Abstract

We present a new, approximate technique for estimating the polarization energy of point defects near interfaces in layered systems using semiconductor device simulation combined with a finite element quadrature technique. We show that we recapture the original, spherical Jost approximation in a homogeneous, infinite solid, as well as reproducing the exact result for a point charge near the interface of two dielectrics. We apply this technique to the silicon-silicon dioxide system for doped substrates, and for devices under bias. We show that the correction to calculated, bulk defect levels depends mildly on the distance from the interface. It depends more strongly on the substrate doping density. Finally, there is a significant dependence on gate bias. These results must be considered for proposed models for negative bias temperature instability (NBTI) that invoke tunneling from the silicon band edges into localized oxide traps.

Original languageEnglish (US)
Article number6678298
Pages (from-to)4109-4115
Number of pages7
JournalIEEE Transactions on Nuclear Science
Volume60
Issue number6
DOIs
StatePublished - Dec 2013

Keywords

  • Electronic Structure
  • radiation-induced point defects

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Nuclear Energy and Engineering
  • Electrical and Electronic Engineering

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