Internally shunted sputtered NbN Josephson junctions with a TaNx barrier for nonlatching logic applications

Anupama B. Kaul, Stephen R. Whiteley, Theodore Van Duzer, Lei Yu, Nathan Newman, John M. Rowell

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Abstract

We report on the growth, fabrication, and device characterization of NbN internally shunted Josephson junctions with a TaNx barrier. The resistivity of TaNx films could be varied from a few hundred micro-ohms to a few hundred milliohms by increasing the N2 pressure during reactive sputtering. The temperature dependence of IcRn of the junctions with ∼ 13 mΩ cm barrier resistivity was measured for various barrier thicknesses. The coherence length of the barrier was determined to be 5 nm. By adjusting the barrier thickness, IcRn values >500 μV were observed up to 8.3 K, with Ic and Rn of magnitudes that are suitable for single-flux-quantum digital circuits.

Original languageEnglish (US)
Pages (from-to)99-101
Number of pages3
JournalApplied Physics Letters
Volume78
Issue number1
DOIs
StatePublished - Jan 1 2001

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ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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