Externally publishedYes

Fingerprint

Excitons
Semiconductor quantum wells
excitons
quantum wells
coherent sources
Electron transitions
Luminescence
Acoustics
Scattering
luminescence
continuums
life (durability)
acoustics
Electrons
scattering
LDS 751
gallium arsenide
electrons

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics
  • Materials Science(all)
  • Electronic, Optical and Magnetic Materials

Cite this

Segawa, Y., Yasui, T., Limura, Y., Rodrigues, R., Hopfel, R. A., Aoyagi, Y., & Goodnick, S. (1994). Intersubband relaxation of hot excitons in GaAs quantum wells. Semiconductor Science and Technology, 9(5 SUPPL), 733-735.

Intersubband relaxation of hot excitons in GaAs quantum wells. / Segawa, Y.; Yasui, T.; Limura, Y.; Rodrigues, R.; Hopfel, R. A.; Aoyagi, Y.; Goodnick, Stephen.

In: Semiconductor Science and Technology, Vol. 9, No. 5 SUPPL, 05.1994, p. 733-735.

Research output: Contribution to journalArticle

Segawa, Y, Yasui, T, Limura, Y, Rodrigues, R, Hopfel, RA, Aoyagi, Y & Goodnick, S 1994, 'Intersubband relaxation of hot excitons in GaAs quantum wells', Semiconductor Science and Technology, vol. 9, no. 5 SUPPL, pp. 733-735.
Segawa Y, Yasui T, Limura Y, Rodrigues R, Hopfel RA, Aoyagi Y et al. Intersubband relaxation of hot excitons in GaAs quantum wells. Semiconductor Science and Technology. 1994 May;9(5 SUPPL):733-735.
Segawa, Y. ; Yasui, T. ; Limura, Y. ; Rodrigues, R. ; Hopfel, R. A. ; Aoyagi, Y. ; Goodnick, Stephen. / Intersubband relaxation of hot excitons in GaAs quantum wells. In: Semiconductor Science and Technology. 1994 ; Vol. 9, No. 5 SUPPL. pp. 733-735.
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