Internally shunted sputtered NbN Josephson junctions with a TaNx barrier for nonlatching logic applications

Anupama B. Kaul; Stephen R. Whiteley; Theodore Van Duzer; Lei Yu; Nathan Newman; John M. Rowell

doi:10.1063/1.1337630

Internally shunted sputtered NbN Josephson junctions with a TaNx barrier for nonlatching logic applications

Anupama B. Kaul, Stephen R. Whiteley, Theodore Van Duzer, Lei Yu, Nathan Newman, John M. Rowell

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Abstract

We report on the growth, fabrication, and device characterization of NbN internally shunted Josephson junctions with a TaNx barrier. The resistivity of TaNx films could be varied from a few hundred micro-ohms to a few hundred milliohms by increasing the N₂ pressure during reactive sputtering. The temperature dependence of I_cR_n of the junctions with ∼ 13 mΩ cm barrier resistivity was measured for various barrier thicknesses. The coherence length of the barrier was determined to be 5 nm. By adjusting the barrier thickness, I_cR_n values >500 μV were observed up to 8.3 K, with I_c and R_n of magnitudes that are suitable for single-flux-quantum digital circuits.

Original language	English (US)
Pages (from-to)	99-101
Number of pages	3
Journal	Applied Physics Letters
Volume	78
Issue number	1
DOIs	https://doi.org/10.1063/1.1337630
State	Published - Jan 1 2001

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Internally shunted sputtered NbN Josephson junctions with a TaNx barrier for nonlatching logic applications",

abstract = "We report on the growth, fabrication, and device characterization of NbN internally shunted Josephson junctions with a TaNx barrier. The resistivity of TaNx films could be varied from a few hundred micro-ohms to a few hundred milliohms by increasing the N2 pressure during reactive sputtering. The temperature dependence of IcRn of the junctions with ∼ 13 mΩ cm barrier resistivity was measured for various barrier thicknesses. The coherence length of the barrier was determined to be 5 nm. By adjusting the barrier thickness, IcRn values >500 μV were observed up to 8.3 K, with Ic and Rn of magnitudes that are suitable for single-flux-quantum digital circuits.",

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AU - Kaul, Anupama B.

AU - Whiteley, Stephen R.

AU - Van Duzer, Theodore

AU - Yu, Lei

AU - Newman, Nathan

AU - Rowell, John M.

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N2 - We report on the growth, fabrication, and device characterization of NbN internally shunted Josephson junctions with a TaNx barrier. The resistivity of TaNx films could be varied from a few hundred micro-ohms to a few hundred milliohms by increasing the N2 pressure during reactive sputtering. The temperature dependence of IcRn of the junctions with ∼ 13 mΩ cm barrier resistivity was measured for various barrier thicknesses. The coherence length of the barrier was determined to be 5 nm. By adjusting the barrier thickness, IcRn values >500 μV were observed up to 8.3 K, with Ic and Rn of magnitudes that are suitable for single-flux-quantum digital circuits.

AB - We report on the growth, fabrication, and device characterization of NbN internally shunted Josephson junctions with a TaNx barrier. The resistivity of TaNx films could be varied from a few hundred micro-ohms to a few hundred milliohms by increasing the N2 pressure during reactive sputtering. The temperature dependence of IcRn of the junctions with ∼ 13 mΩ cm barrier resistivity was measured for various barrier thicknesses. The coherence length of the barrier was determined to be 5 nm. By adjusting the barrier thickness, IcRn values >500 μV were observed up to 8.3 K, with Ic and Rn of magnitudes that are suitable for single-flux-quantum digital circuits.

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Internally shunted sputtered NbN Josephson junctions with a TaNx barrier for nonlatching logic applications

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