Intersubband relaxation of hot excitons in GaAs quantum wells

R. A. Hopfel; R. Rodrigues; Y. Limura; T. Yasui; Y. Segawa; Y. Aoyagi; S. M. Goodnick

doi:10.1088/0268-1242/9/5S/090

Intersubband relaxation of hot excitons in GaAs quantum wells

R. A. Hopfel, R. Rodrigues, Y. Limura, T. Yasui, Y. Segawa, Y. Aoyagi, S. M. Goodnick

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

We have experimentally studied the time evolution of the exciton population in a higher subband of GaAs quantum wells, below the free-carrier continuum. The lifetime of the exciton formed by an electron of the lowest subband and a heavy hole of the second subband in GaAs quantum wells is determined by time-resolved luminescence as 130+or-20 ps. This result is consistent with theoretical estimations of intersubband scattering by acoustic phonon emission. We discuss subband transitions of excitons in quantum wells as a new appealing concept for optically pumped coherent sources in the meV range.

Original language	English (US)
Article number	090
Pages (from-to)	733-735
Number of pages	3
Journal	Semiconductor Science and Technology
Volume	9
Issue number	5 S
DOIs	https://doi.org/10.1088/0268-1242/9/5S/090
State	Published - 1994
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1088/0268-1242/9/5S/090

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@article{078c3be6b44b4bf8a4a1d120421fa875,

title = "Intersubband relaxation of hot excitons in GaAs quantum wells",

abstract = "We have experimentally studied the time evolution of the exciton population in a higher subband of GaAs quantum wells, below the free-carrier continuum. The lifetime of the exciton formed by an electron of the lowest subband and a heavy hole of the second subband in GaAs quantum wells is determined by time-resolved luminescence as 130+or-20 ps. This result is consistent with theoretical estimations of intersubband scattering by acoustic phonon emission. We discuss subband transitions of excitons in quantum wells as a new appealing concept for optically pumped coherent sources in the meV range.",

author = "Hopfel, {R. A.} and R. Rodrigues and Y. Limura and T. Yasui and Y. Segawa and Y. Aoyagi and Goodnick, {S. M.}",

year = "1994",

doi = "10.1088/0268-1242/9/5S/090",

language = "English (US)",

volume = "9",

pages = "733--735",

journal = "Semiconductor Science and Technology",

issn = "0268-1242",

publisher = "IOP Publishing Ltd.",

number = "5 S",

}

TY - JOUR

T1 - Intersubband relaxation of hot excitons in GaAs quantum wells

AU - Hopfel, R. A.

AU - Rodrigues, R.

AU - Limura, Y.

AU - Yasui, T.

AU - Segawa, Y.

AU - Aoyagi, Y.

AU - Goodnick, S. M.

PY - 1994

Y1 - 1994

N2 - We have experimentally studied the time evolution of the exciton population in a higher subband of GaAs quantum wells, below the free-carrier continuum. The lifetime of the exciton formed by an electron of the lowest subband and a heavy hole of the second subband in GaAs quantum wells is determined by time-resolved luminescence as 130+or-20 ps. This result is consistent with theoretical estimations of intersubband scattering by acoustic phonon emission. We discuss subband transitions of excitons in quantum wells as a new appealing concept for optically pumped coherent sources in the meV range.

AB - We have experimentally studied the time evolution of the exciton population in a higher subband of GaAs quantum wells, below the free-carrier continuum. The lifetime of the exciton formed by an electron of the lowest subband and a heavy hole of the second subband in GaAs quantum wells is determined by time-resolved luminescence as 130+or-20 ps. This result is consistent with theoretical estimations of intersubband scattering by acoustic phonon emission. We discuss subband transitions of excitons in quantum wells as a new appealing concept for optically pumped coherent sources in the meV range.

UR - http://www.scopus.com/inward/record.url?scp=0028425162&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0028425162&partnerID=8YFLogxK

U2 - 10.1088/0268-1242/9/5S/090

DO - 10.1088/0268-1242/9/5S/090

M3 - Article

AN - SCOPUS:0028425162

SN - 0268-1242

VL - 9

SP - 733

EP - 735

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

IS - 5 S

M1 - 090

ER -

Intersubband relaxation of hot excitons in GaAs quantum wells

Abstract

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