Intersubband relaxation of hot excitons in GaAs quantum wells

R. A. Hopfel, R. Rodrigues, Y. Limura, T. Yasui, Y. Segawa, Y. Aoyagi, S. M. Goodnick

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Abstract

We have experimentally studied the time evolution of the exciton population in a higher subband of GaAs quantum wells, below the free-carrier continuum. The lifetime of the exciton formed by an electron of the lowest subband and a heavy hole of the second subband in GaAs quantum wells is determined by time-resolved luminescence as 130+or-20 ps. This result is consistent with theoretical estimations of intersubband scattering by acoustic phonon emission. We discuss subband transitions of excitons in quantum wells as a new appealing concept for optically pumped coherent sources in the meV range.

Original languageEnglish (US)
Article number090
Pages (from-to)733-735
Number of pages3
JournalSemiconductor Science and Technology
Volume9
Issue number5 S
DOIs
StatePublished - Dec 1 1994

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ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

Hopfel, R. A., Rodrigues, R., Limura, Y., Yasui, T., Segawa, Y., Aoyagi, Y., & Goodnick, S. M. (1994). Intersubband relaxation of hot excitons in GaAs quantum wells. Semiconductor Science and Technology, 9(5 S), 733-735. [090]. https://doi.org/10.1088/0268-1242/9/5S/090